FDP5690 Equivalent & Substitute Parts

Part Overview

The FDP5690 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 32A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for power switching applications requiring moderate current handling and thermal dissipation up to 58W.

The FDP5690 carries an Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FDP5690
onsemiIn Stock: 25296FDP5690 Datasheet
FDP5690
Current Part
STP45NF06
STMicroelectronicsIn Stock: 8832STP45NF06 Datasheet
STP45NF06
Similar
STP55NF06
STMicroelectronicsIn Stock: 155444STP55NF06 Datasheet
STP55NF06
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 32 A
On-State Resistance (Rds On Max) @ 10V 27 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Power Dissipation (Max) 58 W
Operating Temperature Range -65 to 175 °C
Package Type TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitute parts for the FDP5690 are selected based on electrical and mechanical compatibility within the following criteria:

Electrical Compatibility Requirements:

  • Drain-to-Source Voltage (Vdss): Equal to or greater than 60V
  • Gate Threshold Voltage (Vgs(th)): Matching 4V @ 250µA specification
  • Gate-Source Voltage (Vgs Max): ±20V maximum rating
  • FET Type: N-Channel MOSFET technology
  • Continuous Drain Current (Id): Equal to or exceeding 32A @ 25°C

Mechanical Compatibility Requirements:

  • Package Type: TO-220-3 or compatible TO-220 through-hole configuration
  • Mounting Type: Through-hole

Compliance Requirements:

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • ECCN Classification: EAR99

The substitute parts listed below meet all electrical and mechanical compatibility criteria and maintain equivalent functional performance for direct replacement in existing circuit designs.

Parameter Comparison

Parameter FDP5690 (onsemi) STP45NF06 (STMicroelectronics) STP55NF06 (STMicroelectronics)
Manufacturer onsemi STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Drain-to-Source Voltage (Vdss) 60 V 60 V 60 V
Continuous Drain Current (Id) @ 25°C 32 A 38 A 50 A
On-State Resistance (Rds On Max) @ 10V 27 mOhm @ 16A 28 mOhm @ 19A 18 mOhm @ 27.5A
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V 4 V 4 V
Gate Charge (Qg) @ 10V 33 nC 58 nC 60 nC
Input Capacitance (Ciss) @ 25V 1120 pF 980 pF 1300 pF
Power Dissipation (Max) 58 W 80 W 110 W
Operating Temperature Range -65 to 175 °C Up to 175 °C -55 to 175 °C
Package Type TO-220-3 TO-220 TO-220
Mounting Type Through Hole Through Hole Through Hole
Vgs (Max) ±20 V ±20 V ±20 V
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99

Engineering Selection Recommendations

STP45NF06 (STMicroelectronics): The STP45NF06 is an active product offering 38A continuous drain current, exceeding the FDP5690 specification of 32A. This part maintains electrical compatibility with matching Vdss (60V) and Vgs(th) (4V @ 250µA) parameters. The STP45NF06 provides increased thermal headroom with 80W power dissipation capability compared to the FDP5690's 58W rating. This substitute is suitable for applications where the additional current capacity and thermal performance provide design margin. The part carries RoHS3 compliance and active product status, ensuring long-term supply availability.

STP55NF06 (STMicroelectronics): The STP55NF06 is an active product offering 50A continuous drain current with superior on-state resistance performance (18 mOhm @ 27.5A versus 27 mOhm @ 16A for the FDP5690). This part maintains full electrical compatibility with 60V Vdss and 4V Vgs(th) specifications. The STP55NF06 delivers 110W maximum power dissipation, providing significant thermal margin for high-power applications. The operating temperature range extends to -55°C minimum, compared to the FDP5690's -65°C minimum. This substitute is appropriate for applications requiring enhanced current handling, reduced conduction losses, and improved thermal performance. The part carries RoHS3 compliance and active product status.

Both substitute parts are manufactured by STMicroelectronics, a primary semiconductor supplier with established supply chain infrastructure. Both maintain TO-220 through-hole packaging compatible with existing PCB designs and thermal management solutions. Selection between STP45NF06 and STP55NF06 depends on application current requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the STP45NF06 or STP55NF06 be used as direct replacements for the FDP5690 in existing circuit designs?

A: Yes. Both substitute parts maintain identical drain-to-source voltage (60V), gate threshold voltage (4V @ 250µA), and maximum gate-source voltage (±20V) specifications. The TO-220 package configuration is mechanically compatible with TO-220-3 through-hole PCB layouts. Pin assignments for drain, gate, and source terminals are standard across all three devices. Direct PCB substitution is supported without circuit modification.

Q: What are the key differences between the STP45NF06 and STP55NF06?

A: The primary differences are continuous drain current rating (38A versus 50A), on-state resistance (28 mOhm versus 18 mOhm at 10V), gate charge (58 nC versus 60 nC), and maximum power dissipation (80W versus 110W). The STP55NF06 provides superior current handling capacity and lower conduction losses. Selection depends on application current requirements and thermal design specifications.

Q: Are there any compliance or supply chain advantages to using the substitute parts?

A: Both STP45NF06 and STP55NF06 carry active product status from STMicroelectronics, ensuring established supply chain availability and long-term manufacturing support. Both parts are RoHS3 compliant and REACH unaffected. The FDP5690 carries obsolete product status, making substitute parts necessary for new production and ongoing supply continuity.

Q: How do the thermal characteristics compare between the three devices?

A: The FDP5690 is rated for 58W maximum power dissipation. The STP45NF06 provides 80W capability, and the STP55NF06 provides 110W capability. All three devices support operating temperatures up to 175°C (TJ). The STP55NF06 extends the minimum operating temperature to -55°C, compared to -65°C for the FDP5690 and STP45NF06. Higher power dissipation ratings provide increased thermal margin for applications with elevated ambient temperatures or continuous high-current operation.

Q: Are there any gate charge or input capacitance considerations for circuit design?

A: The FDP5690 specifies 33 nC gate charge at 10V and 1120 pF input capacitance at 25V. The STP45NF06 specifies 58 nC gate charge and 980 pF input capacitance. The STP55NF06 specifies 60 nC gate charge and 1300 pF input capacitance. Higher gate charge values require increased gate drive current for equivalent switching speed. Input capacitance affects high-frequency switching performance. Circuit designs with tight gate drive timing or high-frequency switching requirements should account for these parameter variations.

Q: What packaging and moisture sensitivity considerations apply to these parts?

A: All three devices are rated MSL 1 (Unlimited moisture sensitivity level), indicating no moisture absorption risk during storage or handling. All parts are supplied in through-hole TO-220 package configurations suitable for wave soldering, hand soldering, and automated assembly processes. Standard PCB handling and storage procedures apply without special moisture control requirements.

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