FDP12N50 Equivalent & Substitute Parts

Part Overview

The FDP12N50 is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 11.5A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the UniFET™ series. The FDP12N50 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	11.5	A
Rds On (Max) @ 6A, 10V	650	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	30	nC
Power Dissipation (Max)	165	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FDP12N50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must support the application current requirement
Package Type: Must be Through Hole TO-220-3 or compatible TO-220 variant
Operating Temperature Range: Must span -55°C to 150°C or higher
Gate Drive Voltage: Must operate at 10V drive voltage

Secondary Compatibility Factors:

Rds On (Max): Lower values indicate improved performance; higher values require thermal management verification
Gate Charge (Qg): Affects switching speed and driver requirements
Power Dissipation: Must accommodate thermal design constraints

Substitute parts are grouped into two categories:

Category A - Direct Substitutes (Equivalent or Superior Performance): Parts that meet or exceed all primary criteria with comparable or improved electrical characteristics. These include IXFP12N50P and IXTP12N50P.

Category B - Functional Substitutes (Reduced Current Rating): Parts that meet voltage and package requirements but with lower continuous drain current ratings. These include AOT9N50, IRF840LC, and STP8NM50N. These are suitable for applications where the full 11.5A rating is not required.

Parameter Comparison

Parameter	FDP12N50	IXFP12N50P	IXTP12N50P	AOT9N50	IRF840LC	STP8NM50N
Manufacturer	onsemi	IXYS	IXYS	Alpha & Omega Semiconductor Inc.	Vishay Siliconix	STMicroelectronics
Vdss (V)	500	500	500	500	500	500
Id @ 25°C (A)	11.5	12	12	9	8	5
Rds On (Max) @ 10V (mOhm)	650 @ 6A	500 @ 6A	500 @ 6A	850 @ 4.5A	850 @ 4.8A	790 @ 2.5A
Vgs(th) @ 250µA (V)	5	5.5	5.5	4.5	4	4
Gate Charge (Qg) @ 10V (nC)	30	29	29	28	39	14
Power Dissipation (Max) (W)	165	200	200	192	125	45
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Not For New Designs	Active	Active
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS non-compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Preferred):

IXFP12N50P and IXTP12N50P are the primary substitutes for the FDP12N50. Both devices are manufactured by IXYS and are classified as Active products. These parts provide 12A continuous drain current, exceeding the FDP12N50 specification of 11.5A. Both devices feature improved Rds On performance (500 mOhm versus 650 mOhm), lower gate charge (29 nC versus 30 nC), and higher power dissipation capability (200W versus 165W). Both are ROHS3 compliant and REACH unaffected. IXFP12N50P is part of the HiPerFET™ and Polar series, while IXTP12N50P is part of the Polar series. Inventory availability is 1200 units and 1310 units respectively.

For Current-Limited Applications:

AOT9N50 (Alpha & Omega Semiconductor Inc.) provides 9A continuous drain current with 500V Vdss rating. This device is suitable for applications requiring less than 11.5A. The part is classified as Not For New Designs but remains available with 3846 units in stock. Rds On is 850 mOhm at 4.5A, and power dissipation is 192W. ROHS3 compliance is confirmed.

IRF840LC (Vishay Siliconix) provides 8A continuous drain current with 500V Vdss rating. This device is classified as Active and has 4450 units in stock. However, IRF840LC is RoHS non-compliant, which may restrict use in regulated applications. Power dissipation is 125W, and Rds On is 850 mOhm at 4.8A.

STP8NM50N (STMicroelectronics) provides 5A continuous drain current with 500V Vdss rating. This device is classified as Active with 2000 units in stock. It features the lowest gate charge (14 nC) and lowest input capacitance (364 pF), making it suitable for high-frequency switching applications with reduced current requirements. ROHS3 compliance is confirmed.

Compliance Considerations:

For applications requiring RoHS3 compliance, IXFP12N50P, IXTP12N50P, AOT9N50, and STP8NM50N are suitable. IRF840LC does not meet RoHS requirements and should be avoided in regulated applications.

Frequently Asked Questions (FAQ)

Q: Can IXFP12N50P or IXTP12N50P be used as direct replacements for FDP12N50?

A: Yes. Both IXYS devices meet or exceed all primary electrical specifications: 500V Vdss, 12A continuous drain current (exceeding the 11.5A requirement), compatible TO-220-3 package, and -55°C to 150°C operating range. Both are Active products with ROHS3 compliance. Pin configuration and gate drive voltage requirements are identical.

Q: What is the difference between IXFP12N50P and IXTP12N50P?

A: Both devices share identical electrical specifications: 12A Id, 500V Vdss, 500 mOhm Rds On, 29 nC gate charge, and 200W power dissipation. The primary difference is series designation: IXFP12N50P belongs to the HiPerFET™ and Polar series, while IXTP12N50P belongs to the Polar series. Both are suitable for direct substitution.

Q: Can AOT9N50 replace FDP12N50 in all applications?

A: AOT9N50 is suitable only for applications where continuous drain current does not exceed 9A. The device meets the 500V Vdss requirement and operates across the -55°C to 150°C range. However, the part is classified as Not For New Designs, limiting its use in new product development. Rds On performance is lower (850 mOhm versus 650 mOhm), requiring thermal management consideration.

Q: Why is IRF840LC listed as a substitute if it is RoHS non-compliant?

A: IRF840LC is included for reference in applications where RoHS compliance is not required. The device meets the 500V Vdss and TO-220-3 package requirements with 8A continuous drain current. However, for regulated or environmentally sensitive applications, ROHS3-compliant alternatives (IXFP12N50P, IXTP12N50P, AOT9N50, or STP8NM50N) are recommended.

Q: Is STP8NM50N suitable for high-frequency switching applications?

A: STP8NM50N features the lowest gate charge (14 nC) and input capacitance (364 pF) among the listed substitutes, making it advantageous for high-frequency switching. However, the 5A continuous drain current rating is significantly lower than the FDP12N50 specification. This device is suitable only for applications with reduced current requirements and high switching frequency demands.

Q: What thermal considerations apply when substituting these devices?

A: Power dissipation ratings vary across substitutes: FDP12N50 (165W), IXFP12N50P and IXTP12N50P (200W), AOT9N50 (192W), IRF840LC (125W), and STP8NM50N (45W). Devices with lower power dissipation ratings require more efficient thermal management or reduced operating current. Rds On values also affect thermal performance; lower Rds On values reduce conduction losses.

Q: Are all substitute parts available in the same packaging format?

A: All listed substitutes use Through Hole mounting in TO-220-3 or compatible TO-220 package variants. Pin configuration is consistent across all devices, enabling direct PCB compatibility without layout modifications.

Q: Which substitute offers the best overall performance match to FDP12N50?

A: IXFP12N50P and IXTP12N50P provide the closest performance match, with superior specifications in continuous drain current (12A versus 11.5A), Rds On (500 mOhm versus 650 mOhm), and power dissipation (200W versus 165W). Both are Active products with ROHS3 compliance and immediate availability.

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