FDP150N10A MOSFET N-Channel 100V 50A Equivalent & Substitute Parts

Part Overview

The FDP150N10A is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage and 50A continuous drain current in a Through Hole TO-220-3 package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The FDP150N10A operates across a temperature range of -55°C to 175°C and delivers 91W maximum power dissipation, suitable for power switching applications requiring moderate current handling in compact form factors.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	15	mOhm @ 50A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	21	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	1440	pF @ 50V
Power Dissipation (Max)	91	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDP150N10A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 100V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-220-3 or compatible Through Hole variant
Operating Temperature Range: -55°C to 175°C minimum
Gate Voltage (Vgs): ±20V maximum

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 50A
Drive Voltage: 10V
Gate Threshold Voltage (Vgs(th)): 4V maximum
Maximum Gate Voltage (Vgs): ±20V

Substitute parts are grouped into two categories:

Parametric Equivalent: Parts that match all primary and secondary parameters with identical electrical specifications and packaging.

Similar Parts: Parts that meet primary substitution criteria but may exceed specifications in current rating, power dissipation, gate charge, or input capacitance. These parts are electrically compatible but operate with different performance characteristics.

Parameter Comparison

Parameter	FDP150N10A	FDP150N10A-F102	IRFB4510PBF	PSMN7R0-100PS,127
Manufacturer	onsemi	onsemi	Infineon Technologies	Nexperia USA Inc.
Vdss (V)	100	100	100	100
Id @ 25°C (A)	50	50	62	100
Rds On (Max) (mOhm)	15 @ 50A, 10V	15 @ 50A, 10V	13.5 @ 37A, 10V	12 @ 15A, 10V
Vgs(th) (Max) (V)	4 @ 250µA	4 @ 250µA	4 @ 100µA	4 @ 1mA
Qg (Max) (nC)	21 @ 10V	21 @ 10V	87 @ 10V	125 @ 10V
Ciss (Max) (pF)	1440 @ 50V	1440 @ 50V	3180 @ 50V	6686 @ 50V
Power Dissipation (Max) (W)	91	91	140	269
Vgs (Max) (V)	±20	±20	±20	±20
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	Not specified
Package	TO-220-3	TO-220-3	TO-220AB	TO-220AB
Product Status	Obsolete	Active	Active	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDP150N10A-F102 (Parametric Equivalent)

The FDP150N10A-F102 is the direct parametric equivalent to the FDP150N10A. Both parts share identical electrical specifications: 100V Vdss, 50A continuous drain current, 15mOhm Rds On, 21nC gate charge, and 1440pF input capacitance. The FDP150N10A-F102 is manufactured by onsemi under the PowerTrench® series and is classified as Active product status. This part is ROHS3 Compliant and carries REACH Unaffected certification. The primary distinction is packaging format: FDP150N10A-F102 is supplied in Tube packaging, whereas the original FDP150N10A packaging is not specified. This part provides direct functional replacement with current manufacturing support and regulatory compliance.

IRFB4510PBF (Similar Part - Higher Current Rating)

The IRFB4510PBF is manufactured by Infineon Technologies under the HEXFET® series and meets the primary substitution criteria of 100V Vdss, N-Channel MOSFET technology, and TO-220AB package compatibility. This part exceeds the FDP150N10A specification with 62A continuous drain current versus 50A, and 140W power dissipation versus 91W. The IRFB4510PBF exhibits lower Rds On (13.5mOhm @ 37A, 10V) and higher gate charge (87nC @ 10V) and input capacitance (3180pF @ 50V) compared to the FDP150N10A. The IRFB4510PBF is Active product status, ROHS3 Compliant, and carries REACH Unaffected certification. This part is suitable for applications where increased current handling and power dissipation capability are beneficial or required.

PSMN7R0-100PS,127 (Similar Part - Maximum Current Rating)

The PSMN7R0-100PS,127 is manufactured by Nexperia USA Inc. and meets the primary substitution criteria of 100V Vdss, N-Channel MOSFET technology, and TO-220AB package compatibility. This part provides the highest current rating at 100A continuous drain current and 269W power dissipation, with the lowest Rds On specification (12mOhm @ 15A, 10V). The PSMN7R0-100PS,127 exhibits significantly higher gate charge (125nC @ 10V) and input capacitance (6686pF @ 50V). This part is classified as Obsolete product status but is ROHS3 Compliant and carries REACH Unaffected certification. Operating temperature range is not specified in available documentation. This part is suitable for high-current applications where maximum power handling is required, though long-term availability may be limited due to obsolete status.

Frequently Asked Questions (FAQ)

Q: Can FDP150N10A-F102 be used as a direct replacement for FDP150N10A?

A: Yes. The FDP150N10A-F102 is a parametric equivalent with identical electrical specifications across all key parameters: 100V Vdss, 50A continuous drain current, 15mOhm Rds On, 4V gate threshold voltage, 21nC gate charge, and 1440pF input capacitance. Both parts operate across -55°C to 175°C and use TO-220-3 packaging. The FDP150N10A-F102 is Active product status with current manufacturing support and ROHS3 compliance.

Q: What are the differences between FDP150N10A and IRFB4510PBF?

A: Both parts share 100V Vdss rating and N-Channel MOSFET technology in TO-220 package variants. The IRFB4510PBF provides higher continuous drain current (62A versus 50A), higher power dissipation (140W versus 91W), lower Rds On (13.5mOhm versus 15mOhm), but higher gate charge (87nC versus 21nC) and input capacitance (3180pF versus 1440pF). The IRFB4510PBF is manufactured by Infineon Technologies and is Active product status. These differences make the IRFB4510PBF suitable for applications requiring higher current or power handling.

Q: Can PSMN7R0-100PS,127 replace FDP150N10A in all applications?

A: The PSMN7R0-100PS,127 meets primary substitution criteria with 100V Vdss, N-Channel MOSFET technology, and TO-220AB package compatibility. However, this part significantly exceeds FDP150N10A specifications with 100A continuous drain current, 269W power dissipation, 12mOhm Rds On, 125nC gate charge, and 6686pF input capacitance. The higher gate charge and input capacitance may affect circuit switching characteristics and gate drive requirements. Operating temperature range is not specified. This part is classified as Obsolete. Substitution is suitable only for applications where higher current and power handling are required or beneficial.

Q: Are all substitute parts compatible with the same PCB layout and thermal management design?

A: All substitute parts use TO-220 package variants (TO-220-3 or TO-220AB), which are mechanically compatible for Through Hole mounting. However, thermal management design may require adjustment. The FDP150N10A-F102 has identical power dissipation (91W) and requires no thermal redesign. The IRFB4510PBF dissipates 140W and the PSMN7R0-100PS,127 dissipates 269W, potentially requiring enhanced heatsinking or thermal interface materials. Gate drive circuit design may also require adjustment due to differences in gate charge and input capacitance, particularly when substituting with IRFB4510PBF or PSMN7R0-100PS,127.

Q: What is the significance of product status (Active versus Obsolete) for these parts?

A: Product status indicates manufacturing and supply availability. FDP150N10A-F102 and IRFB4510PBF are Active, indicating current production and long-term availability from manufacturers. FDP150N10A and PSMN7R0-100PS,127 are Obsolete, indicating discontinued production. For new designs or long-term production requirements, Active parts (FDP150N10A-F102 or IRFB4510PBF) are preferred. Obsolete parts may have limited inventory and no future manufacturing support.

Q: Do all substitute parts meet the same regulatory and compliance standards?

A: FDP150N10A-F102, IRFB4510PBF, and PSMN7R0-100PS,127 are all ROHS3 Compliant and carry REACH Unaffected certification. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for FDP150N10A, IRFB4510PBF, and PSMN7R0-100PS,127. FDP150N10A-F102 lists MSL as Not Applicable. These compliance standards ensure suitability for regulated applications and international distribution.

Q: What gate drive voltage is required for all substitute parts?

A: All substitute parts specify Drive Voltage (Max Rds On) of 10V, indicating that gate drive circuits must supply 10V to achieve maximum Rds On specifications. All parts specify maximum gate voltage (Vgs) of ±20V. Gate threshold voltage (Vgs(th)) is 4V maximum for all parts, though measured at different drain currents (250µA for FDP150N10A and FDP150N10A-F102, 100µA for IRFB4510PBF, 1mA for PSMN7R0-100PS,127). Existing gate drive circuits designed for FDP150N10A are compatible with all substitute parts.

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