FDP3632 N-Channel MOSFET 100V 12A/80A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP3632 is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 100V drain-to-source voltage with 12A continuous drain current at Ta and 80A at Tc. The device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 310W at Tc. The FDP3632 carries a product status of "Not For New Designs," indicating that onsemi has discontinued this part for new applications. Identifying equivalent and substitute parts is necessary to support existing designs, facilitate production transitions, and ensure continued availability for maintenance and repair applications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	12	A
Continuous Drain Current @ 25°C (Tc)	80	A
On-Resistance (Rds On) @ 80A, 10V	9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Input Capacitance (Ciss) @ 25V	6000	pF
Power Dissipation (Max) @ Tc	310	W
Operating Temperature Range	−55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FDP3632 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Package Variant): Parts that maintain identical electrical specifications but differ in package form factor. The FDH3632 is a parametric equivalent offering the same electrical performance in a TO-247-3 package, suitable for applications where thermal management or PCB layout requirements differ from the standard TO-220-3 footprint.

Similar Electrical Performance (Functional Substitutes): Parts that share the same drain-to-source voltage rating (100V) and comparable continuous drain current capability (70A to 130A at Tc), on-resistance characteristics (8.0 to 10.5 mOhm @ 10V), and operating temperature range (−55°C to 175°C). These parts are functionally interchangeable in applications where the FDP3632 specifications are required, provided that package compatibility and thermal dissipation requirements are met.

Key substitution criteria:

Drain-to-Source Voltage (Vdss): 100V (exact match required)
Continuous Drain Current (Tc): 70A to 130A (accommodates design margin)
On-Resistance (Rds On): 8.0 to 10.5 mOhm @ 10V (within acceptable range)
Gate Threshold Voltage: 3.4V to 4.5V @ specified current (compatible gate drive)
Operating Temperature: −55°C to 175°C (full range match)
Package: TO-220-3 or compatible through-hole form factor
Compliance: ROHS3 compliant, REACH unaffected

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ Ref (pF)	Pd Max @ Tc (W)	Package	Status
FDP3632	onsemi	100	80	9.0	4.0	110	6000	310	TO-220-3	Not For New Designs
FDH3632	onsemi	100	80	9.0	4.0	110	6000	310	TO-247-3	Active
STP100N10F7	STMicroelectronics	100	80	8.0	4.5	61	4369	150	TO-220-3	Active
IXFP130N10T	IXYS	100	130	9.1	4.5	104	5080	360	TO-220-3	Active
AOT288L	Alpha & Omega Semiconductor	80	46	9.2	3.4	38	1871	93.5	TO-220-3	Active
AOT296L	Alpha & Omega Semiconductor	100	70	10.0	3.4	52	2785	107	TO-220-3	Active
PSMN009-100P,127	NXP Semiconductors	100	75	8.8	4.0	156	8250	230	TO-220-3	Active
CSD19533KCS	Texas Instruments	100	100	10.5	3.4	35	2670	188	TO-220-3	Active
IPP083N10N5AKSA1	Infineon Technologies	100	73	8.3	3.8	37	2730	100	TO-220-3	Active
IRFB4410ZPBF	Infineon Technologies	100	97	9.0	4.0	120	4820	230	TO-220-3	Active
STP120NF10	STMicroelectronics	100	110	10.5	4.0	233	5200	312	TO-220-3	Active

Engineering Selection Recommendations

Parametric Equivalent Selection: The FDH3632 (onsemi, TO-247-3) is the direct parametric equivalent of the FDP3632, offering identical electrical specifications with an alternative package form factor. The FDH3632 carries an Active product status and maintains full ROHS3 compliance and REACH unaffected status. Selection of the FDH3632 is appropriate for new designs or production transitions where the TO-247-3 package accommodates thermal and mechanical requirements.

Primary Functional Substitutes (100V Rating, 70A–130A Tc Range): The following parts maintain the 100V Vdss rating and deliver continuous drain current within the 70A to 130A range at Tc, ensuring functional compatibility with the FDP3632 in most applications:

STP100N10F7 (STMicroelectronics, TO-220-3): Matches the FDP3632 at 80A Tc with lower on-resistance (8.0 mOhm) and reduced gate charge (61 nC). Active status with ROHS3 compliance.
IXFP130N10T (IXYS, TO-220-3): Delivers 130A Tc with 9.1 mOhm on-resistance and enhanced power dissipation (360W). Active status with ROHS3 compliance.
PSMN009-100P,127 (NXP Semiconductors, TO-220-3): Provides 75A Tc with 8.8 mOhm on-resistance. Active status with REACH unaffected.
CSD19533KCS (Texas Instruments, TO-220-3): Rated for 100A Tc with 10.5 mOhm on-resistance and 188W power dissipation. Active status with ROHS3 compliance.
IRFB4410ZPBF (Infineon Technologies, TO-220-3): Delivers 97A Tc with 9.0 mOhm on-resistance and 230W power dissipation. Active status with ROHS3 compliance.
STP120NF10 (STMicroelectronics, TO-220-3): Rated for 110A Tc with 10.5 mOhm on-resistance and 312W power dissipation, matching the FDP3632 thermal capability. Active status with ROHS3 compliance.
IPP083N10N5AKSA1 (Infineon Technologies, TO-220-3): Provides 73A Tc with superior on-resistance (8.3 mOhm). Active status with ROHS3 compliance.

Secondary Functional Substitutes (80V Rating, Lower Current): The AOT288L (Alpha & Omega Semiconductor, 80V, 46A Tc) and AOT296L (Alpha & Omega Semiconductor, 100V, 70A Tc) are suitable for applications where the design margin permits reduced voltage or current ratings. Both parts carry Active status with ROHS3 compliance.

All recommended substitutes maintain the operating temperature range (−55°C to 175°C), gate drive compatibility (Vgs(th) 3.4V to 4.5V), and through-hole TO-220-3 package form factor. Selection should be based on specific application requirements for continuous drain current, thermal dissipation, on-resistance, and gate charge characteristics.

Frequently Asked Questions (FAQ)

Q: Can the FDH3632 directly replace the FDP3632 in existing PCB designs? A: The FDH3632 is a parametric equivalent with identical electrical specifications but uses a TO-247-3 package instead of TO-220-3. Direct PCB replacement is not possible without layout modification. The TO-247-3 package has a different pin footprint and mounting hole configuration. However, the FDH3632 is electrically interchangeable and suitable for new designs or redesigned PCBs.

Q: What is the primary difference between the FDP3632 and STP100N10F7? A: Both parts are rated for 100V and 80A continuous drain current at Tc in TO-220-3 packages. The STP100N10F7 features lower on-resistance (8.0 mOhm vs. 9.0 mOhm) and reduced gate charge (61 nC vs. 110 nC), resulting in improved switching efficiency and reduced power dissipation. The STP100N10F7 carries an Active product status.

Q: Can I use the IXFP130N10T as a substitute if my application only requires 80A? A: Yes. The IXFP130N10T is rated for 130A continuous drain current at Tc, which exceeds the FDP3632 requirement of 80A. The part is functionally compatible and provides design margin for current handling. The IXFP130N10T maintains the same 100V Vdss rating, compatible gate threshold voltage, and TO-220-3 package. Higher current rating does not compromise performance in lower-current applications.

Q: Why is the AOT288L listed as a substitute if it has an 80V rating instead of 100V? A: The AOT288L is classified as a similar electrical performance substitute for applications where the design margin permits operation at 80V instead of 100V. This part is not recommended as a direct replacement for designs requiring the full 100V rating. The AOT288L is suitable only for applications with reduced voltage requirements or where the actual operating voltage is below 80V.

Q: What does "Not For New Designs" status mean for the FDP3632? A: "Not For New Designs" indicates that onsemi has discontinued the FDP3632 for new applications. Existing inventory may remain available, but the manufacturer does not recommend this part for new product development. Designs currently using the FDP3632 should transition to an active substitute part to ensure long-term supply chain stability and continued manufacturer support.

Q: Are all substitute parts ROHS3 compliant? A: All recommended substitute parts listed carry ROHS3 compliance status. The FDP3632 itself is ROHS3 compliant. Compliance certification ensures that parts meet the Restriction of Hazardous Substances Directive requirements and are suitable for applications subject to environmental regulations.

Q: How do I select between multiple 100V substitutes with different current ratings? A: Selection should be based on the specific continuous drain current requirement of your application. If your design requires 80A at Tc, parts rated for 80A (STP100N10F7), 75A (PSMN009-100P,127), or 73A (IPP083N10N5AKSA1) are appropriate. For applications requiring higher current margin, parts rated for 97A (IRFB4410ZPBF), 100A (CSD19533KCS), 110A (STP120NF10), or 130A (IXFP130N10T) provide additional design headroom. Verify that thermal dissipation and PCB layout accommodate the selected part's power rating.

Q: What is the significance of on-resistance (Rds On) when selecting a substitute? A: On-resistance directly affects power dissipation and heat generation. Lower on-resistance (8.0 to 8.8 mOhm) reduces I²R losses and improves efficiency. The FDP3632 specifies 9.0 mOhm at 80A and 10V. Substitutes with lower on-resistance (STP100N10F7 at 8.0 mOhm, IPP083N10N5AKSA1 at 8.3 mOhm, PSMN009-100P,127 at 8.8 mOhm) offer improved thermal performance. Substitutes with higher on-resistance (CSD19533KCS and STP120NF10 at 10.5 mOhm) generate more heat and require adequate thermal management.

Q: Can I use a substitute part with higher gate charge (Qg) without circuit modification? A: Gate charge affects switching speed and gate drive requirements. The FDP3632 specifies 110 nC at 10V. Substitutes with higher gate charge (PSMN009-100P,127 at 156 nC, IRFB4410ZPBF at 120 nC, STP120NF10 at 233 nC) require longer switching times and may increase switching losses. Substitutes with lower gate charge (STP100N10F7 at 61 nC, CSD19533KCS at 35 nC, IPP083N10N5AKSA1 at 37 nC) improve switching performance. Verify that your gate drive circuit can supply the required gate current for the selected part's gate charge specification.

Q: Are all substitute parts available in the same TO-220-3 package? A: Yes. All recommended substitute parts are packaged in TO-220-3 or compatible through-hole form factors (TO-220, TO-220AB, PG-TO220-3). These packages are mechanically and electrically compatible with standard TO-220-3 PCB footprints. The FDH3632 exception uses TO-247-3, which requires a different PCB layout.

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