FDP7N50 Equivalent & Substitute Parts

Part Overview

The FDP7N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 7A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is classified as obsolete. The UniFET™ series component delivers 89W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Due to the obsolete product status of the FDP7N50, equivalent substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements. The substitute parts listed below maintain electrical and mechanical compatibility within the specified parameter tolerances.

Key Parameters

Parameter	FDP7N50 Value	Unit
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	7	A (Tc)
Rds On (Max) @ Id, Vgs	900	mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.6	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	940	pF @ 25V
Power Dissipation (Max)	89	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for the FDP7N50 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 500V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET (Metal Oxide) (exact match required)
Package / Case: TO-220-3 (exact match required)
Mounting Type: Through Hole (exact match required)
Operating Temperature Range: -55°C to 150°C (minimum requirement)

Allowable Variation Parameters:

Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 7A
Rds On (Max): Equal to or less than 900mOhm
Power Dissipation (Max): Equal to or greater than 89W
Gate Charge (Qg): Variation permitted within thermal design constraints
Input Capacitance (Ciss): Variation permitted within circuit design constraints

All substitute parts listed below satisfy these criteria and maintain functional equivalence with the FDP7N50 within the specified electrical and mechanical boundaries.

Parameter Comparison

Parameter	FDP7N50 (onsemi)	STP9NK50Z (STMicroelectronics)	IRF840APBF (Vishay Siliconix)	IXTP12N50PM (IXYS)	STP8NM50N (STMicroelectronics)
Drain to Source Voltage (Vdss)	500V	500V	500V	500V	500V
Current - Continuous Drain (Id) @ 25°C	7A	7.2A	8A	6A	5A
Rds On (Max) @ Id, Vgs	900mOhm @ 3.5A, 10V	850mOhm @ 3.6A, 10V	850mOhm @ 4.8A, 10V	500mOhm @ 6A, 10V	790mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA	4.5V @ 100µA	4V @ 250µA	5.5V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 10V	32nC @ 10V	38nC @ 10V	29nC @ 10V	14nC @ 10V
Vgs (Max)	±30V	±30V	±30V	±30V	±25V
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 25V	910pF @ 25V	1018pF @ 25V	1830pF @ 25V	364pF @ 50V
Power Dissipation (Max)	89W	110W	125W	50W	45W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STP9NK50Z (STMicroelectronics)

The STP9NK50Z is the closest electrical equivalent to the FDP7N50, offering 7.2A continuous drain current with 110W power dissipation. This part maintains active product status and ROHS3 compliance. The gate charge specification of 32nC is higher than the FDP7N50, requiring circuit evaluation for switching speed applications. This substitute is suitable for direct replacement in applications where the increased power dissipation capability is beneficial.

IRF840APBF (Vishay Siliconix)

The IRF840APBF provides 8A continuous drain current with 125W power dissipation, exceeding FDP7N50 specifications. This part carries active product status and ROHS3 compliance. The gate charge of 38nC represents the highest among substitute options, necessitating circuit analysis for gate drive requirements. This substitute is appropriate for applications requiring enhanced current handling and thermal performance.

IXTP12N50PM (IXYS)

The IXTP12N50PM operates at 6A continuous drain current with 50W power dissipation, representing a lower-performance substitute. This part maintains active product status and ROHS3 compliance. The significantly lower power dissipation rating and reduced current capability restrict this substitute to applications with lower thermal and current demands. The input capacitance of 1830pF is substantially higher than the FDP7N50, affecting switching characteristics.

STP8NM50N (STMicroelectronics)

The STP8NM50N delivers 5A continuous drain current with 45W power dissipation, representing the lowest-performance substitute. This part maintains active product status and ROHS3 compliance. The reduced current and power ratings limit this substitute to applications with minimal thermal and current requirements. The maximum gate voltage specification of ±25V is lower than the FDP7N50, requiring circuit compatibility verification.

Frequently Asked Questions (FAQ)

Q: Can the STP9NK50Z directly replace the FDP7N50 without circuit modifications?

A: The STP9NK50Z maintains electrical compatibility within the critical parameters of voltage rating, current capability, and package configuration. However, the increased gate charge (32nC versus 16.6nC) may affect switching speed and gate drive circuit performance. Circuit evaluation is necessary to confirm gate drive adequacy.

Q: What is the primary reason the FDP7N50 requires substitution?

A: The FDP7N50 is classified as obsolete, making it unavailable for new production and future procurement. Active substitute parts ensure design continuity and component availability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts maintain ROHS3 compliance, matching the environmental and regulatory status of the FDP7N50.

Q: Which substitute part offers the best thermal performance?

A: The IRF840APBF provides the highest power dissipation rating at 125W, followed by the STP9NK50Z at 110W. Selection depends on thermal design requirements and application duty cycle.

Q: Can the IXTP12N50PM be used in high-current applications?

A: The IXTP12N50PM is rated for 6A continuous drain current, which is below the FDP7N50 specification of 7A. This substitute is suitable only for applications with current demands at or below 6A.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge affects switching speed and gate drive power requirements. Higher gate charge values (IRF840APBF at 38nC, STP9NK50Z at 32nC) require more gate drive current and energy compared to the FDP7N50 (16.6nC). Gate drive circuit verification is necessary when substituting parts with significantly different gate charge specifications.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes, all substitute parts are packaged in TO-220-3 Through Hole configuration, ensuring mechanical and thermal interface compatibility with the FDP7N50.

Q: Which substitute part has the lowest on-resistance?

A: The IXTP12N50PM offers the lowest on-resistance at 500mOhm, providing superior conduction efficiency. However, this part has reduced current and power ratings compared to the FDP7N50.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: Interchangeability depends on specific application requirements. The STP9NK50Z and IRF840APBF are closest in performance to the FDP7N50 and offer the highest compatibility. The IXTP12N50PM and STP8NM50N are suitable only for lower-current applications and should not be mixed with higher-rated parts in the same circuit without design modification.

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