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FDP52N20 Equivalent & Substitute Parts
Part Overview
The FDP52N20 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 52A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is part of the UniFET™ series. The component is currently in active production status with 15,107 pieces in stock inventory.
Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across different manufacturers. Alternative models may be required due to supply chain constraints, inventory availability, or specific application requirements where performance parameters remain within acceptable operating ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 52 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | V |
| Rds On (Max) @ Id, Vgs | 49 | mOhm @ 26A, 10V |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 5 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 | nC @ 10V |
| Power Dissipation (Max) | 357 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-220-3 | Through Hole |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution eligibility for the FDP52N20 is determined by the following critical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss) must equal 200V
- Continuous Drain Current (Id) must be within the range of 50A to 56A at 25°C
- Drive Voltage (Max Rds On) must equal 10V
- Gate Threshold Voltage Vgs(th) must be rated at 5V or lower @ 250µA
- Operating Temperature Range must support -55°C minimum
Mechanical Compatibility Criteria:
- Package type must be TO-220-3 or TO-220AB (mechanically compatible through-hole packages)
- Mounting type must be Through Hole
Regulatory Compliance:
- RoHS3 Compliance required
- REACH Unaffected status required
The identified substitute parts meet all electrical and mechanical requirements while maintaining active product status and regulatory compliance.
Parameter Comparison
| Parameter | FDP52N20 (onsemi) | IRFB260NPBF (Infineon) | IXTP50N20P (IXYS) |
|---|---|---|---|
| Manufacturer | onsemi | Infineon Technologies | IXYS |
| Drain to Source Voltage (Vdss) | 200V | 200V | 200V |
| Continuous Drain Current (Id) @ 25°C | 52A (Tc) | 56A (Tc) | 50A (Tc) |
| Drive Voltage (Max Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 26A, 10V | 40mOhm @ 34A, 10V | 60mOhm @ 50A, 10V |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V | 220nC @ 10V | 70nC @ 10V |
| Power Dissipation (Max) | 357W (Tc) | 380W (Tc) | 360W (Tc) |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 175°C (TJ) | -55°C to 175°C (TJ) |
| Package Type | TO-220-3 | TO-220AB | TO-220-3 |
| Product Status | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Inventory (Pcs) | 15,107 | 20,400 | 1,557 |
Engineering Selection Recommendations
FDP52N20 (Primary Component)
The FDP52N20 remains the primary selection when available. This onsemi UniFET™ device offers balanced performance across all specified parameters with active product status and full RoHS3 compliance. Current inventory of 15,107 pieces supports standard procurement timelines.
IRFB260NPBF (Infineon Technologies) - Primary Substitute
The IRFB260NPBF is the preferred substitute when FDP52N20 availability is constrained. This Infineon HEXFET® device exceeds the primary component in continuous drain current (56A vs. 52A) and power dissipation (380W vs. 357W). The lower on-resistance (40mOhm vs. 49mOhm) provides improved thermal performance. Extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C) supports broader application environments. The TO-220AB package is mechanically compatible with TO-220-3 footprints. All regulatory requirements are met with ROHS3 compliance and REACH Unaffected status. Inventory availability of 20,400 pieces ensures supply continuity.
IXTP50N20P (IXYS) - Secondary Substitute
The IXTP50N20P serves as a secondary substitute option when primary alternatives are unavailable. This IXYS Polar series device maintains the 200V voltage rating and 50A continuous drain current specification. The TO-220-3 package provides direct mechanical compatibility. Extended operating temperature range (-55°C to 175°C) matches the Infineon alternative. ROHS3 compliance and REACH Unaffected status satisfy regulatory requirements. Limited inventory of 1,557 pieces restricts this option to applications with lower volume requirements.
Frequently Asked Questions (FAQ)
Q: Can the IRFB260NPBF directly replace the FDP52N20 in existing designs?
A: Yes. Both devices share identical 200V drain-to-source voltage and 10V drive voltage specifications. The IRFB260NPBF's higher continuous drain current (56A vs. 52A) and improved on-resistance provide enhanced performance margins. The TO-220AB package is mechanically compatible with TO-220-3 footprints in standard through-hole applications. Pin configuration remains identical across both package variants.
Q: What are the thermal performance differences between these three devices?
A: The IRFB260NPBF offers the highest power dissipation rating at 380W, followed by the IXTP50N20P at 360W, and the FDP52N20 at 357W. The IRFB260NPBF's lower on-resistance (40mOhm) generates less heat during operation compared to the FDP52N20 (49mOhm) and IXTP50N20P (60mOhm). Extended maximum junction temperature ratings on the Infineon and IXYS devices (-55°C to 175°C) provide additional thermal headroom compared to the onsemi component (-55°C to 150°C).
Q: Are all three devices RoHS3 compliant?
A: Yes. The FDP52N20, IRFB260NPBF, and IXTP50N20P are all ROHS3 Compliant and REACH Unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.
Q: What is the significance of gate charge differences between these devices?
A: Gate charge (Qg) affects switching speed and driver circuit requirements. The FDP52N20 specifies 63nC at 10V, the IXTP50N20P specifies 70nC at 10V, and the IRFB260NPBF specifies 220nC at 10V. Higher gate charge requires more driver current to achieve equivalent switching speeds. Applications with tight switching frequency requirements should account for these differences in gate driver design.
Q: Which substitute offers the best current handling capability?
A: The IRFB260NPBF provides the highest continuous drain current rating at 56A, compared to 52A for the FDP52N20 and 50A for the IXTP50N20P. This additional current capacity provides design margin for applications operating near maximum current specifications.
Q: Are the TO-220-3 and TO-220AB packages interchangeable?
A: Yes, for through-hole mounting applications. Both packages use identical pin configurations and spacing. The TO-220AB designation indicates a variant of the standard TO-220-3 package. Direct substitution on existing PCBs is mechanically and electrically compatible.
Q: What inventory considerations should influence part selection?
A: The FDP52N20 has the highest inventory at 15,107 pieces, supporting immediate availability for standard orders. The IRFB260NPBF offers 20,400 pieces, providing the largest supply buffer. The IXTP50N20P has limited inventory at 1,557 pieces, making it suitable only for applications with lower volume requirements or when other options are exhausted.
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