FDP80N06 N-Channel MOSFET 60V 80A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP80N06 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 80A continuous drain current at 25°C. This device features a TO-220-3 through-hole package and is part of the UniFET™ series. The FDP80N06 is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the 60V voltage class, deliver comparable current handling capability, and utilize the same TO-220-3 package footprint.

Substiute Parts

FDP80N06
onsemiIn Stock: 10037FDP80N06 Datasheet
FDP80N06
Current Part
FQP50N06L-EPKE0003
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Key Parameters

Parameter FDP80N06 Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 80 A (Tc)
On-State Resistance (Rds On) @ 40A, 10V 10 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 74 nC
Input Capacitance (Ciss) @ 25V 3190 pF
Power Dissipation (Max) 176 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDP80N06 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
  • Continuous Drain Current (Id): Must equal or exceed 80A at 25°C
  • Package Type: Must be TO-220-3 or TO-220AB (mechanically compatible through-hole packages)
  • FET Type: N-Channel only
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature Range: Must encompass -55°C to 175°C

Secondary Compatibility Parameters:

  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Affects gate drive requirements
  • Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into two categories: Manufacturer-Recommended Alternatives (onsemi QFET® series) and Similar Cross-Reference Parts (alternative manufacturers meeting or exceeding electrical specifications).

Parameter Comparison

Parameter FDP80N06 FQP50N06L-EPKE0003 AOT2610L IRF1010EZPBF IRFZ44VZPBF IRL2505PBF IXTP90N055T2 PSMN3R0-60PS,127 PSMN4R6-60PS,127 STP60NF06L Unit
Vdss 60 60 60 60 60 55 55 60 60 60 V
Id @ 25°C 80 52.4 55 75 57 104 90 100 100 60 A (Tc)
Rds On (Max) @ 10V 10 21 10.7 8.5 12 8 8.4 3 4.6 14 mOhm
Vgs(th) @ 250µA 4 2.5 2.5 4 4 2 4 4 4 1 V
Qg @ 10V 74 32 30 86 65 130 42 130 70.8 66 nC
Ciss @ 25V 3190 1630 2007 2810 1690 5000 2770 8079 4426 2000 pF
Power Dissipation (Max) 176 121 75 140 92 200 150 306 211 110 W (Tc)
Operating Temp Range -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -65 to 175 °C (TJ)
Package TO-220-3 TO-220-3 TO-220-3 TO-220AB TO-220AB TO-220AB TO-220-3 TO-220AB TO-220AB TO-220
Product Status Obsolete Active Active Active Not For New Designs Not For New Designs Active Obsolete Obsolete Active
RoHS3 Compliant Yes Yes Yes Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Tier 1: Manufacturer-Recommended Substitute

The FQP50N06L-EPKE0003 (onsemi QFET® series) is the primary recommended substitute. This part maintains the same 60V voltage rating and TO-220-3 package as the FDP80N06. While the continuous drain current is reduced to 52.4A, this device is in Active product status, ensuring long-term availability and supply chain stability. The FQP50N06L-EPKE0003 is suitable for applications where the 80A rating of the original part exceeds actual circuit requirements. RoHS3 compliance and REACH unaffected status align with current regulatory requirements.

Tier 2: Direct Current-Class Alternatives (60V, ≥75A)

For applications requiring drain current capability approaching or matching the original 80A specification, the following parts are suitable:

  • IRF1010EZPBF (Infineon HEXFET®): 75A continuous drain current, 60V rating, Active product status. Superior on-state resistance (8.5 mOhm) reduces conduction losses. TO-220AB package is mechanically compatible with TO-220-3 footprints.

  • IXTP90N055T2 (IXYS TrenchT2™): 90A continuous drain current at 55V rating. Exceeds current capability of FDP80N06. Active product status. Slightly lower voltage rating (55V vs. 60V) is acceptable for most 60V-class applications with adequate design margin.

Tier 3: High-Current Alternatives (60V, ≥100A)

For applications requiring maximum current handling:

  • PSMN4R6-60PS,127 (Nexperia): 100A continuous drain current, 60V rating. Superior on-state resistance (4.6 mOhm). Obsolete product status limits suitability for new designs but remains available in inventory.

  • PSMN3R0-60PS,127 (Nexperia): 100A continuous drain current, 60V rating. Lowest on-state resistance (3 mOhm) among all listed alternatives. Obsolete product status.

Tier 4: Lower-Current Alternatives (Not Recommended for Direct Replacement)

  • FQP50N06L-EPKE0003, AOT2610L, IRFZ44VZPBF, and STP60NF06L deliver drain currents below 80A and are suitable only when circuit design permits reduced current capability.

Product Status Considerations:

  • Active Status Parts: IRF1010EZPBF, IXTP90N055T2, AOT2610L, STP60NF06L, FQP50N06L-EPKE0003 are recommended for new designs.
  • Not For New Designs: IRFZ44VZPBF, IRL2505PBF should be used only in legacy system maintenance.
  • Obsolete Status: PSMN3R0-60PS,127, PSMN4R6-60PS,127 are available but not recommended for new production.

Frequently Asked Questions (FAQ)

Q: Can the FQP50N06L-EPKE0003 directly replace the FDP80N06 in all applications?

A: The FQP50N06L-EPKE0003 is suitable for applications where the circuit design does not require the full 80A continuous drain current capability. Both devices share the same 60V voltage rating, TO-220-3 package, and operating temperature range. Circuit analysis must confirm that 52.4A continuous current is sufficient for the intended application.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are through-hole packages with identical pin configurations and PCB footprints. TO-220AB is a variant designation used by some manufacturers. Devices in either package are mechanically interchangeable on standard TO-220 footprints.

Q: Why is the IXTP90N055T2 rated at 55V instead of 60V?

A: The IXTP90N055T2 has a maximum drain-to-source voltage rating of 55V, which is 5V lower than the FDP80N06. This part is suitable for applications designed for 55V operation or where the circuit includes adequate voltage margin. For circuits specifically requiring 60V rating, use 60V-rated alternatives such as IRF1010EZPBF or PSMN4R6-60PS,127.

Q: What does "Not For New Designs" product status mean?

A: Parts marked "Not For New Designs" are legacy devices that remain available but are not recommended for incorporation into new product designs. These parts may have limited future availability or may be subject to discontinuation. For new designs, select parts with Active product status.

Q: How do on-state resistance (Rds On) differences affect circuit performance?

A: Lower Rds On values reduce conduction losses and heat generation. The FDP80N06 has 10 mOhm Rds On. Alternatives such as PSMN3R0-60PS,127 (3 mOhm) or IRF1010EZPBF (8.5 mOhm) generate less heat during operation. Higher Rds On values such as FQP50N06L-EPKE0003 (21 mOhm) increase power dissipation and may require enhanced thermal management.

Q: Are all listed substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: Can I use a part with higher drain current rating than the FDP80N06?

A: Yes. Parts rated for 90A, 100A, or 104A continuous drain current are suitable substitutes. Higher current ratings provide additional design margin and do not create compatibility issues. The circuit will operate within the lower current requirements of the original design.

Q: What is gate charge (Qg) and why does it matter?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower Qg values reduce switching losses and allow faster switching speeds. The FDP80N06 has 74 nC Qg. Alternatives with lower Qg (such as AOT2610L at 30 nC or FQP50N06L-EPKE0003 at 32 nC) improve switching efficiency.

Q: Is the FDP80N06 still available for purchase?

A: The FDP80N06 is classified as obsolete. While inventory may remain available through component distributors, long-term availability is not guaranteed. New designs should incorporate Active-status alternatives to ensure supply chain continuity.

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