FDP51N25 Equivalent & Substitute Parts

Part Overview

The FDP51N25 is an N-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage with 51A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and belongs to the UniFET™ series. The part is currently in active product status with 18,659 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package type and mounting configuration. Alternative models may be required due to component availability, supply chain considerations, or specific application requirements that benefit from alternative electrical characteristics within acceptable tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	250	V
Continuous Drain Current (Id) @ 25°C	51	A
Rds On (Max) @ 25.5A, 10V	60	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	70	nC
Power Dissipation (Max)	320	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the FDP51N25 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must be equal to or greater than 250V
Continuous Drain Current (Id): Must be equal to or greater than 51A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
Rds On (Max): Should not exceed 60mOhm at rated conditions to maintain thermal performance
Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Factors:

Gate Threshold Voltage (Vgs(th)): Acceptable range 4V to 5V
Gate Charge (Qg): Values between 21nC and 78nC are acceptable
Power Dissipation: Must support minimum 320W at Tc

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (Vdss = 250V, Id ≥ 51A): Parts meeting or exceeding the exact voltage and current specifications of the FDP51N25.

Category B - Functional Alternatives (Vdss ≥ 250V, Id ≥ 25A): Parts with higher voltage ratings or lower current ratings that can operate within the FDP51N25 application envelope but with different thermal or switching characteristics.

Parameter Comparison

Parameter	FDP51N25	IXTP50N25T	SUP40N25-60-E3	IPP600N25N3GXKSA1	IXFP30N25X3	IXFP26N30X3	IXFP38N30X3	STP50NF25
Manufacturer	onsemi	IXYS	Vishay Siliconix	Infineon Technologies	IXYS	IXYS	IXYS	STMicroelectronics
Vdss (V)	250	250	250	250	250	300	300	250
Id @ 25°C (A)	51	50	40	25	30	26	38	45
Rds On (Max) (mOhm)	60	50	60	60	60	66	50	69
Vgs(th) (V)	5	5	4	4	4.5	4.5	4.5	4
Gate Charge (nC)	70	78	140	29	21	22	35	68.2
Power Dissipation (W)	320	400	300	136	176	170	240	160
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
Inventory (Pcs)	18,659	27,400	1,462	1,615	823	1,190	1,679	4,723

Engineering Selection Recommendations

Primary Substitute - IXTP50N25T: The IXTP50N25T from IXYS is the closest functional equivalent to the FDP51N25. Both devices share identical Vdss (250V) and nearly equivalent continuous drain current specifications (50A vs. 51A). The IXTP50N25T features superior Rds On performance (50mOhm vs. 60mOhm) and higher power dissipation capability (400W vs. 320W). Both parts maintain the same operating temperature range (-55°C to 150°C) and TO-220-3 package configuration. This part is ROHS3 compliant and REACH unaffected, with 27,400 units in stock, providing excellent availability.

Secondary Substitute - SUP40N25-60-E3: The SUP40N25-60-E3 from Vishay Siliconix provides a functional alternative with 250V Vdss and 40A continuous drain current. While the current rating is lower than the FDP51N25, the Rds On specification (60mOhm) matches exactly, and power dissipation reaches 300W. This device supports an extended operating temperature range (-55°C to 175°C) and is ROHS3 compliant. The part is suitable for applications where the 40A current rating is sufficient.

Tertiary Substitutes - IXFP30N25X3 and STP50NF25: The IXFP30N25X3 (IXYS) and STP50NF25 (STMicroelectronics) offer 250V Vdss with 30A and 45A continuous drain current respectively. Both maintain TO-220-3 packaging and ROHS3 compliance. These parts are appropriate for applications requiring lower current handling than the FDP51N25 but within the same voltage class.

Higher Voltage Alternatives - IXFP26N30X3 and IXFP38N30X3: The IXFP26N30X3 and IXFP38N30X3 from IXYS feature 300V Vdss ratings, providing additional voltage margin. These parts are suitable for applications where higher voltage headroom is beneficial, though they represent a different voltage class from the FDP51N25.

Lower Current Alternative - IPP600N25N3GXKSA1: The IPP600N25N3GXKSA1 from Infineon Technologies matches the 250V Vdss but provides only 25A continuous drain current. This part is appropriate only for applications with significantly reduced current requirements and should not be used as a direct substitute for the FDP51N25 in high-current applications.

All recommended substitutes are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.

Frequently Asked Questions (FAQ)

Q: Can the IXTP50N25T directly replace the FDP51N25 in all applications?

A: The IXTP50N25T is functionally equivalent to the FDP51N25 for most applications. Both devices share 250V Vdss, similar continuous drain current ratings (50A vs. 51A), and identical TO-220-3 packaging. The IXTP50N25T actually provides improved performance with lower Rds On (50mOhm vs. 60mOhm) and higher power dissipation capability (400W vs. 320W). Pin configuration and mounting are identical, allowing direct PCB substitution.

Q: What is the minimum continuous drain current required for a substitute part?

A: A substitute part must have a continuous drain current rating equal to or greater than 51A at 25°C to maintain the electrical performance envelope of the FDP51N25. Parts with lower current ratings (such as the IPP600N25N3GXKSA1 at 25A) can only be used in applications where the actual circuit current requirement is lower than the original design specification.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes, all substitute parts listed are available in TO-220-3 through-hole packaging. This ensures mechanical compatibility with existing PCB layouts and thermal management solutions designed for the FDP51N25.

Q: What is the significance of Rds On matching between the FDP51N25 and substitute parts?

A: Rds On (on-state resistance) directly affects power dissipation and thermal performance. The FDP51N25 specifies 60mOhm maximum at 25.5A and 10V. Substitute parts with equal or lower Rds On values (such as IXTP50N25T at 50mOhm) provide equal or improved thermal characteristics. Parts with higher Rds On values (such as STP50NF25 at 69mOhm) will generate more heat and require thermal design verification.

Q: Can I use a 300V rated MOSFET (such as IXFP26N30X3) in place of the 250V FDP51N25?

A: Yes, a 300V rated MOSFET can be used in applications designed for 250V operation. The higher voltage rating provides additional safety margin and does not compromise functionality. However, the IXFP26N30X3 has a lower continuous drain current (26A vs. 51A), so it is only suitable if the actual circuit current requirement is 26A or lower.

Q: What compliance certifications should I verify when selecting a substitute part?

A: All listed substitute parts are ROHS3 compliant and REACH unaffected, matching the regulatory status of the FDP51N25. These certifications ensure compliance with current environmental and hazardous substance restrictions in electronic component manufacturing and distribution.

Q: How does gate charge (Qg) affect the choice of a substitute part?

A: Gate charge affects switching speed and driver circuit requirements. The FDP51N25 specifies 70nC at 10V. Substitute parts with lower gate charge (such as IXFP30N25X3 at 21nC) require less driver current and switch faster. Parts with higher gate charge (such as SUP40N25-60-E3 at 140nC) require more robust driver circuits but may offer other performance benefits. Gate charge differences do not prevent substitution but should be considered in driver circuit design.

Q: Is the operating temperature range important when selecting a substitute?

A: The FDP51N25 operates from -55°C to 150°C. Most substitute parts maintain this range, though some (SUP40N25-60-E3 and IPP600N25N3GXKSA1) extend to 175°C. A substitute part with a narrower temperature range than the FDP51N25 is not acceptable. A substitute part with an extended temperature range is acceptable and provides additional design margin.

Q: What inventory considerations should influence my substitute part selection?

A: The IXTP50N25T has the highest inventory availability at 27,400 units, compared to 18,659 units for the FDP51N25. The SUP40N25-60-E3 has the lowest inventory at 1,462 units. Inventory levels may influence lead time and cost considerations but should not override electrical compatibility requirements.

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