FDP15N65 N-Channel MOSFET 650V 15A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP15N65 is an N-Channel MOSFET manufactured by onsemi, rated for 650V drain-to-source voltage with 15A continuous drain current at 25°C. This device operates in the UniFET™ series and is housed in a TO-220-3 through-hole package. The part is classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220-3 package format.

Key Parameters

Parameter	FDP15N65 Value	Unit
Drain-to-Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	15	A
Power Dissipation (Max)	250	W
On-State Resistance (Rds On) @ 7.5A, 10V	440	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	63	nC
Input Capacitance (Ciss) @ 25V	3095	pF
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDP15N65 is determined by the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): The substitute must equal or exceed 650V to maintain voltage margin in the application circuit. Parts rated below 650V are not suitable.

Continuous Drain Current (Id): The substitute must support at least 15A continuous current at 25°C to handle the same load conditions. Parts with lower current ratings cannot replace the FDP15N65.

Power Dissipation: The substitute should maintain thermal performance within acceptable limits. The FDP15N65 dissipates 250W maximum; substitutes with significantly lower power ratings may introduce thermal stress.

On-State Resistance (Rds On): Lower Rds On values improve efficiency and reduce heat generation. The FDP15N65 specifies 440mOhm at 7.5A, 10V. Substitutes with comparable or lower Rds On are preferred.

Package Type: All substitutes must use TO-220-3 through-hole packaging to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters affect switching speed and gate drive requirements. Substitutes with similar or lower values maintain circuit performance.

Operating Temperature Range: The FDP15N65 operates from -55°C to 150°C. Substitutes must support this full range or the application's specific temperature requirements.

Parameter Comparison

Parameter	FDP15N65	STP13N65M2	STP15N65M5	STP16N65M2	SPP11N80C3XKSA1	STP11N60DM2	STP11NM60ND	STP13NM60N	IXTP8N70X2M
Manufacturer	onsemi	STMicroelectronics	STMicroelectronics	STMicroelectronics	Infineon Technologies	STMicroelectronics	STMicroelectronics	STMicroelectronics	IXYS
Vdss (V)	650	650	650	650	800	600	600	600	700
Id @ 25°C (A)	15	10	11	11	11	10	10	11	4
Power Dissipation (W)	250	110	125	110	156	110	90	90	32
Rds On @ 10V (mOhm)	440	430	340	360	450	420	450	360	550
Vgs(th) @ 250µA (V)	5	4	5	4	3.9	5	5	4	5
Qg @ 10V (nC)	63	17	22	19.5	85	16.5	30	30	12
Ciss (pF)	3095	590	810	718	1600	614	850	790	800
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	REACH Unaffected

Engineering Selection Recommendations

Primary Substitutes (Matched Voltage Rating - 650V):

STP13N65M2, STP15N65M5, and STP16N65M2 are all STMicroelectronics parts with 650V Vdss matching the FDP15N65. These parts are active products with ROHS3 compliance. STP15N65M5 offers the closest current capability at 11A and improved Rds On of 340mOhm, providing better thermal efficiency. STP16N65M2 provides 11A current with 360mOhm Rds On and full temperature range support (-55°C to 150°C). Both are suitable for applications where the 15A rating of the FDP15N65 can be accommodated by the 11A substitute rating, provided thermal and current margin analysis confirms adequacy.

Secondary Substitutes (Higher Voltage Rating - 700V to 800V):

SPP11N80C3XKSA1 (Infineon, 800V, 11A) and IXTP8N70X2M (IXYS, 700V, 4A) provide higher voltage margins but with trade-offs. SPP11N80C3XKSA1 maintains 11A current capability with 450mOhm Rds On and active product status with ROHS3 compliance. IXTP8N70X2M is limited to 4A continuous current and 32W power dissipation, making it unsuitable for applications requiring the full 15A capability of the FDP15N65.

Lower Voltage Alternatives (600V):

STP11N60DM2, STP11NM60ND, and STP13NM60N operate at 600V, which is 50V below the FDP15N65 rating. These parts are active and ROHS3 compliant but should only be selected when the application circuit can tolerate reduced voltage margin. STP13NM60N offers 11A current with improved 360mOhm Rds On and full temperature range support.

Compliance and Availability:

All substitute parts listed are active products with current manufacturing status, ensuring long-term availability. STMicroelectronics parts carry ROHS3 compliance. Infineon SPP11N80C3XKSA1 and IXYS IXTP8N70X2M are REACH Unaffected. Inventory levels are confirmed for all substitutes, supporting immediate procurement.

Frequently Asked Questions (FAQ)

Q: Can STP15N65M5 directly replace FDP15N65 in all applications?

A: STP15N65M5 matches the 650V voltage rating and provides 11A continuous current versus the FDP15N65's 15A. Direct replacement is possible only if the application circuit operates at or below 11A. Thermal analysis must confirm that 125W power dissipation is adequate for the intended duty cycle. Both parts support the full -55°C to 150°C temperature range and use TO-220-3 packaging.

Q: Why is IXTP8N70X2M listed as a substitute if it only provides 4A current?

A: IXTP8N70X2M is included in the substitute list based on the provided input data but is not recommended for direct replacement of FDP15N65 due to its 4A current rating, which is significantly below the 15A requirement. This part is suitable only for applications with substantially lower current demands.

Q: What is the impact of selecting a 600V part instead of 650V?

A: Selecting a 600V part such as STP11N60DM2 or STP13NM60N reduces the voltage safety margin by 50V. This is acceptable only if circuit analysis confirms that the maximum operating voltage remains below 600V under all conditions, including transient overvoltage events. The 650V rating of the FDP15N65 provides additional margin for voltage spikes and switching transients.

Q: Are all substitute parts ROHS3 compliant?

A: STMicroelectronics parts (STP series) are ROHS3 compliant. IXYS IXTP8N70X2M and Infineon SPP11N80C3XKSA1 are REACH Unaffected. Verify compliance requirements for your specific application and region before final selection.

Q: How does gate charge (Qg) affect circuit performance?

A: The FDP15N65 specifies 63nC gate charge at 10V. Substitute parts generally exhibit lower gate charge values (12nC to 30nC), which reduces gate drive power requirements and enables faster switching. Lower gate charge improves efficiency but requires verification that existing gate drive circuits can accommodate the different charge characteristics.

Q: Can I use SPP11N80C3XKSA1 in a 650V application?

A: Yes. SPP11N80C3XKSA1 is rated for 800V, which exceeds the 650V requirement and provides additional voltage margin. The 11A current rating is lower than the FDP15N65's 15A, so current capacity must be verified. The 450mOhm Rds On is comparable to the FDP15N65, and the part is active with ROHS3 compliance.

Q: What is the significance of input capacitance (Ciss) differences?

A: The FDP15N65 specifies 3095pF input capacitance at 25V, which is significantly higher than most substitutes (590pF to 1600pF). Lower input capacitance in substitute parts reduces gate drive current requirements and improves switching speed. Circuit simulation or testing may be required to confirm compatibility with existing gate drive circuits.

Q: Are there any thermal considerations when substituting parts?

A: The FDP15N65 dissipates 250W maximum. Substitute parts with lower power ratings (90W to 156W) require careful thermal management. Ensure that heatsink design and thermal interface materials accommodate the lower power dissipation rating. Parts with lower Rds On values (such as STP15N65M5 at 340mOhm) generate less heat for the same current, improving thermal performance.

Q: What is the difference between TO-220-3 and TO-220 Isolated Tab packaging?

A: TO-220-3 is the standard three-lead through-hole package with a common drain tab. TO-220 Isolated Tab (as specified for IXTP8N70X2M) features an electrically isolated tab, which may require different heatsink mounting considerations. Verify mechanical compatibility with existing PCB layouts and heatsink designs before selecting parts with isolated tab variants.

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