FDP5645 N-Channel MOSFET 60V 80A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP5645 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 80A continuous drain current at 25°C (Ta). The device is housed in a Through Hole TO-220-3 package and is part of the PowerTrench® series. The FDP5645 is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the Through Hole TO-220-3 package format.

Key Parameters

Parameter	FDP5645 Specification
Drain to Source Voltage (Vdss)	60 V
Continuous Drain Current (Id) @ 25°C	80A (Ta)
On-Resistance (Rds On Max) @ Id, Vgs	9.5 mOhm @ 40A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4V @ 250µA
Gate Charge (Qg Max) @ Vgs	107 nC @ 10V
Input Capacitance (Ciss Max) @ Vds	4468 pF @ 30V
Power Dissipation (Max)	125W (Tc)
Operating Temperature Range	-65°C to 175°C (TJ)
Package Type	TO-220-3 Through Hole
Gate Voltage (Vgs Max)	±20V

Substitute Part Grouping Explanation

Substitute parts for the FDP5645 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Voltage Rating Compatibility: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 60V or higher to ensure safe operation within the original design envelope.

Current Capacity: Substitute parts must support continuous drain current (Id) at or above 80A (Ta) to maintain equivalent current-handling capability.

On-Resistance (Rds On): The on-resistance characteristic at specified gate voltage and current levels determines power dissipation and thermal performance. Substitute parts with comparable or lower Rds On values maintain thermal equivalence.

Package Format: All substitute parts utilize Through Hole TO-220-3 or compatible TO-220 package variants to ensure mechanical and thermal interface compatibility.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with similar gate charge and input capacitance values maintain circuit performance characteristics.

Operating Temperature Range: Substitute parts must support the full operating temperature range of -55°C to 175°C (TJ) minimum to ensure reliability across thermal extremes.

Product Status and Compliance: Active product status and RoHS3 compliance provide assurance of ongoing availability and environmental regulatory adherence.

Parameter Comparison

Parameter	FDP5645 (onsemi)	AOT2610L (Alpha & Omega)	AOT470 (Alpha & Omega)	PSMN4R6-60PS,127 (Nexperia)	STP60NF06L (STMicroelectronics)
Drain to Source Voltage (Vdss)	60V	60V	75V	60V	60V
Continuous Drain Current (Id) @ 25°C	80A (Ta)	55A (Tc)	100A (Tc)	100A (Tc)	60A (Tc)
On-Resistance (Rds On Max) @ Vgs 10V	9.5 mOhm @ 40A	10.7 mOhm @ 20A	10.5 mOhm @ 30A	4.6 mOhm @ 25A	14 mOhm @ 30A
Gate Threshold Voltage (Vgs(th) Max)	4V @ 250µA	2.5V @ 250µA	4V @ 250µA	4V @ 1mA	1V @ 250µA
Gate Charge (Qg Max) @ 10V	107 nC	30 nC	136 nC	70.8 nC	66 nC
Input Capacitance (Ciss Max) @ 30V	4468 pF	2007 pF	5640 pF	4426 pF	2000 pF
Power Dissipation (Max)	125W (Tc)	75W (Tc)	268W (Tc)	211W (Tc)	110W (Tc)
Operating Temperature Range	-65°C to 175°C	-55°C to 175°C	-55°C to 175°C	-55°C to 175°C	-65°C to 175°C
Package Type	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Gate Voltage (Vgs Max)	±20V	±20V	±25V	±20V	±15V
Product Status	Obsolete	Active	Active	Obsolete	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

PSMN4R6-60PS,127 (Nexperia): This part provides the closest electrical match to the FDP5645 with identical 60V Vdss rating and superior on-resistance performance (4.6 mOhm vs. 9.5 mOhm), resulting in lower power dissipation and improved thermal efficiency. The 100A (Tc) current rating exceeds the FDP5645 specification. However, PSMN4R6-60PS,127 is classified as Obsolete, limiting long-term procurement viability. RoHS3 compliance is confirmed.

STP60NF06L (STMicroelectronics): This Active product from STMicroelectronics offers 60V Vdss rating with 60A (Tc) continuous drain current and 110W power dissipation. The on-resistance of 14 mOhm is higher than the FDP5645, resulting in increased power dissipation under equivalent current conditions. Operating temperature range extends to -65°C, matching the FDP5645. RoHS3 compliance and Active product status provide procurement assurance. This part is suitable for applications where the 60A current rating is sufficient and thermal management accommodates the higher on-resistance.

AOT470 (Alpha & Omega Semiconductor): This Active product provides elevated voltage rating (75V Vdss) with 100A (Tc) continuous drain current and 268W power dissipation capability. The on-resistance of 10.5 mOhm is comparable to the FDP5645. Gate charge of 136 nC is slightly elevated. The higher voltage rating provides design margin for transient overvoltage conditions. RoHS3 compliance and Active status support long-term availability. This part is suitable for designs requiring higher voltage headroom.

AOT2610L (Alpha & Omega Semiconductor): This Active product provides 60V Vdss rating with 55A (Tc) continuous drain current, which is below the FDP5645 80A specification. The on-resistance of 10.7 mOhm is comparable. Gate charge of 30 nC is significantly lower, reducing gate drive power requirements. This part is suitable only for applications where current requirements do not exceed 55A. RoHS3 compliance and Active status are confirmed.

For applications requiring direct electrical equivalence with Active product status and long-term availability, STP60NF06L is the primary recommendation. For applications requiring higher current capacity and thermal performance, AOT470 or PSMN4R6-60PS,127 provide superior specifications, with AOT470 offering Active product status.

Frequently Asked Questions (FAQ)

Q: Can AOT2610L directly replace FDP5645 in all applications?

A: No. AOT2610L provides 55A (Tc) continuous drain current, which is below the FDP5645 80A specification. Substitution is valid only for applications where actual drain current does not exceed 55A. Verify circuit current requirements before selection.

Q: What is the significance of the Rds On difference between FDP5645 and STP60NF06L?

A: FDP5645 specifies 9.5 mOhm on-resistance while STP60NF06L specifies 14 mOhm. At equivalent current levels, the higher on-resistance of STP60NF06L results in proportionally higher power dissipation and heat generation. Thermal management design must accommodate this difference. For applications with strict thermal constraints, PSMN4R6-60PS,127 (4.6 mOhm) or AOT470 (10.5 mOhm) provide superior performance.

Q: Why is PSMN4R6-60PS,127 listed as Obsolete if it provides superior electrical performance?

A: PSMN4R6-60PS,127 is classified as Obsolete by the manufacturer, indicating discontinued production. While electrical specifications are superior, procurement of new inventory may be limited or unavailable. For new designs requiring long-term component availability, Active products such as STP60NF06L or AOT470 are preferred.

Q: Are all substitute parts compatible with the TO-220-3 package footprint?

A: Yes. All listed substitute parts utilize TO-220-3 or compatible TO-220 package variants with identical pin configuration and thermal interface characteristics. Direct mechanical substitution on existing PCB layouts is supported.

Q: What is the impact of different Gate Charge (Qg) values on circuit design?

A: Gate charge affects the energy required to switch the MOSFET and the gate drive circuit design. FDP5645 specifies 107 nC at 10V. AOT2610L specifies 30 nC (lower), reducing gate drive power requirements. AOT470 specifies 136 nC (higher), requiring increased gate drive capability. Verify gate driver specifications support the selected part's gate charge requirement.

Q: Can AOT470 (75V Vdss) be used in a circuit designed for 60V operation?

A: Yes. AOT470 with 75V Vdss rating provides additional voltage margin and is fully compatible with 60V circuit designs. The higher voltage rating does not create incompatibility; it provides design margin for transient overvoltage conditions. No circuit modifications are required.

Q: What is the minimum operating temperature difference between FDP5645 and substitute parts?

A: FDP5645 and STP60NF06L support -65°C minimum operating temperature. AOT2610L, AOT470, and PSMN4R6-60PS,127 support -55°C minimum. For applications requiring operation below -55°C, FDP5645 or STP60NF06L are required.

Q: How does Input Capacitance (Ciss) affect substitute part selection?

A: Input capacitance affects switching speed and gate drive circuit design. FDP5645 specifies 4468 pF at 30V. STP60NF06L specifies 2000 pF (lower capacitance, faster switching). AOT470 specifies 5640 pF (higher capacitance, slower switching). For high-frequency switching applications, lower Ciss values reduce switching losses. Verify gate driver frequency capability matches the selected part's capacitance characteristics.

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