FDP6670AL Equivalent & Substitute Parts

Part Overview

The FDP6670AL is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 80A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is part of the PowerTrench® series. This component is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement planning. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the through-hole TO-220-3 package format.

Substiute Parts

FDP6670AL
onsemiIn Stock: 9799FDP6670AL Datasheet
FDP6670AL
Current Part
IPP055N03LGXKSA1
Infineon TechnologiesIn Stock: 6944IPP055N03LGXKSA1 Datasheet
IPP055N03LGXKSA1
Similar
STP70NS04ZC
STMicroelectronicsIn Stock: 8301STP70NS04ZC Datasheet
STP70NS04ZC
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 80 A (Ta)
Rds On (Max) @ 40A, 10V 6.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Gate Charge (Qg) @ 5V 33 nC
Power Dissipation (Max) 68 W (Tc)
Operating Temperature Range -65 to 175 °C (TJ)
Package Type TO-220-3 Through Hole

Substitute Part Grouping Explanation

Substitution of the FDP6670AL is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating of 30V or higher to ensure safe operation within the original design envelope.

Current Capacity: The continuous drain current rating must meet or exceed 80A at 25°C to support the same load conditions as the original part.

Package Format: All substitutes must use the TO-220-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsinking arrangements.

On-Resistance (Rds On): The maximum on-resistance at specified gate and drain conditions must not significantly exceed the original specification to maintain thermal performance and power efficiency.

Gate Charge and Threshold Voltage: These parameters affect switching characteristics and gate drive requirements; substitutes must remain within acceptable ranges to ensure compatibility with existing gate drive circuits.

Temperature Range: Operating temperature specifications must support the -65°C to 175°C range or be compatible with the actual operating conditions of the application.

Parameter Comparison

Parameter FDP6670AL (onsemi) IPP055N03LGXKSA1 (Infineon) STP70NS04ZC (STMicroelectronics)
Drain to Source Voltage (Vdss) 30V 30V 33V
Continuous Drain Current (Id) @ 25°C 80A (Ta) 50A (Tc) 80A (Tc)
Rds On (Max) @ 10V Vgs 6.5 mOhm @ 40A 5.5 mOhm @ 30A 11 mOhm @ 40A
Gate Threshold Voltage (Vgs(th)) @ 250µA 3V 2.2V 4V @ 1mA
Gate Charge (Qg) 33 nC @ 5V 31 nC @ 10V 58 nC @ 10V
Power Dissipation (Max) 68W (Tc) 68W (Tc) 180W (Tc)
Operating Temperature Range -65 to 175°C (TJ) -55 to 175°C (TJ) -55 to 175°C (TJ)
Package Type TO-220-3 TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole Through Hole

Engineering Selection Recommendations

IPP055N03LGXKSA1 (Infineon Technologies): This substitute is rated for 30V Vdss, matching the original specification exactly. However, the continuous drain current is limited to 50A (Tc), which is 37.5% lower than the FDP6670AL's 80A rating. This part is classified as "Not For New Designs" and carries RoHS3 compliance. The lower current rating restricts its use to applications where the actual operating current does not exceed 50A. The on-resistance of 5.5 mOhm at 30A is superior to the original part's 6.5 mOhm at 40A, providing better thermal efficiency at lower current levels. Operating temperature range is -55 to 175°C, which is 10°C narrower at the lower end than the original part.

STP70NS04ZC (STMicroelectronics): This substitute provides 33V Vdss, which is 3V higher than the original specification, and maintains the 80A continuous drain current rating at Tc. The part is classified as "Active" and carries RoHS3 compliance. The on-resistance of 11 mOhm at 40A is higher than the original 6.5 mOhm, resulting in increased power dissipation under identical load conditions. However, the maximum power dissipation rating of 180W (Tc) is significantly higher than the original 68W, providing superior thermal headroom. Gate charge is 58 nC at 10V, which is 75% higher than the original 33 nC at 5V, requiring higher gate drive energy. Operating temperature range is -55 to 175°C, matching the lower temperature limit constraint of the Infineon part.

For applications requiring the full 80A continuous current capacity, the STP70NS04ZC is the only viable substitute among the listed options. For applications operating at 50A or below, the IPP055N03LGXKSA1 offers improved on-resistance characteristics. Both substitutes are compatible with the TO-220-3 package format and support the required voltage and temperature specifications for most industrial applications.

Frequently Asked Questions (FAQ)

Q: Can the IPP055N03LGXKSA1 be used as a direct replacement for the FDP6670AL in all applications?

A: No. The IPP055N03LGXKSA1 is rated for 50A continuous drain current, compared to the FDP6670AL's 80A. Direct substitution is only valid for applications where the actual operating current does not exceed 50A. Applications requiring the full 80A capacity must use the STP70NS04ZC or identify alternative parts.

Q: What is the impact of the higher on-resistance in the STP70NS04ZC?

A: The STP70NS04ZC has an on-resistance of 11 mOhm at 40A, compared to 6.5 mOhm for the FDP6670AL. At 40A drain current, this results in approximately 69% higher conduction losses (I²R losses). The higher power dissipation rating of 180W (Tc) accommodates this increase, but thermal management design must account for the additional heat generation.

Q: Are there temperature range limitations when substituting these parts?

A: Yes. Both substitute parts have a minimum operating temperature of -55°C, compared to the FDP6670AL's -65°C. Applications requiring operation below -55°C cannot use these substitutes. The maximum temperature of 175°C is consistent across all three parts.

Q: How does gate charge affect circuit design when substituting the STP70NS04ZC?

A: The STP70NS04ZC has a gate charge of 58 nC at 10V, compared to 33 nC at 5V for the FDP6670AL. Higher gate charge requires more energy from the gate drive circuit to switch the device. Existing gate drive circuits must be evaluated to ensure sufficient current and voltage capability to drive the substitute part within acceptable switching times.

Q: Are all substitute parts available in the same package configuration?

A: Yes. All three parts use the TO-220-3 through-hole package format, ensuring mechanical compatibility with existing PCB layouts. However, the IPP055N03LGXKSA1 is supplied in tube packaging, while the STP70NS04ZC is also supplied in tube packaging. Verify packaging format with your supplier to ensure compatibility with assembly processes.

Q: What is the significance of the "Not For New Designs" status of the IPP055N03LGXKSA1?

A: This designation indicates that Infineon is not recommending this part for new circuit designs. While the part remains available and functional, long-term availability cannot be guaranteed. For new designs, the STP70NS04ZC (classified as "Active") is the preferred choice among the listed substitutes.

Q: Can the FDP6670AL be used in place of the STP70NS04ZC?

A: No. The FDP6670AL is rated for 30V Vdss, while the STP70NS04ZC is rated for 33V. Using a lower-voltage-rated device in a circuit designed for 33V operation creates risk of device failure due to overvoltage stress. Additionally, the FDP6670AL is classified as obsolete, making it unsuitable for new applications.

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