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FDP15N40 Equivalent & Substitute Parts
Part Overview
The FDP15N40 is an N-Channel MOSFET manufactured by onsemi, rated for 400V drain-to-source voltage with 15A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the UniFET™ series. The FDP15N40 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 400 | V |
| Current - Continuous Drain (Id) @ 25°C | 15 | A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 7.5A, 10V | — |
| Power Dissipation (Max) | 170 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the FDP15N40 is determined by the following critical parameters:
Electrical Compatibility Criteria:
- FET Type: N-Channel topology must be maintained
- Technology: MOSFET (Metal Oxide) construction required
- Drain to Source Voltage (Vdss): Substitute must equal or exceed 400V
- Current - Continuous Drain (Id) @ 25°C: Substitute must equal or exceed 15A
- Operating Temperature Range: Substitute must cover -55°C to 150°C minimum
- Gate Drive Voltage: Substitute must operate at 10V drive voltage
Mechanical Compatibility Criteria:
- Package / Case: TO-220-3 form factor required
- Mounting Type: Through Hole configuration required
The IXTP450P2 manufactured by IXYS meets all substitution criteria. This device maintains N-Channel MOSFET topology, exceeds the voltage rating (500V vs. 400V), meets or exceeds current requirements (16A vs. 15A), and is housed in the identical TO-220-3 Through Hole package. Both devices operate across the same temperature range and are driven at 10V.
Parameter Comparison
| Parameter | FDP15N40 (onsemi) | IXTP450P2 (IXYS) | Unit |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 400 | 500 | V |
| Current - Continuous Drain (Id) @ 25°C | 15 | 16 | A |
| Drive Voltage (Max Rds On) | 10 | 10 | V |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 7.5A, 10V | 330 mOhm @ 8A, 10V | — |
| Vgs(th) (Max) @ Id | 5 @ 250µA | 4.5 @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 36 @ 10V | 43 @ 10V | nC |
| Vgs (Max) | ±30 | ±30 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 @ 25V | 2530 @ 25V | pF |
| Power Dissipation (Max) | 170 | 300 | W |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C |
| Package / Case | TO-220-3 | TO-220-3 | — |
| Mounting Type | Through Hole | Through Hole | — |
| Product Status | Obsolete | Active | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
The IXTP450P2 is a direct substitute for the FDP15N40 based on the following factors:
Electrical Performance: The IXTP450P2 exceeds the FDP15N40 specifications in voltage rating (500V vs. 400V) and current capacity (16A vs. 15A). Both devices operate at identical gate drive voltage (10V) and share the same temperature operating range (-55°C to 150°C). The IXTP450P2 provides superior power dissipation capability (300W vs. 170W), offering enhanced thermal headroom in applications.
Mechanical Compatibility: Both devices utilize the TO-220-3 Through Hole package, ensuring direct pin compatibility and identical PCB footprint requirements.
Regulatory Compliance: Both the FDP15N40 and IXTP450P2 are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards.
Product Availability: The FDP15N40 is obsolete, while the IXTP450P2 maintains active product status with 1450 units in stock, ensuring procurement continuity and long-term availability.
Frequently Asked Questions (FAQ)
Q: Can the IXTP450P2 directly replace the FDP15N40 in existing designs?
A: Yes. The IXTP450P2 is electrically and mechanically compatible with the FDP15N40. Both devices are N-Channel MOSFETs in TO-220-3 packages with identical gate drive voltage requirements (10V) and operating temperature ranges (-55°C to 150°C). The IXTP450P2 exceeds the FDP15N40 in voltage and current ratings, making it suitable for direct substitution.
Q: What are the key differences between these two devices?
A: The primary differences are voltage rating (IXTP450P2: 500V vs. FDP15N40: 400V), continuous drain current (IXTP450P2: 16A vs. FDP15N40: 15A), power dissipation (IXTP450P2: 300W vs. FDP15N40: 170W), and product status (IXTP450P2: Active vs. FDP15N40: Obsolete). The IXTP450P2 also exhibits slightly higher on-resistance (330 mOhm vs. 300 mOhm) and input capacitance (2530 pF vs. 1750 pF).
Q: Are there any package or pinout differences?
A: No. Both devices use the TO-220-3 Through Hole package with identical pinout and mechanical dimensions, allowing direct PCB substitution without layout modifications.
Q: What is the impact of the higher voltage rating on circuit operation?
A: The IXTP450P2's higher voltage rating (500V) provides additional safety margin in applications designed for 400V operation. This does not negatively impact circuit performance and allows the device to operate in higher voltage applications if required.
Q: How do the on-resistance specifications compare?
A: The FDP15N40 has a maximum on-resistance of 300 mOhm at 7.5A and 10V gate voltage, while the IXTP450P2 has 330 mOhm at 8A and 10V gate voltage. The difference is minimal and within typical design tolerances for most applications.
Q: Is the IXTP450P2 available for immediate procurement?
A: Yes. The IXTP450P2 is an active product with 1450 units in stock, providing immediate availability compared to the obsolete FDP15N40.
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