FDP2710-F085 N-Channel MOSFET 250V 4A Equivalent & Substitute Parts

Part Overview

The FDP2710-F085 is an N-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage and 4A continuous drain current in a Through Hole TO-220-3 package. This device is part of the PowerTrench® series and carries automotive-grade qualification (AEC-Q101). The product is currently obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Substitute parts must maintain compatibility across voltage ratings, package type, and thermal characteristics while accommodating higher current ratings available in active product lines.

Substiute Parts

FDP2710-F085

onsemiIn Stock: 350391FDP2710-F085 Datasheet

Current PartRFQ

IRFB4332PBF

Infineon TechnologiesIn Stock: 19791IRFB4332PBF Datasheet

SimilarRFQ

IXTP50N25T

IXYSIn Stock: 27505IXTP50N25T Datasheet

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IXTP76N25T

IXYSIn Stock: 896IXTP76N25T Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDP2710-F085 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal 250V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Package Type: Must be TO-220-3 or compatible TO-220 variant
• Mounting Type: Must be Through Hole
• Gate Threshold Voltage (Vgs(th)): Must be 5V @ specified test current
• Maximum Gate Voltage (Vgs): Must be ±30V
• RoHS Status: Must be ROHS3 Compliant

Allowable Variation Parameters:

• Continuous Drain Current (Id): Substitute parts may exceed the 4A rating of the main part, as higher current capability does not compromise circuit functionality
• Rds On (Max): Substitute parts with lower on-resistance values are acceptable
• Gate Charge (Qg): Substitute parts with different gate charge values are acceptable within the same voltage class
• Input Capacitance (Ciss): Substitute parts with different input capacitance values are acceptable
• Power Dissipation (Max): Substitute parts with equal or higher power dissipation ratings are acceptable
• Operating Temperature Range: Substitute parts with equal or wider temperature ranges are acceptable
• Product Status: Active substitute parts are preferred for obsolete main parts

All substitute parts listed maintain 250V Vdss rating, N-Channel configuration, MOSFET technology, TO-220-3 package compatibility, and automotive-grade compliance.

Parameter Comparison

Engineering Selection Recommendations

IXTP50N25T (IXYS) is suitable as a substitute for the FDP2710-F085 in applications where the 4A continuous drain current requirement can be satisfied by a 50A-rated device. This part maintains identical voltage ratings, package configuration, and operating temperature range. The IXTP50N25T is an active product with ROHS3 compliance and unlimited moisture sensitivity rating. Gate charge is lower at 78 nC compared to 101 nC, and input capacitance is reduced to 4000 pF, which may improve switching performance in gate-drive-limited circuits.

IXTP76N25T (IXYS) provides higher current capability at 76A continuous drain current while maintaining all critical electrical parameters. This part is active and ROHS3 compliant. Gate charge is 92 nC and input capacitance is 4500 pF. Power dissipation capability is increased to 460W. This device is suitable for applications requiring additional thermal margin or future design scaling.

IRFB4332PBF (Infineon) is an active substitute with 60A continuous drain current rating. This part maintains 250V Vdss and TO-220-3 package compatibility. Operating temperature range extends to 175°C maximum junction temperature, providing wider thermal operating margin compared to the main part. Gate charge is higher at 150 nC, and input capacitance is 5860 pF, which is comparable to the main part. Power dissipation is rated at 390W. ROHS3 compliance and unlimited moisture sensitivity are confirmed.

All three substitute parts are active products with current manufacturing support, eliminating obsolescence risk associated with the FDP2710-F085.

Frequently Asked Questions (FAQ)

Q: Can the IXTP50N25T, IXTP76N25T, or IRFB4332PBF be used as direct replacements for the FDP2710-F085 in existing designs?

A: Yes, all three substitute parts are electrically and mechanically compatible. They share identical 250V Vdss rating, N-Channel MOSFET configuration, TO-220-3 package type, and ±30V gate voltage rating. The higher continuous drain current ratings of the substitutes do not create compatibility issues; they provide additional current capacity beyond the 4A requirement of the main part.

Q: What is the primary difference between the IXYS and Infineon substitute options?

A: The IXYS parts (IXTP50N25T and IXTP76N25T) offer lower gate charge values (78 nC and 92 nC respectively) compared to the Infineon IRFB4332PBF (150 nC). Lower gate charge reduces switching losses and may improve efficiency in high-frequency applications. The Infineon part provides a wider operating temperature range (-40°C to 175°C versus -55°C to 150°C for IXYS parts).

Q: Are there any thermal considerations when substituting these parts?

A: All substitute parts maintain power dissipation ratings within 390W to 460W, comparable to the main part's 403W rating. Thermal performance depends on PCB layout, heatsinking, and ambient conditions rather than the device selection alone. The higher current ratings of substitute parts do not increase thermal dissipation if circuit current remains at 4A or below.

Q: Do all substitute parts meet automotive qualification requirements?

A: The FDP2710-F085 carries AEC-Q101 automotive qualification. The substitute parts listed are ROHS3 compliant and carry unlimited moisture sensitivity rating (MSL 1). Verification of specific automotive qualification status (AEC-Q101, AEC-Q200, or equivalent) should be confirmed with the respective manufacturers if automotive-grade certification is a design requirement.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The FDP2710-F085 has 101 nC gate charge. IXTP50N25T (78 nC) and IXTP76N25T (92 nC) require less gate charge, potentially reducing gate drive power requirements. IRFB4332PBF (150 nC) requires more gate charge. Existing gate drive circuits designed for the main part will function with substitute parts, though optimization may improve efficiency.

Q: Are there inventory or lead-time advantages to selecting one substitute over another?

A: Inventory levels at the time of procurement vary. IXTP50N25T shows 27,400 pieces in stock, IXTP76N25T shows 815 pieces, and IRFB4332PBF shows 19,727 pieces. Lead times and availability should be confirmed with authorized distributors for current procurement requirements.

Q: Can the FDP2710-F085 be used interchangeably with these substitutes in reverse applications?

A: The FDP2710-F085 is rated for 4A continuous drain current. Using it in place of higher-rated substitutes is not recommended for applications requiring sustained currents above 4A, as this would exceed the device's continuous current rating and create thermal stress.