FDP18N50 Equivalent & Substitute Parts

Part Overview

The FDP18N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 18A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the UniFET™ series. The component is currently in Active product status with 28,900 pieces in stock.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. The FDP18N50 operates within specific voltage, current, and thermal constraints that define the scope of compatible alternatives. Substitute devices must maintain compatibility across drain-to-source voltage ratings, package type, mounting configuration, and operating temperature range to ensure functional equivalence.

Substiute Parts

FDP18N50

onsemiIn Stock: 28917FDP18N50 Datasheet

Current PartRFQ

IXFP26N50P3

IXYSIn Stock: 1030IXFP26N50P3 Datasheet

SimilarRFQ

IXTP460P2

IXYSIn Stock: 3587IXTP460P2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the FDP18N50 is determined by strict alignment with the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 500V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Package/Case: Must be TO-220-3
• Mounting Type: Must be Through Hole
• Operating Temperature Range: Must span -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

• Drive Voltage (Max Rds On): Must be rated at 10V
• Gate Threshold Voltage Vgs(th): Must be compatible at specified gate current
• Maximum Gate Voltage (Vgs Max): Must be ±30V
• RoHS Status: Must be ROHS3 Compliant
• REACH Status: Must be REACH Unaffected

Substitute parts identified for the FDP18N50 meet all primary criteria. Variations in continuous drain current, on-resistance, gate charge, and power dissipation are permissible when the substitute device maintains or exceeds the electrical performance envelope of the main part within the specified operating conditions.

Parameter Comparison

Engineering Selection Recommendations

IXFP26N50P3 (IXYS)

The IXFP26N50P3 is a direct substitute for the FDP18N50 with enhanced electrical performance characteristics. This device maintains the 500V Vdss rating and TO-220-3 package configuration while providing 26A continuous drain current, exceeding the 18A specification of the main part. The on-resistance of 230mOhm at 13A, 10V is lower than the FDP18N50 specification, resulting in reduced power dissipation during operation. Maximum power dissipation is rated at 500W, providing significant thermal margin. The IXFP26N50P3 is part of the HiPerFET™ and Polar3™ series and maintains Active product status. This device is ROHS3 Compliant and REACH Unaffected. Current inventory is 933 pieces.

IXTP460P2 (IXYS)

The IXTP460P2 is a substitute for the FDP18N50 with 24A continuous drain current and 480W maximum power dissipation. This device meets all primary substitution criteria with 500V Vdss rating and TO-220-3 Through Hole packaging. On-resistance is specified at 270mOhm at 12A, 10V, providing comparable performance to the main part. Gate charge is 48nC at 10V, lower than the FDP18N50 specification. The IXTP460P2 is part of the PolarP2™ series and is ROHS3 Compliant and REACH Unaffected. Product status is Last Time Buy, indicating this device is in the final phase of availability. Current inventory is 3,552 pieces.

Frequently Asked Questions (FAQ)

Q: Can the IXFP26N50P3 be used as a direct replacement for the FDP18N50 in all applications?

A: The IXFP26N50P3 meets all primary substitution criteria: 500V Vdss, N-Channel MOSFET technology, TO-220-3 package, Through Hole mounting, and -55°C to 150°C operating temperature range. The higher continuous drain current (26A versus 18A) and lower on-resistance (230mOhm versus 265mOhm) represent performance enhancements. Direct replacement is supported by electrical and mechanical parameter alignment.

Q: What is the difference between the IXTP460P2 and IXFP26N50P3 substitutes?

A: Both devices are 500V N-Channel MOSFETs in TO-220-3 packages. The IXFP26N50P3 provides 26A continuous drain current with 230mOhm on-resistance and 500W power dissipation. The IXTP460P2 provides 24A continuous drain current with 270mOhm on-resistance and 480W power dissipation. The IXFP26N50P3 offers superior current handling and lower on-resistance. The IXTP460P2 is designated Last Time Buy status.

Q: Are there thermal considerations when substituting the FDP18N50?

A: The FDP18N50 is rated for 235W maximum power dissipation. Both substitute devices (IXFP26N50P3 at 500W and IXTP460P2 at 480W) provide higher thermal ratings. Thermal performance depends on circuit design, heat sinking, and operating conditions. All three devices operate across the same temperature range (-55°C to 150°C TJ).

Q: Do the substitute parts require different gate drive voltage?

A: All three devices are specified with 10V drive voltage for maximum on-resistance rating. Gate threshold voltage specifications vary slightly: FDP18N50 at 5V @ 250µA, IXFP26N50P3 at 5V @ 4mA, and IXTP460P2 at 4.5V @ 250µA. These variations are within normal MOSFET parameter tolerances and do not require gate drive circuit modifications.

Q: What is the significance of the Last Time Buy status for the IXTP460P2?

A: Last Time Buy status indicates the IXTP460P2 is in the final phase of manufacturer availability. While currently in stock (3,552 pieces), this device will not be manufactured beyond a specified date. For long-term production requirements, the IXFP26N50P3 (Active status) is the preferred substitute option.

Q: Are all substitute parts RoHS and REACH compliant?

A: Yes. The FDP18N50, IXFP26N50P3, and IXTP460P2 are all ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution.