FDP8441 N-Channel MOSFET 40V 80A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP8441 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with continuous drain current of 23A at Ta and 80A at Tc. The device is housed in a TO-220-3 through-hole package and delivers 300W maximum power dissipation. This part operates across the temperature range of -55°C to 175°C and is compliant with RoHS3 and REACH standards.

The FDP8441 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET specification.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current @ Tc	80	A
Continuous Drain Current @ Ta	23	A
On-State Resistance (Rds On) @ 80A, 10V	2.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	280	nC
Input Capacitance (Ciss) @ 25V	15000	pF
Maximum Power Dissipation @ Tc	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FDP8441 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 40V minimum
Continuous Drain Current @ Tc: 80A or greater
Package Type: TO-220-3 or compatible TO-220 variant
Mounting Type: Through Hole
Operating Temperature Range: -55°C to 175°C minimum
Gate Drive Voltage: 10V nominal

Secondary Compatibility Parameters:

On-State Resistance (Rds On): 2.7 mOhm or lower at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): 4V or lower
Maximum Power Dissipation: 300W or greater

Substitute parts are grouped into two categories:

Parametric Equivalents: Parts with identical or superior electrical specifications and matching package designation, suitable for direct replacement without circuit modification.

Similar Parts: Parts meeting the core voltage, current, and package requirements but with variations in secondary parameters such as gate charge, input capacitance, or on-state resistance. These parts require verification of application-specific performance characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 20-25V (pF)	Pd Max (W)	Package	Status
FDP8441	onsemi	40	80	2.7	4	280	15000	300	TO-220-3	Obsolete
FDP8441	Fairchild Semiconductor	40	80	2.7	4	280	15000	300	TO-220-3	Active
CSD18502KCS	Texas Instruments	40	100	2.9	2.1	62	4680	259	TO-220-3	Active
IPP023N04NGXKSA1	Infineon Technologies	40	90	2.3	4	120	10000	167	TO-220-3	Active
IPP041N04NGXKSA1	Infineon Technologies	40	80	4.1	4	56	4500	94	TO-220-3	Active
IRF2204PBF	Infineon Technologies	40	210	3.6	4	200	5890	330	TO-220-3	Active
IRF2804PBF	Infineon Technologies	40	75	2.3	4	240	6450	300	TO-220-3	Active
IRL1404ZPBF	Infineon Technologies	40	75	3.1	2.7	110	5080	230	TO-220-3	Active
PSMN2R2-40PS,127	Nexperia USA Inc.	40	100	2.1	4	130	8423	306	TO-220-3	Obsolete
AOT240L	Alpha & Omega Semiconductor Inc.	40	105	2.9	2.2	72	4300	176	TO-220-3	Not For New Designs
IPP039N04LGXKSA1	Infineon Technologies	40	80	3.9	2	78	6100	94	TO-220-3	Not For New Designs

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The FDP8441 manufactured by Fairchild Semiconductor is a parametric equivalent with identical electrical specifications and package designation. This part is classified as Active and is suitable for direct substitution in existing designs. Both onsemi and Fairchild versions comply with RoHS3 and REACH standards.

Active Substitute Parts for New Designs:

The following parts are classified as Active and meet or exceed the core electrical requirements of the FDP8441:

CSD18502KCS (Texas Instruments NexFET™): Exceeds drain current specification (100A vs. 80A) with lower gate charge (62 nC vs. 280 nC) and reduced input capacitance (4680 pF vs. 15000 pF). Suitable for applications requiring improved switching performance and reduced gate drive requirements.
IPP023N04NGXKSA1 (Infineon OptiMOS™): Meets drain current specification (90A) with superior on-state resistance (2.3 mOhm vs. 2.7 mOhm) and lower gate charge (120 nC vs. 280 nC). Recommended for power-sensitive applications.
IRF2204PBF (Infineon HEXFET®): Significantly exceeds drain current specification (210A) with matching gate threshold voltage and power dissipation rating (330W). Suitable for applications requiring higher current capacity.
IRF2804PBF (Infineon HEXFET®): Meets drain current specification (75A) with superior on-state resistance (2.3 mOhm vs. 2.7 mOhm) and matching power dissipation (300W). Suitable for direct replacement with improved efficiency.

Obsolete or Not For New Designs:

The following parts are not recommended for new designs:

PSMN2R2-40PS,127 (Nexperia): Classified as Obsolete. Exceeds current specification (100A) but not suitable for new production.
AOT240L (Alpha & Omega Semiconductor): Classified as Not For New Designs. Exceeds current specification (105A) but design status restricts use in new applications.
IPP039N04LGXKSA1 (Infineon): Classified as Not For New Designs. Meets current specification (80A) but design status restricts use in new applications.

Compliance and Certification:

All recommended substitute parts comply with RoHS3 and REACH standards. All parts operate within the -55°C to 175°C temperature range. Package variants (TO-220-3, TO-220AB, PG-TO220-3) are mechanically compatible with standard TO-220 mounting footprints.

Frequently Asked Questions (FAQ)

Q: Can the FDP8441 be replaced with any 40V MOSFET in a TO-220 package?

A: No. Substitution requires matching of critical electrical parameters: minimum 80A continuous drain current at Tc, on-state resistance of 2.7 mOhm or lower at 10V gate drive, and gate threshold voltage of 4V or lower. Package compatibility alone is insufficient for functional equivalence.

Q: What is the difference between the onsemi FDP8441 and the Fairchild FDP8441?

A: Both parts are parametrically identical with matching electrical specifications and package designation. The primary difference is manufacturer and product status: onsemi FDP8441 is Obsolete, while Fairchild FDP8441 is Active. The Fairchild version is suitable for direct replacement.

Q: Why does the CSD18502KCS have lower gate charge than the FDP8441?

A: Gate charge is a device-specific parameter determined by internal transistor geometry and manufacturing process. The CSD18502KCS (62 nC) exhibits lower gate charge than the FDP8441 (280 nC) due to differences in die design and process technology. Lower gate charge reduces gate drive power requirements and improves switching speed.

Q: Is the IRF2204PBF a suitable replacement if my application only requires 80A?

A: Yes. The IRF2204PBF exceeds the 80A requirement with a 210A rating and maintains matching gate threshold voltage (4V) and power dissipation capability (330W). Higher current rating does not degrade performance in lower-current applications. Verify that the TO-220AB package variant is compatible with your PCB footprint.

Q: What is the significance of the TO-220-3 versus TO-220AB package designation?

A: Both designations refer to three-terminal through-hole packages with identical pin spacing and mounting requirements. TO-220-3 and TO-220AB are mechanically interchangeable. The designation difference reflects manufacturer nomenclature conventions and does not affect electrical performance or mechanical compatibility.

Q: Can I use the IPP041N04NGXKSA1 as a replacement if on-state resistance is not critical?

A: The IPP041N04NGXKSA1 meets the 80A current requirement and voltage specification but exhibits higher on-state resistance (4.1 mOhm vs. 2.7 mOhm). This results in increased power dissipation and heat generation. Use is acceptable only if thermal design accommodates the additional dissipation and application performance tolerances permit the higher resistance.

Q: Why are some substitute parts classified as "Not For New Designs"?

A: Parts classified as "Not For New Designs" are in the mature or declining phase of their product lifecycle. Manufacturers recommend these parts only for sustaining production of existing designs. New product development should utilize parts with Active status to ensure long-term supply availability and manufacturer support.

Q: What is the impact of lower input capacitance in substitute parts?

A: Input capacitance (Ciss) affects gate drive circuit requirements and switching speed. Lower input capacitance (e.g., 4680 pF in CSD18502KCS vs. 15000 pF in FDP8441) reduces gate charge energy requirements and enables faster switching transitions. This improves efficiency in high-frequency switching applications but requires verification that existing gate drive circuits can accommodate the reduced capacitive load.

Q: Are all substitute parts RoHS3 and REACH compliant?

A: Yes. All substitute parts listed in this reference comply with RoHS3 and REACH standards. Compliance status is verified for each part and is suitable for applications requiring regulatory adherence.

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