FDP2570 Equivalent & Substitute Parts

Part Overview

The FDP2570 is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with 22A continuous drain current in a Through Hole TO-220-3 package. This device is classified as Obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and procurement needs. The FDP2570 belongs to the PowerTrench® series and is suitable for applications requiring moderate voltage and current switching capabilities.

Substiute Parts

FDP2570
onsemiIn Stock: 22991FDP2570 Datasheet
FDP2570
Current Part
IRFB4019PBF
Infineon TechnologiesIn Stock: 23695IRFB4019PBF Datasheet
IRFB4019PBF
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) @ 25°C 22 A
Rds On (Max) @ Id, Vgs 80 mOhm @ 11A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 56 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V
Input Capacitance (Ciss) @ Vds 1911 pF @ 75V
Power Dissipation (Max) 93 W
Operating Temperature Range -65 to 175 °C
Package Type TO-220-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDP2570 is based on electrical and mechanical parameter alignment within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Parameters:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 150V
  • Continuous Drain Current (Id): Must support the application's current requirements
  • Gate-Source Voltage (Vgs): Must accommodate ±20V maximum rating
  • On-State Resistance (Rds On): Must be compatible with thermal and efficiency requirements
  • Operating Temperature Range: Must cover the application's thermal envelope

Mechanical Parameters:

  • Package Type: TO-220-3 or TO-220AB (mechanically compatible through-hole packages)
  • Mounting Type: Through Hole configuration

The IRFB4019PBF from Infineon Technologies qualifies as a substitute based on matching Vdss (150V), compatible package configuration (TO-220AB), and overlapping operating temperature range. Current rating differences and on-state resistance variations must be evaluated against specific application requirements.

Parameter Comparison

Parameter FDP2570 (onsemi) IRFB4019PBF (Infineon) Unit
Drain to Source Voltage (Vdss) 150 150 V
Continuous Drain Current (Id) @ 25°C 22 (Ta) 17 (Tc) A
Rds On (Max) @ Vgs 10V 80 mOhm @ 11A 95 mOhm @ 10A mOhm
Gate Threshold Voltage (Vgs(th)) 4 @ 250µA 4.9 @ 50µA V
Gate Charge (Qg) @ 10V 56 20 nC
Maximum Gate Voltage (Vgs) ±20 ±20 V
Input Capacitance (Ciss) 1911 @ 75V 800 @ 50V pF
Power Dissipation (Max) 93 (Tc) 80 (Tc) W
Operating Temperature Range -65 to 175 -55 to 175 °C
Package Type TO-220-3 TO-220AB
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)

Engineering Selection Recommendations

FDP2570 (onsemi):

  • Product Status: Obsolete
  • Compliance: REACH Unaffected; ECCN EAR99
  • Moisture Sensitivity: MSL 1 (Unlimited)
  • Current Availability: 22,900 pcs in stock

The FDP2570 is classified as obsolete and should not be selected for new designs. Existing inventory may be available for legacy system support or repair applications.

IRFB4019PBF (Infineon Technologies):

  • Product Status: Active
  • Compliance: REACH Unaffected; ECCN EAR99; RoHS3 Compliant
  • Moisture Sensitivity: MSL 1 (Unlimited)
  • Current Availability: 23,666 pcs in stock

The IRFB4019PBF is an active product suitable for new designs and ongoing production. It meets RoHS3 compliance requirements and is recommended for applications where the 17A continuous drain current rating is sufficient. The lower gate charge (20 nC vs. 56 nC) and reduced input capacitance provide improved switching characteristics in gate-drive-limited applications.

Selection between these parts depends on application current requirements. The FDP2570's higher current rating (22A) and power dissipation (93W) are advantageous in high-current applications. The IRFB4019PBF's active status and RoHS3 compliance make it the preferred choice for new designs operating within its 17A rating.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4019PBF directly replace the FDP2570 in existing designs?

A: Direct replacement is possible if the application's continuous drain current requirement does not exceed 17A. The IRFB4019PBF is rated for 17A continuous drain current compared to the FDP2570's 22A rating. Both devices share the same 150V Vdss rating and ±20V gate voltage specification. Package compatibility exists between TO-220-3 and TO-220AB configurations for through-hole mounting. Thermal design must account for the IRFB4019PBF's lower maximum power dissipation (80W vs. 93W).

Q: What are the key electrical differences between these parts?

A: The FDP2570 provides higher continuous drain current (22A vs. 17A) and greater power dissipation capability (93W vs. 80W). The IRFB4019PBF exhibits lower on-state resistance (95 mOhm vs. 80 mOhm at comparable conditions), lower gate charge (20 nC vs. 56 nC), and reduced input capacitance (800 pF vs. 1911 pF). These differences affect switching speed, gate drive requirements, and thermal performance.

Q: Are the TO-220-3 and TO-220AB packages mechanically interchangeable?

A: Both packages are through-hole TO-220 variants with compatible pin configurations for standard PCB layouts. Pin spacing and mounting hole positions are identical. Mechanical interchangeability is confirmed for standard through-hole assembly processes.

Q: What is the operating temperature difference between these devices?

A: The FDP2570 operates from -65°C to 175°C, while the IRFB4019PBF operates from -55°C to 175°C. The FDP2570 provides 10°C additional low-temperature capability. For applications requiring operation below -55°C, the FDP2570 is required.

Q: Why is the IRFB4019PBF recommended for new designs?

A: The IRFB4019PBF holds Active product status, ensuring continued availability and manufacturer support. It meets RoHS3 compliance requirements, which is increasingly mandated in industrial and consumer applications. The FDP2570's Obsolete status indicates discontinued production and limited long-term availability.

Q: How do gate charge differences affect circuit design?

A: The IRFB4019PBF's lower gate charge (20 nC vs. 56 nC) requires less charge transfer from the gate driver, resulting in faster switching transitions and reduced gate drive power consumption. Applications with limited gate drive current capacity benefit from the IRFB4019PBF's lower gate charge specification.

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