FDP3205 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDP3205 is an N-Channel MOSFET manufactured by onsemi, rated for 55V drain-to-source voltage with 100A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is part of the PowerTrench® series. The FDP3205 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain compatibility with existing circuit designs while meeting or exceeding the electrical and thermal performance requirements of the original specification.

Key Parameters

Parameter	FDP3205 Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	100	A (Tc)
On-Resistance (Rds On) @ Id, Vgs	7.5 mOhm @ 59A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5.5	V @ 250µA
Gate Charge (Qg) @ Vgs	120	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	7730	pF @ 25V
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the FDP3205 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must be equal to or greater than 55V to ensure safe operation under maximum voltage stress
Continuous Drain Current (Id): Must be equal to or greater than 100A (Tc) to support the required current-carrying capacity
Package Type: Must be TO-220-3 through-hole configuration for mechanical and thermal interface compatibility
FET Type: Must be N-Channel MOSFET with metal-oxide technology
Operating Temperature Range: Must support -55°C to 175°C (TJ) to maintain thermal compatibility
Gate Voltage (Vgs): Must support ±20V maximum gate voltage specification

Secondary Compatibility Parameters:

On-resistance (Rds On), gate charge (Qg), and input capacitance (Ciss) influence switching performance and thermal behavior but do not prevent substitution when primary parameters are met
Power dissipation capability should equal or exceed 150W (Tc) for thermal margin
Product status (Active vs. Obsolete) indicates availability and long-term supply reliability

Substitute parts are grouped into two categories: Direct Substitutes (matching all critical parameters) and Functional Equivalents (meeting electrical requirements with acceptable performance trade-offs).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs(th) (V)	Ciss (pF)	Power Diss. (W)	Package	Status
FDP3205	onsemi	55	100 (Tc)	7.5 @ 59A, 10V	120 @ 10V	5.5 @ 250µA	7730 @ 25V	150 (Tc)	TO-220-3	Obsolete
AOT2606L	Alpha & Omega Semiconductor	60	72 (Tc)	6.5 @ 20A, 10V	75 @ 10V	3.5 @ 250µA	4050 @ 30V	115 (Tc)	TO-220-3	Active
IRF4104PBF	Infineon Technologies	40	75 (Tc)	5.5 @ 75A, 10V	100 @ 10V	4 @ 250µA	3000 @ 25V	140 (Tc)	TO-220-3	Active
IRL1004PBF	Infineon Technologies	40	130 (Tc)	6.5 @ 78A, 10V	100 @ 4.5V	1 @ 250µA	5330 @ 25V	200 (Tc)	TO-220-3	Active
IXTP120N075T2	IXYS	75	120 (Tc)	7.7 @ 60A, 10V	78 @ 10V	4 @ 250µA	4740 @ 25V	250 (Tc)	TO-220-3	Active
PHP191NQ06LT,127	Nexperia USA Inc.	55	75 (Tc)	3.7 @ 25A, 10V	95.6 @ 5V	2 @ 1mA	7665 @ 25V	300 (Tc)	TO-220-3	Obsolete
PSMN8R0-40PS,127	Nexperia USA Inc.	40	77 (Tc)	7.6 @ 25A, 10V	21 @ 10V	4 @ 1mA	1262 @ 12V	86 (Tc)	TO-220-3	Obsolete
STP150NF55	STMicroelectronics	55	120 (Tc)	6 @ 60A, 10V	190 @ 10V	4 @ 250µA	4400 @ 25V	300 (Tc)	TO-220-3	Obsolete
STP80NF55-06	STMicroelectronics	55	80 (Tc)	6.5 @ 40A, 10V	189 @ 10V	4 @ 250µA	4400 @ 25V	300 (Tc)	TO-220-3	Active
STP95N4F3	STMicroelectronics	40	80 (Tc)	6.2 @ 40A, 10V	54 @ 10V	4 @ 250µA	2200 @ 25V	110 (Tc)	TO-220-3	Active
TK4R3E06PL,S1X	Toshiba Semiconductor and Storage	60	80 (Tc)	7.2 @ 15A, 4.5V	48.2 @ 10V	2.5 @ 500µA	3280 @ 30V	87 (Tc)	TO-220-3	Active

Engineering Selection Recommendations

Direct Substitutes (Matching Vdss = 55V and Id ≥ 100A):

The IXTP120N075T2 (IXYS) is the primary direct substitute for the FDP3205. This device matches the 55V voltage class requirement and exceeds the 100A continuous drain current specification with 120A (Tc) rating. The IXTP120N075T2 is classified as Active, ensuring long-term availability and supply chain stability. Power dissipation capability is 250W (Tc), providing thermal margin above the FDP3205's 150W rating. The device is RoHS3 compliant and carries REACH Unaffected status, meeting modern regulatory requirements.

The STP150NF55 (STMicroelectronics) also matches the 55V voltage class and exceeds current requirements with 120A (Tc) rating. However, this part is classified as Obsolete, limiting its suitability for new designs despite meeting electrical specifications.

Functional Equivalents (Vdss ≥ 55V or Id ≥ 100A with trade-offs):

The AOT2606L (Alpha & Omega Semiconductor) operates at 60V, exceeding the 55V requirement, but provides only 72A (Tc) continuous drain current, which is below the 100A specification. This part is Active and suitable for applications where current requirements can be reduced or where voltage margin is prioritized. Power dissipation is limited to 115W (Tc), below the FDP3205 rating.

The STP80NF55-06 (STMicroelectronics) matches the 55V voltage class and is classified as Active, ensuring availability. However, it provides only 80A (Tc) continuous drain current, below the 100A requirement. This part is suitable for applications with reduced current demands or where thermal performance (300W Tc) is critical.

Lower Voltage Alternatives (Vdss = 40V):

The IRF4104PBF, IRL1004PBF, PSMN8R0-40PS,127, and STP95N4F3 operate at 40V, which is below the FDP3205's 55V rating. These parts are not suitable as direct substitutes for applications requiring 55V voltage headroom. Use these alternatives only in circuits designed for 40V maximum operating voltage.

Compliance and Regulatory Status:

All Active substitute parts (IXTP120N075T2, STP80NF55-06, AOT2606L, TK4R3E06PL,S1X, IRF4104PBF, IRL1004PBF, STP95N4F3) are RoHS3 compliant and carry REACH Unaffected status, meeting current environmental and regulatory standards. Obsolete parts (PHP191NQ06LT,127, PSMN8R0-40PS,127, STP150NF55) should be avoided in new designs due to supply chain uncertainty.

Frequently Asked Questions (FAQ)

Q: Can the AOT2606L replace the FDP3205 in all applications?

A: The AOT2606L operates at 60V, exceeding the FDP3205's 55V rating, but provides only 72A (Tc) continuous drain current compared to the FDP3205's 100A specification. Substitution is possible only in applications where the actual drain current requirement is 72A or less. Power dissipation is also reduced to 115W (Tc) versus 150W (Tc) for the FDP3205. Verify circuit current demands before substitution.

Q: Why is the IXTP120N075T2 recommended as the primary substitute?

A: The IXTP120N075T2 matches the critical parameters of the FDP3205: 55V drain-to-source voltage, 120A continuous drain current (exceeding the 100A requirement), TO-220-3 package, and -55°C to 175°C operating temperature range. The device is classified as Active, ensuring long-term availability. Power dissipation of 250W (Tc) provides thermal margin. RoHS3 compliance and REACH Unaffected status meet modern regulatory requirements.

Q: Are 40V MOSFETs suitable substitutes for the FDP3205?

A: No. The IRF4104PBF, IRL1004PBF, PSMN8R0-40PS,127, and STP95N4F3 are rated for 40V maximum drain-to-source voltage, which is below the FDP3205's 55V specification. These parts are not suitable as direct substitutes. Use 40V alternatives only in circuits specifically designed for 40V maximum operating voltage.

Q: What is the significance of product status (Active vs. Obsolete)?

A: Active parts have confirmed long-term availability from manufacturers and distributors, ensuring supply chain continuity for production and maintenance. Obsolete parts have been discontinued and may have limited stock. For new designs, select Active parts. For legacy system maintenance, Obsolete parts may be acceptable if inventory is available, but long-term sourcing cannot be guaranteed.

Q: Can I use a substitute with lower continuous drain current if my circuit operates below 100A?

A: Yes, provided the actual operating current does not exceed the substitute part's rating. For example, the STP80NF55-06 (80A Tc) can replace the FDP3205 in applications where drain current remains below 80A. However, verify that thermal dissipation remains within acceptable limits, as lower current ratings often correlate with reduced power dissipation capability.

Q: What package compatibility considerations apply to these substitutes?

A: All listed substitute parts use the TO-220-3 through-hole package, matching the FDP3205's mechanical interface. This ensures compatibility with existing PCB layouts and thermal management solutions (heatsinks, mounting hardware). No package conversion is required for any of these substitutes.

Q: How do gate charge and input capacitance differences affect circuit performance?

A: Gate charge (Qg) and input capacitance (Ciss) influence gate drive circuit design and switching speed. The FDP3205 has 120 nC gate charge and 7730 pF input capacitance. Substitutes with lower values (e.g., IXTP120N075T2 with 78 nC and 4740 pF) may switch faster and require less gate drive power. Substitutes with higher values may require gate drive circuit adjustment. Verify gate drive circuit compatibility before substitution.

Q: Are there thermal performance differences between the FDP3205 and its substitutes?

A: Yes. The FDP3205 is rated for 150W (Tc) power dissipation. The IXTP120N075T2 provides 250W (Tc), offering thermal margin. The AOT2606L and TK4R3E06PL,S1X provide only 115W and 87W (Tc) respectively, reducing thermal capacity. Verify that actual power dissipation in your circuit does not exceed the substitute part's rating. Use thermal modeling or testing to confirm adequate heat dissipation.

Q: What is the impact of different Rds On (on-resistance) values?

A: On-resistance directly affects power dissipation and heat generation. The FDP3205 has 7.5 mOhm Rds On. Lower values (e.g., IRF4104PBF at 5.5 mOhm) reduce power loss and heat. Higher values (e.g., AOT2606L at 6.5 mOhm) increase power loss. In high-current applications, even small differences in Rds On can significantly impact thermal performance. Calculate power dissipation using P = I²R to verify thermal compatibility.

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