FDP19N40 Equivalent & Substitute Parts

Part Overview

The FDP19N40 is an N-Channel MOSFET manufactured by onsemi, rated for 400V drain-to-source voltage with 19A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the UniFET™ series. The FDP19N40 carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	400	V
Continuous Drain Current (Id) @ 25°C	19	A
On-State Resistance (Rds On Max) @ Id, Vgs	240 mOhm @ 9.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	40	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	2115	pF @ 25V
Power Dissipation (Max)	215	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDP19N40 is determined by the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-220-3 (Through Hole)
Operating Temperature Range: -55°C to 150°C
Gate Voltage (Vgs Max): ±30V

Electrical Performance Parameters:

Drain to Source Voltage (Vdss): 400V minimum
Continuous Drain Current (Id): 19A minimum at 25°C
On-State Resistance (Rds On): 240 mOhm maximum at specified conditions
Gate Charge (Qg): 40 nC maximum at 10V
Input Capacitance (Ciss): 2115 pF maximum at 25V

Substitute parts must meet or exceed these specifications while maintaining identical package configuration and thermal operating range. Deviations in electrical parameters are acceptable only when the substitute provides equal or superior performance characteristics.

Parameter Comparison

Parameter	FDP19N40	NTP185N60S5H	IXFP26N50P3	SIHFB20N50K-E3
Manufacturer	onsemi	onsemi	IXYS	Vishay Siliconix
Drain to Source Voltage (Vdss)	400V	600V	500V	500V
Continuous Drain Current (Id) @ 25°C	19A	15A	26A	20A
Rds On (Max) @ Id, Vgs	240 mOhm @ 9.5A, 10V	185 mOhm @ 7.5A, 10V	230 mOhm @ 13A, 10V	250 mOhm @ 12A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5V @ 250µA	4.3V @ 1.4mA	5V @ 4mA	5V @ 250µA
Gate Charge (Qg Max) @ Vgs	40 nC @ 10V	25 nC @ 10V	42 nC @ 10V	110 nC @ 10V
Input Capacitance (Ciss Max) @ Vds	2115 pF @ 25V	1350 pF @ 400V	2220 pF @ 25V	2870 pF @ 25V
Power Dissipation (Max)	215W	116W	500W	280W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package Type	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

NTP185N60S5H (onsemi SuperFET® V): This substitute provides higher voltage rating (600V vs. 400V) and lower on-state resistance (185 mOhm vs. 240 mOhm). However, the continuous drain current is reduced to 15A, which falls below the FDP19N40 specification of 19A. The product status is "Not For New Designs," indicating limited long-term availability. This part is suitable for applications where voltage headroom is prioritized and current requirements do not exceed 15A. RoHS3 compliance and identical operating temperature range are maintained.

IXFP26N50P3 (IXYS HiPerFET™, Polar3™): This substitute exceeds FDP19N40 specifications across multiple parameters: 500V voltage rating, 26A continuous drain current, and 500W power dissipation. On-state resistance is comparable (230 mOhm vs. 240 mOhm). Gate charge is marginally higher (42 nC vs. 40 nC). The product carries Active status, ensuring ongoing availability and support. RoHS3 compliance and identical operating temperature range are maintained. This part is suitable for direct replacement in applications requiring equal or higher performance margins.

SIHFB20N50K-E3 (Vishay Siliconix): This substitute provides 500V voltage rating and 20A continuous drain current, closely matching the FDP19N40 current specification. On-state resistance is slightly higher (250 mOhm vs. 240 mOhm). Gate charge is significantly elevated (110 nC vs. 40 nC), which may impact switching speed in gate-drive-limited applications. The product carries Active status, ensuring availability. RoHS3 compliance and identical operating temperature range are maintained. This part is suitable for applications where voltage margin is required and gate charge sensitivity is not critical.

Frequently Asked Questions (FAQ)

Q: Can the NTP185N60S5H replace the FDP19N40 in all applications?

A: The NTP185N60S5H provides higher voltage rating and lower on-state resistance but delivers only 15A continuous drain current compared to the FDP19N40 specification of 19A. Substitution is valid only for applications where the maximum required drain current does not exceed 15A. The "Not For New Designs" status indicates this part should be considered for legacy system support only.

Q: What are the advantages of using IXFP26N50P3 as a substitute?

A: The IXFP26N50P3 exceeds FDP19N40 specifications in voltage rating (500V), continuous drain current (26A), and power dissipation (500W). On-state resistance remains comparable. Active product status ensures long-term availability. This part is suitable for applications requiring performance headroom or where higher current capacity is beneficial.

Q: Why does SIHFB20N50K-E3 have significantly higher gate charge?

A: The SIHFB20N50K-E3 exhibits gate charge of 110 nC at 10V, compared to 40 nC for the FDP19N40. This parameter is determined by the device's internal capacitance structure and is inherent to the part design. Higher gate charge requires proportionally higher gate drive current or longer switching times. Substitution is valid for applications where gate drive capability is not a limiting factor.

Q: Are all substitute parts compatible with the same PCB layout?

A: All substitute parts use the TO-220-3 Through Hole package configuration, maintaining identical pin spacing and mounting hole positions. PCB layout compatibility is assured. However, thermal management considerations may differ due to variations in power dissipation ratings. Verify that thermal design accommodates the substitute part's power dissipation characteristics.

Q: What is the significance of product status in selecting a substitute?

A: Product status indicates manufacturer support and long-term availability. The FDP19N40 is Obsolete, making substitution necessary. NTP185N60S5H is "Not For New Designs," indicating limited future support. IXFP26N50P3 and SIHFB20N50K-E3 carry Active status, ensuring ongoing manufacturing and technical support. For new designs, Active-status parts are preferred.

Q: Do all substitute parts meet the same compliance standards?

A: All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the FDP19N40 compliance profile. ECCN and HTSUS classifications are identical across all parts. Compliance requirements are satisfied for all listed substitutes.

Q: Can I use a substitute with higher voltage rating in a 400V application?

A: Yes. Substitutes with higher voltage ratings (500V or 600V) are electrically compatible with 400V applications. The higher voltage rating provides additional safety margin and does not degrade performance. However, verify that the substitute's other electrical parameters (current, resistance, capacitance) are acceptable for the specific application requirements.

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