FDP5N50 Equivalent & Substitute Parts

Part Overview

The FDP5N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 5A continuous drain current in a through-hole TO-220-3 package. Manufactured by onsemi under the UniFET™ series, this device is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing production support, design updates, and component availability assurance. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating packaging and series variations.

Substiute Parts

FDP5N50
onsemiIn Stock: 8605FDP5N50 Datasheet
FDP5N50
Current Part
FDP5N50NZ
onsemiIn Stock: 15200FDP5N50NZ Datasheet
FDP5N50NZ
Similar
AOT5N50
Alpha & Omega Semiconductor Inc.In Stock: 14140AOT5N50 Datasheet
AOT5N50
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 5 A
On-State Resistance (Rds On Max) @ Id, Vgs 1.4 Ohm @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 5 V @ 250µA
Power Dissipation (Max) 85 W
Operating Temperature Range -55 to 150 °C
Package Type TO-220-3 Through Hole
Gate Charge (Qg Max) @ Vgs 15 nC @ 10V
Input Capacitance (Ciss Max) @ Vds 640 pF @ 25V

Substitute Part Grouping Explanation

Substitution eligibility for the FDP5N50 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating of 500V to ensure equivalent voltage withstand capability in the application circuit.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) at or above 5A at 25°C to handle the same load conditions without thermal derating.

On-State Resistance (Rds On): Substitute parts with Rds On values at or below 1.4 Ohm (measured at specified Id and Vgs conditions) ensure equivalent or improved conduction losses and thermal performance.

Package and Mounting: All substitute parts utilize through-hole TO-220 or TO-220-3 packages, maintaining mechanical and thermal interface compatibility with the original design.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating temperature range to ensure reliability across all environmental conditions.

Gate Charge and Input Capacitance: These parameters influence switching speed and drive circuit requirements. Substitute parts with comparable or lower values maintain circuit timing and driver compatibility.

The following parts meet these substitution criteria: FDP5N50NZ (onsemi, UniFET-II™ series) and AOT5N50 (Alpha & Omega Semiconductor Inc.).

Parameter Comparison

Parameter FDP5N50 FDP5N50NZ AOT5N50 Unit
Manufacturer onsemi onsemi Alpha & Omega Semiconductor Inc.
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 500 500 V
Continuous Drain Current (Id) @ 25°C 5 4.5 5 A
Drive Voltage (Max Rds On) 10 10 10 V
Rds On (Max) @ Id, Vgs 1.4 @ 2.5A, 10V 1.5 @ 2.25A, 10V 1.5 @ 2.5A, 10V Ohm
Gate Threshold Voltage (Vgs(th) Max) @ Id 5 @ 250µA 5 @ 250µA 4.5 @ 250µA V
Gate Charge (Qg Max) @ Vgs 15 @ 10V 12 @ 10V 19 @ 10V nC
Vgs (Max) ±30 ±25 ±30 V
Input Capacitance (Ciss Max) @ Vds 640 @ 25V 440 @ 25V 620 @ 25V pF
Power Dissipation (Max) 85 78 104 W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Obsolete Not For New Designs

Engineering Selection Recommendations

FDP5N50NZ (onsemi, UniFET-II™ Series): This part is a direct onsemi family substitute with identical voltage rating (500V) and comparable current handling (4.5A). The FDP5N50NZ exhibits lower gate charge (12 nC vs. 15 nC) and reduced input capacitance (440 pF vs. 640 pF), resulting in faster switching characteristics. On-state resistance is marginally higher (1.5 Ohm vs. 1.4 Ohm), with reduced power dissipation (78W vs. 85W). Both parts share obsolete product status. The FDP5N50NZ is supplied in tube packaging and carries RoHS3 compliance certification. Selection of this part is appropriate for applications where the 4.5A current rating is sufficient and improved switching performance is beneficial.

AOT5N50 (Alpha & Omega Semiconductor Inc.): This part matches the original FDP5N50 current rating (5A) and voltage specification (500V) with identical operating temperature range. The AOT5N50 provides higher power dissipation capability (104W vs. 85W), accommodating higher thermal loads. Gate threshold voltage is lower (4.5V vs. 5V), enabling faster turn-on response. Gate charge is higher (19 nC vs. 15 nC) and input capacitance is comparable (620 pF vs. 640 pF). The AOT5N50 carries RoHS3 compliance and is classified as "Not For New Designs," indicating limited future availability. This part is suitable for direct replacement in existing designs where the 5A current rating and enhanced thermal capability are required.

Product Status Consideration: Both substitute parts carry obsolete or restricted product status classifications. For new design initiatives, evaluation of current-generation N-Channel 500V MOSFETs from active product lines is recommended to ensure long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the FDP5N50NZ be used as a direct replacement for the FDP5N50?

A: The FDP5N50NZ is electrically compatible for applications where the 4.5A continuous drain current rating is sufficient. Both parts share identical 500V voltage rating, TO-220-3 package, and operating temperature range. The FDP5N50NZ exhibits improved switching characteristics due to lower gate charge and input capacitance. On-state resistance is marginally higher (1.5 Ohm vs. 1.4 Ohm), resulting in slightly increased conduction losses. Thermal design verification is required if the original design operated near the 85W power dissipation limit of the FDP5N50.

Q: What are the key differences between the FDP5N50 and AOT5N50?

A: Both parts maintain identical 500V voltage rating and 5A continuous drain current. The AOT5N50 provides higher power dissipation capability (104W vs. 85W) and lower gate threshold voltage (4.5V vs. 5V). Gate charge is higher in the AOT5N50 (19 nC vs. 15 nC), which may require driver circuit evaluation. The AOT5N50 is manufactured by Alpha & Omega Semiconductor Inc., whereas the FDP5N50 is an onsemi product. Both parts are classified as obsolete or restricted for new designs.

Q: Are there package compatibility concerns when substituting these parts?

A: All three parts (FDP5N50, FDP5N50NZ, and AOT5N50) utilize through-hole TO-220 or TO-220-3 packages with identical pin configurations and thermal interface characteristics. Direct mechanical substitution is supported without PCB layout modifications. Thermal mounting interface (heatsink contact area and mounting hole) remains unchanged across all three parts.

Q: How does gate charge affect circuit performance during substitution?

A: Gate charge (Qg) influences the switching speed and energy required by the gate drive circuit. The FDP5N50 specifies 15 nC gate charge, the FDP5N50NZ specifies 12 nC, and the AOT5N50 specifies 19 nC. Lower gate charge (FDP5N50NZ) enables faster switching with reduced driver power consumption. Higher gate charge (AOT5N50) requires longer switching transitions and increased driver current capability. Existing gate drive circuits designed for the FDP5N50 will function with both substitutes, though switching frequency and efficiency characteristics will vary.

Q: What compliance certifications apply to these substitute parts?

A: The FDP5N50 carries REACH Unaffected status and EAR99 export classification. The FDP5N50NZ is RoHS3 compliant with REACH Unaffected status and EAR99 classification. The AOT5N50 is RoHS3 compliant with REACH Unaffected status and EAR99 classification. All three parts are classified as HTSUS 8541.29.0095. Compliance verification with specific application and regional requirements is necessary prior to component selection.

Q: Can the FDP5N50 be substituted in new product designs?

A: The FDP5N50 is classified as obsolete and is not recommended for new designs. For new product development, current-generation N-Channel 500V MOSFET alternatives from active product lines should be evaluated. The FDP5N50NZ and AOT5N50 are also classified as obsolete or restricted for new designs. Component selection for new designs should prioritize parts with active product status and confirmed long-term availability from manufacturers.

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