FDP083N15A N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDP083N15A is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with 83A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is part of the PowerTrench® series. The FDP083N15A is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and availability constraints.

Key Parameters

Parameter	FDP083N15A	Unit
Drain-to-Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	83	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	8.3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	84	nC
Power Dissipation (Max)	294	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitute parts for the FDP083N15A are classified based on electrical parameter compatibility within the following criteria:

Direct Equivalent (Identical Specifications): Parts maintaining all critical electrical parameters: Vdss = 150V, Id = 83A, Rds On ≈ 8.3mOhm, and operating temperature range -55°C to 175°C. These parts are functionally interchangeable with the main part.

Similar Substitutes (Compatible Specifications): Parts with Vdss ≥ 150V and Id ≥ 83A, allowing operation within the same circuit topology. These parts may exhibit variations in Rds On, gate charge, and power dissipation but remain electrically compatible for applications where the main part specifications are met or exceeded.

Key Parameters for Substitution Assessment:

Drain-to-Source Voltage (Vdss): Must be ≥ 150V
Continuous Drain Current (Id): Must be ≥ 83A
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Affects switching speed and drive requirements
Power Dissipation: Thermal management capability
Package Type: TO-220-3 or compatible through-hole configuration
Operating Temperature: Must support -55°C to 175°C range
Product Status: Active status preferred for long-term availability

Parameter Comparison

Parameter	FDP083N15A	FDP083N15A-F102	IPP111N15N3GXKSA1	IRF135B203	IRFB4115PBF	IXTP140N12T2	Unit
Manufacturer	onsemi	onsemi	Infineon	Infineon	Infineon	IXYS	—
Product Status	Obsolete	Active	Active	Active	Active	Active	—
Vdss	150	150	150	135	150	120	V
Id @ 25°C	83	83	83	129	104	140	A (Tc)
Rds On (Max)	8.3 @ 75A, 10V	8.3 @ 75A, 10V	11.1 @ 83A, 10V	8.4 @ 77A, 10V	11 @ 62A, 10V	10 @ 70A, 10V	mOhm
Vgs(th) @ Id	4 @ 250µA	4 @ 250µA	4 @ 160µA	4 @ 250µA	5 @ 250µA	4.5 @ 250µA	V
Qg @ 10V	84	84	55	270	120	174	nC
Power Dissipation (Max)	294	294	214	441	380	577	W (Tc)
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package	TO-220-3	TO-220-3	PG-TO220-3	PG-TO220-3	TO-220AB	TO-220-3	—
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FDP083N15A-F102 (onsemi): This part is the direct equivalent to the FDP083N15A, maintaining identical electrical specifications across all critical parameters. The FDP083N15A-F102 is classified as Active, ensuring long-term availability and supply chain continuity. This part is ROHS3 compliant and packaged in Tube format. Selection of this part eliminates all electrical compatibility concerns and is the primary recommendation for direct replacement.

IPP111N15N3GXKSA1 (Infineon OptiMOS™): This part meets the minimum electrical requirements with Vdss = 150V and Id = 83A. The gate charge is lower (55 nC versus 84 nC), resulting in faster switching characteristics. The on-state resistance is slightly higher (11.1 mOhm versus 8.3 mOhm), which may increase power dissipation in high-current applications. This part is Active and ROHS3 compliant. Selection is suitable for applications where switching speed is prioritized and thermal management is adequate.

IRF135B203 (Infineon StrongIRFET™): This part exceeds the minimum electrical requirements with Vdss = 135V and Id = 129A. The higher current rating provides design margin, but the lower voltage rating (135V versus 150V) restricts use to applications with maximum operating voltages below 135V. Gate charge is significantly higher (270 nC), requiring higher drive current. This part is Active and ROHS3 compliant. Selection is appropriate only for applications where the 135V rating is acceptable and higher current capacity is beneficial.

IRFB4115PBF (Infineon HEXFET®): This part meets the voltage requirement (Vdss = 150V) with higher current rating (Id = 104A). The on-state resistance is higher (11 mOhm versus 8.3 mOhm), and gate charge is elevated (120 nC), requiring higher drive current. The package is TO-220AB, which is mechanically compatible with TO-220-3 applications. This part is Active and ROHS3 compliant. Selection is suitable for applications where higher current capacity is needed and drive circuit capability is sufficient.

IXTP140N12T2 (IXYS TrenchT2™): This part has a lower voltage rating (Vdss = 120V) compared to the main part (150V), restricting its use to applications with maximum operating voltages below 120V. The current rating is significantly higher (Id = 140A), and power dissipation capability is superior (577W). Gate charge is elevated (174 nC). This part is Active and ROHS3 compliant. Selection is limited to applications where the 120V rating is acceptable and higher current capacity is required.

Frequently Asked Questions (FAQ)

Q: Can FDP083N15A-F102 be used as a direct replacement for FDP083N15A?

A: Yes. FDP083N15A-F102 is electrically identical to FDP083N15A, with matching Vdss (150V), Id (83A), Rds On (8.3 mOhm), and operating temperature range (-55°C to 175°C). The primary difference is product status: FDP083N15A-F102 is Active, ensuring continued availability. Both parts use TO-220-3 packaging and are mechanically interchangeable.

Q: What is the minimum voltage rating required for a substitute part?

A: The substitute part must have Vdss ≥ 150V to maintain electrical compatibility with the FDP083N15A. Parts with lower voltage ratings (such as IXTP140N12T2 at 120V) are restricted to applications where the circuit maximum voltage does not exceed the part's rating.

Q: What is the minimum current rating required for a substitute part?

A: The substitute part must have Id ≥ 83A to meet the continuous drain current requirement of the FDP083N15A. Parts with higher current ratings provide design margin but do not affect compatibility.

Q: How does gate charge affect part selection?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on and off. Higher gate charge requires higher drive current from the gate driver circuit. The FDP083N15A has Qg = 84 nC. Substitute parts with lower gate charge (such as IPP111N15N3GXKSA1 at 55 nC) enable faster switching; parts with higher gate charge require verification that the gate driver can supply sufficient current.

Q: Are TO-220-3 and TO-220AB packages interchangeable?

A: TO-220-3 and TO-220AB are mechanically compatible through-hole packages with identical pin configurations and thermal characteristics. Parts in either package can be used interchangeably in PCB layouts designed for TO-220 mounting.

Q: What does ROHS3 compliance mean for part selection?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting the use of specific hazardous materials. All active substitute parts listed are ROHS3 compliant, ensuring regulatory compliance for new designs and production.

Q: Can IPP111N15N3GXKSA1 be used in place of FDP083N15A?

A: IPP111N15N3GXKSA1 meets the minimum electrical requirements (Vdss = 150V, Id = 83A) and is electrically compatible. However, the on-state resistance is higher (11.1 mOhm versus 8.3 mOhm), which increases power dissipation. Gate charge is lower (55 nC), enabling faster switching. Verification of thermal management and gate driver capability is required before selection.

Q: Why is IRF135B203 not recommended as a primary substitute?

A: IRF135B203 has a lower voltage rating (Vdss = 135V) compared to the FDP083N15A (150V). This restricts its use to applications where the circuit maximum voltage does not exceed 135V. Additionally, gate charge is significantly higher (270 nC), requiring higher drive current. Selection is limited to applications where both constraints are acceptable.

Q: What is the significance of product status (Active versus Obsolete)?

A: Product status indicates supply chain availability and manufacturer support. Obsolete parts (such as FDP083N15A) have limited or no availability and may not receive design updates. Active parts (such as FDP083N15A-F102) are in current production, ensuring long-term availability and supply continuity for ongoing designs and production.

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