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FDP16N50 N-Channel 500V 16A MOSFET Equivalent & Substitute Parts
Part Overview
The FDP16N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 16A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and belongs to the UniFET™ series. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.
The FDP16N50 is designed for high-voltage switching applications requiring moderate current handling and thermal management in a standard through-hole package. Substitution is driven by product lifecycle discontinuation and the need for functionally equivalent alternatives from active product lines.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 500 | V |
| Continuous Drain Current (Id) @ 25°C | 16 | A |
| On-State Resistance (Rds On) @ 8A, 10V | 380 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 5 | V |
| Gate Charge (Qg) @ 10V | 45 | nC |
| Power Dissipation (Max) | 200 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-220-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the FDP16N50 is based on the following critical electrical and mechanical parameters:
Primary Matching Criteria:
- Drain-to-Source Voltage (Vdss): 500V (exact match required)
- Continuous Drain Current (Id): 16A (exact match required)
- Package Type: TO-220-3 (exact match required)
- Mounting Type: Through Hole (exact match required)
- FET Type: N-Channel (exact match required)
- Technology: MOSFET Metal Oxide (exact match required)
Secondary Compatibility Parameters:
- Gate Threshold Voltage (Vgs(th)): Range 4V to 5.5V acceptable
- On-State Resistance (Rds On): 320mOhm to 400mOhm acceptable
- Gate Charge (Qg): 15nC to 92nC acceptable
- Power Dissipation: 70W minimum (FDP16N50 rated 200W)
- Operating Temperature: -55°C to 150°C (exact match required)
- Maximum Gate Voltage (Vgs): ±25V to ±30V acceptable
Substitute parts are grouped into two categories: direct equivalents with 16A rating and active product alternatives that meet the primary matching criteria while offering improved specifications or active product status.
Parameter Comparison
| Parameter | FDP16N50 | IXFP16N50P | IXFP16N50P3 | IXTP16N50P | IXTP450P2 | STP12N50M2 | STP14NK50Z | STP14NM50N | STP11NM50N |
|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | onsemi | IXYS | IXYS | IXYS | IXYS | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vdss (V) | 500 | 500 | 500 | 500 | 500 | 500 | 500 | 500 | 500 |
| Id @ 25°C (A) | 16 | 16 | 16 | 16 | 16 | 10 | 14 | 12 | 8.5 |
| Rds On @ 10V (mOhm) | 380 | 400 | 360 | 400 | 330 | 380 | 380 | 320 | 470 |
| Vgs(th) (V) | 5 | 5.5 | 5 | 5.5 | 4.5 | 4 | 4.5 | 4 | 4 |
| Qg @ 10V (nC) | 45 | 43 | 29 | 43 | 43 | 15 | 92 | 27 | 19 |
| Power Dissipation (W) | 200 | 300 | 330 | 300 | 300 | 85 | 150 | 90 | 70 |
| Operating Temp (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Active | Active | Obsolete |
| RoHS Status | REACH Unaffected | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Direct Equivalents (16A Rated, Active Status):
The IXFP16N50P, IXFP16N50P3, IXTP16N50P, and IXTP450P2 are direct electrical equivalents to the FDP16N50, all rated for 500V and 16A continuous drain current in TO-220-3 packaging. All four parts are currently in active production status and carry ROHS3 compliance certification.
IXFP16N50P3 offers the lowest on-state resistance (360mOhm) and lowest gate charge (29nC), resulting in improved switching efficiency and reduced thermal dissipation compared to the FDP16N50. Power dissipation rating of 330W exceeds the original 200W specification.
IXTP450P2 provides the lowest on-state resistance (330mOhm) among direct equivalents, with 300W power dissipation rating. This part is suitable for applications requiring minimal conduction losses.
IXFP16N50P and IXTP16N50P both provide 300W power dissipation with 400mOhm on-state resistance, representing conservative upgrades from the FDP16N50.
Alternative Substitutes (Lower Current Ratings):
For applications where 16A continuous current is not required, the following active-status alternatives are available:
STP14NK50Z (14A rated) provides 150W power dissipation with 380mOhm on-state resistance and is in active production with ROHS3 compliance.
STP14NM50N (12A rated) offers improved on-state resistance of 320mOhm with 90W power dissipation and active product status.
STP12N50M2 (10A rated) delivers 85W power dissipation with 380mOhm on-state resistance and active production status.
STP11NM50N (8.5A rated) is obsolete but available in inventory, rated for 70W power dissipation.
Selection between direct equivalents and lower-current alternatives depends on application current requirements. Direct equivalents maintain full 16A capability. Lower-current alternatives are suitable only for applications with reduced current demands.
Frequently Asked Questions (FAQ)
Q: Can the IXFP16N50P3 directly replace the FDP16N50 in existing designs?
A: Yes. The IXFP16N50P3 matches all critical parameters: 500V Vdss, 16A continuous drain current, TO-220-3 package, and -55°C to 150°C operating range. The part is pin-compatible and electrically equivalent. The improved specifications (lower Rds On, lower gate charge, higher power dissipation rating) provide performance enhancement without design modification.
Q: What is the difference between IXFP16N50P and IXFP16N50P3?
A: Both parts are 500V, 16A MOSFETs in TO-220-3 packaging. IXFP16N50P3 features lower on-state resistance (360mOhm vs. 400mOhm), significantly lower gate charge (29nC vs. 43nC), lower input capacitance (1515pF vs. 2250pF), and higher power dissipation rating (330W vs. 300W). IXFP16N50P3 is the improved variant and is preferred for new designs.
Q: Can I use STP14NK50Z as a substitute if my application only requires 14A?
A: Yes, if your application current requirement does not exceed 14A continuous at 25°C. The STP14NK50Z is rated for 500V Vdss, 14A continuous current, and is in active production with ROHS3 compliance. The 380mOhm on-state resistance and 150W power dissipation are suitable for reduced-current applications. Verify that your thermal design accommodates the lower power dissipation rating if the original design was marginal.
Q: Why are some substitute parts rated for lower current than the FDP16N50?
A: The FDP16N50 is obsolete. Lower-current alternatives from active product lines (STP12N50M2, STP14NK50Z, STP14NM50N) are provided as options for applications that do not require the full 16A rating. These parts maintain the 500V voltage rating and TO-220-3 package but with reduced current capacity. Direct 16A equivalents (IXFP16N50P, IXFP16N50P3, IXTP16N50P, IXTP450P2) are preferred if full 16A capability is required.
Q: Are all substitute parts ROHS3 compliant?
A: All active-status substitute parts (IXFP16N50P, IXFP16N50P3, IXTP16N50P, IXTP450P2, STP12N50M2, STP14NK50Z, STP14NM50N) carry ROHS3 compliance certification. The FDP16N50 is listed as REACH Unaffected. STP11NM50N is ROHS3 compliant but obsolete.
Q: What is the significance of gate charge (Qg) differences between substitutes?
A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (IXFP16N50P3 at 29nC) results in faster switching transitions and reduced gate drive power consumption compared to higher gate charge parts (STP14NK50Z at 92nC). For applications with fixed gate drive circuits, verify that the selected substitute's gate charge is compatible with existing driver specifications.
Q: Can I use IXTP450P2 in place of IXFP16N50P3?
A: Yes. Both parts are 500V, 16A MOSFETs in TO-220-3 packaging with active product status and ROHS3 compliance. IXTP450P2 has slightly lower on-state resistance (330mOhm vs. 360mOhm) but higher gate charge (43nC vs. 29nC) and higher input capacitance (2530pF vs. 1515pF). Selection depends on whether conduction loss or switching speed is the priority in your application.
Q: What inventory availability should I consider?
A: The FDP16N50 has 31,800 pieces in stock. Among direct equivalents, IXTP16N50P has 1,655 pieces, IXTP450P2 has 1,450 pieces, IXFP16N50P3 has 1,003 pieces, and IXFP16N50P has 1,200 pieces available. For lower-current alternatives, STP14NK50Z has 20,081 pieces, STP14NM50N has 5,953 pieces, and STP12N50M2 has 2,900 pieces in stock. Inventory levels should be verified with suppliers for current availability.
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