FDP15N50 Equivalent & Substitute Parts

Part Overview

The FDP15N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 15A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is designed for high-voltage switching applications requiring 300W power dissipation capability.

The FDP15N50 carries an Obsolete product status. Locating equivalent substitute components is necessary to maintain design continuity and ensure component availability for new production builds and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	15	A
Power Dissipation (Max)	300	W
Rds On (Max) @ Id, Vgs	380 mOhm @ 7.5A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	41	nC @ 10V
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel

Substitute Part Grouping Explanation

Substitute parts for the FDP15N50 are selected based on the following critical electrical and mechanical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Type: TO-220-3

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitutes must meet or exceed 15A at 25°C
Power Dissipation: Substitutes must support thermal requirements of the application
Rds On: Substitutes must maintain equivalent or superior on-resistance characteristics
Gate Charge (Qg): Substitutes may vary within acceptable switching speed tolerances
Operating Temperature Range: Substitutes must cover the required operating window

The identified substitute parts STP12N50M2 and STP14NK50Z satisfy the mandatory electrical and mechanical criteria while offering active product status and improved availability.

Parameter Comparison

Parameter	FDP15N50 (onsemi)	STP12N50M2 (STMicroelectronics)	STP14NK50Z (STMicroelectronics)
Drain to Source Voltage (Vdss)	500 V	500 V	500 V
Continuous Drain Current (Id) @ 25°C	15 A	10 A	14 A
Power Dissipation (Max)	300 W	85 W	150 W
Rds On (Max) @ Id, Vgs	380 mOhm @ 7.5A, 10V	380 mOhm @ 5A, 10V	380 mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10V	15 nC @ 10V	92 nC @ 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	4 V @ 250µA	4.5 V @ 100µA
Vgs (Max)	±30 V	±25 V	±30 V
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 25V	560 pF @ 100V	2000 pF @ 25V
Operating Temperature Range	-55 to 175 °C	-55 to 150 °C	-55 to 150 °C
Package Type	TO-220-3	TO-220	TO-220-3
FET Type	N-Channel	N-Channel	N-Channel
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

STP12N50M2 (STMicroelectronics): This substitute is suitable for applications where continuous drain current requirements do not exceed 10A. The device offers reduced power dissipation (85W) and lower gate charge (15 nC), resulting in faster switching characteristics. The STP12N50M2 carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. The maximum gate voltage is limited to ±25V compared to the FDP15N50's ±30V specification. This part is appropriate for lower-current switching applications within the 500V voltage class.

STP14NK50Z (STMicroelectronics): This substitute provides the closest current rating match at 14A continuous drain current, approaching the FDP15N50's 15A specification. The device supports 150W power dissipation, which is lower than the original 300W but suitable for many high-voltage switching applications. The STP14NK50Z carries Active product status and ROHS3 compliance. The gate charge specification is higher (92 nC) compared to the FDP15N50 (41 nC), resulting in slower switching characteristics. The maximum gate voltage matches the original specification at ±30V. This part is appropriate for applications requiring current ratings near 15A within the 500V voltage class.

Both substitute parts maintain the mandatory 500V Vdss rating, N-Channel configuration, and Through Hole TO-220 package format. Selection between these substitutes depends on specific application requirements for current capacity and power dissipation.

Frequently Asked Questions (FAQ)

Q: Can the STP12N50M2 directly replace the FDP15N50 in all applications?

A: The STP12N50M2 is suitable only for applications where the continuous drain current requirement does not exceed 10A. If the original design requires the full 15A capability of the FDP15N50, the STP12N50M2 is not appropriate. The STP14NK50Z is the preferred substitute for higher-current applications.

Q: What is the significance of the power dissipation difference between the FDP15N50 (300W) and the substitute parts?

A: Power dissipation capability is determined by thermal design and package characteristics. The FDP15N50 supports 300W dissipation, while the STP12N50M2 supports 85W and the STP14NK50Z supports 150W. Applications requiring thermal management at the original 300W level must evaluate whether the substitute's lower dissipation rating is compatible with the circuit's thermal requirements and duty cycle.

Q: Are the substitute parts pin-compatible with the FDP15N50?

A: Both substitute parts use the TO-220 package format with Through Hole mounting, which is mechanically compatible with the FDP15N50's TO-220-3 package. Pin configuration for N-Channel MOSFETs in TO-220 packages is standardized (Gate, Drain, Source), ensuring functional compatibility in circuit layouts designed for the original part.

Q: What is the impact of the gate charge difference on circuit performance?

A: The STP12N50M2 has a lower gate charge (15 nC) compared to the FDP15N50 (41 nC), enabling faster switching transitions and reduced gate drive power requirements. The STP14NK50Z has a higher gate charge (92 nC), resulting in slower switching transitions and increased gate drive power requirements. Gate drive circuits must be evaluated to ensure compatibility with the substitute part's gate charge specification.

Q: Why do the substitute parts have lower maximum operating temperatures?

A: The FDP15N50 supports operation to 175°C, while both substitute parts are rated to 150°C maximum junction temperature. Applications requiring operation above 150°C are not compatible with these substitutes. For applications operating within the 150°C limit, this specification difference does not impact compatibility.

Q: What is the significance of the Vgs (Max) difference between the FDP15N50 (±30V) and the STP12N50M2 (±25V)?

A: The maximum gate-source voltage specification defines the safe operating range for gate drive signals. The STP12N50M2's ±25V limit is lower than the FDP15N50's ±30V specification. Gate drive circuits must be designed to remain within the ±25V limit when using the STP12N50M2. The STP14NK50Z matches the original ±30V specification.

Q: Are the substitute parts available in the same packaging format?

A: Both substitute parts are supplied in Tube packaging, while the FDP15N50 packaging format is not specified in the provided data. Both substitutes use the TO-220 Through Hole package format, which is mechanically compatible with standard PCB layouts designed for TO-220 components.

Q: What compliance certifications apply to the substitute parts?

A: Both STP12N50M2 and STP14NK50Z carry ROHS3 compliance and REACH Unaffected status, matching the regulatory compliance profile of the FDP15N50. Both parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, consistent with the original part's export and tariff classification.

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