FDP040N06 N-Channel MOSFET 60V 120A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP040N06 is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 60V drain-to-source voltage and 120A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete product status. Substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades where the original part is no longer manufactured or stocked.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	120	A
Rds On (Max) @ 75A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	133	nC
Input Capacitance (Ciss) @ 25V	8235	pF
Power Dissipation (Max)	231	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FDP040N06 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 120A at 25°C
Gate Drive Voltage: Must support 10V operation
Package Type: TO-220-3 or compatible TO-220 variant
Operating Temperature Range: Must span -55°C to 175°C
FET Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Factors:

Rds On (Max): Lower values indicate improved performance; values at or below 4.5mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values below 160nC are preferred
Input Capacitance (Ciss): Lower values improve switching speed; values below 10000pF are acceptable
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into three categories based on electrical performance alignment with the FDP040N06:

Category A - Direct Electrical Equivalents: Parts matching or exceeding all primary criteria with comparable Rds On and gate charge characteristics.

Category B - Higher Current Capability: Parts exceeding 120A rating, suitable for applications requiring additional current margin.

Category C - Reduced Current Capability: Parts rated below 120A but meeting voltage and thermal requirements; suitable only where application current demands are lower than 120A.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Ciss @ Vds (pF)	Power Diss (W)	Package	Status
FDP040N06	onsemi	60	120	4.0	133	8235	231	TO-220-3	Obsolete
FDP030N06	onsemi	60	120	3.2	151	9815	231	TO-220-3	Active
CSD18532KCS	Texas Instruments	60	100	4.2	53	4680	250	TO-220-3	Active
IPP040N06N3GXKSA1	Infineon Technologies	60	90	4.0	98	11000	188	TO-220-3	Not For New Designs
IRF2805PBF	International Rectifier	55	75	4.7	230	5110	330	TO-220-3	Active
IRFB3306PBF	Infineon Technologies	60	120	4.2	120	4520	230	TO-220-3	Active
IXFP220N06T3	IXYS	60	220	4.0	136	8500	440	TO-220-3	Last Time Buy
IXFP230N075T2	IXYS	75	230	4.2	178	10500	480	TO-220-3	Active
IXTP140N055T2	IXYS	55	140	5.4	82	4760	250	TO-220-3	Active
IXTP200N055T2	IXYS	55	200	4.2	109	6800	360	TO-220-3	Active
PSMN3R0-60PS,127	Nexperia USA Inc.	60	100	3.0	130	8079	306	TO-220-3	Obsolete

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status, Full Electrical Compatibility):

FDP030N06 (onsemi, Active): This part is the direct successor to the FDP040N06 within the onsemi PowerTrench® series. It maintains identical voltage and current ratings (60V, 120A), operates across the same temperature range (-55°C to 175°C), and is packaged in TO-220-3. The FDP030N06 features improved Rds On performance (3.2mOhm vs. 4.0mOhm) and carries RoHS3 compliance certification. This part is in active production with 6111 units in stock, making it the preferred direct replacement.

IRFB3306PBF (Infineon Technologies, Active): This HEXFET® series device matches the FDP040N06 electrical specifications with 60V Vdss and 120A continuous drain current in TO-220-3 package. Operating temperature range is -55°C to 175°C. The IRFB3306PBF exhibits comparable Rds On (4.2mOhm) and lower gate charge (120nC), reducing switching losses. RoHS3 compliance and active production status support long-term availability. Inventory of 25100 units is available.

Alternative Substitutes (Active Status, Modified Electrical Characteristics):

CSD18532KCS (Texas Instruments, Active): This NexFET™ series device operates at 60V with 100A continuous drain current, representing a 17% reduction in current rating. The CSD18532KCS provides superior switching performance with significantly lower gate charge (53nC vs. 133nC) and reduced input capacitance (4680pF vs. 8235pF). This part is suitable for applications where the full 120A capability is not required and switching efficiency is prioritized. RoHS3 compliant with 17078 units in stock.

IXFP220N06T3 (IXYS, Last Time Buy): This HiperFET™ device exceeds the FDP040N06 specifications with 220A continuous drain current at 60V, providing significant current margin. Rds On and gate charge characteristics are comparable (4.0mOhm, 136nC). The part is in Last Time Buy status, indicating limited future availability. Use only for applications requiring the higher current capability and where long-term supply is not critical.

IXTP140N055T2 (IXYS, Active): This TrenchT2™ device operates at 55V (5V below FDP040N06 rating) with 140A continuous drain current. Suitable only for applications where the 60V rating margin is not required. Gate charge is lower (82nC), improving switching performance. Active production status with 21300 units in stock.

Not Recommended for New Designs:

IPP040N06N3GXKSA1 (Infineon Technologies, Not For New Designs): Although electrically similar, this OptiMOS™ device carries "Not For New Designs" status, indicating manufacturer discontinuation trajectory. Current rating is reduced to 90A. Avoid for new applications.

PSMN3R0-60PS,127 (Nexperia USA Inc., Obsolete): This part is obsolete, matching the status of the FDP040N06. Current rating is limited to 100A. Not suitable for new designs or long-term applications.

Frequently Asked Questions (FAQ)

Q: Can the FDP030N06 directly replace the FDP040N06 in all applications?

A: Yes, the FDP030N06 is a direct electrical equivalent. Both devices are rated for 60V and 120A continuous drain current in TO-220-3 package with identical operating temperature range (-55°C to 175°C). The FDP030N06 features improved Rds On performance (3.2mOhm vs. 4.0mOhm), resulting in lower power dissipation and improved efficiency. The FDP030N06 is in active production with RoHS3 compliance, making it the preferred replacement.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both designations refer to the same three-lead through-hole package format used for power MOSFETs. TO-220-3 and TO-220AB are functionally equivalent in terms of pin configuration and thermal characteristics. Parts listed with either designation are mechanically and electrically interchangeable in standard TO-220 footprints.

Q: Why do some substitute parts have lower current ratings than the FDP040N06?

A: Lower current ratings reflect different device designs optimized for specific performance characteristics. For example, the CSD18532KCS (100A) prioritizes switching speed and reduced gate charge over maximum current capacity. These parts are suitable only for applications where the actual current requirement is below the FDP040N06's 120A rating. Verify application current demands before selecting a lower-rated substitute.

Q: What does "Last Time Buy" status mean for the IXFP220N06T3?

A: Last Time Buy status indicates the manufacturer has announced end-of-life for the device. Existing inventory may be available for a limited period, but no new production is planned. Parts with this status should be used only when current inventory is confirmed available and long-term supply is not required. For new designs, select parts with Active status.

Q: Is the IRFB3306PBF compatible with the FDP040N06 in terms of gate drive requirements?

A: Yes, the IRFB3306PBF is fully compatible. Both devices operate with 10V gate drive voltage and have similar gate threshold voltages (4.0V vs. 4.5V). Gate charge is comparable (120nC vs. 133nC), requiring no changes to gate driver circuits. The IRFB3306PBF is suitable for direct substitution without circuit modifications.

Q: Can I use the IXFP230N075T2 (75V rated) in a 60V application?

A: Yes, the IXFP230N075T2 can be used in 60V applications. The 75V Vdss rating provides additional voltage margin above the 60V requirement. However, this device is rated for 230A continuous drain current, significantly exceeding the FDP040N06's 120A. Use this part only if the application requires the higher current capability. The higher voltage rating does not negatively impact 60V operation.

Q: What compliance certifications should I verify when selecting a substitute?

A: Verify RoHS3 compliance status for environmental regulatory requirements. Confirm REACH compliance status (all listed parts show REACH Unaffected). Check Moisture Sensitivity Level (MSL) for storage and handling requirements. The FDP030N06 and IRFB3306PBF both carry RoHS3 compliance, supporting modern manufacturing standards.

Q: Why is the CSD18532KCS gate charge (53nC) significantly lower than the FDP040N06 (133nC)?

A: Lower gate charge reflects advanced semiconductor process technology and optimized device design. The CSD18532KCS uses NexFET™ technology with reduced input capacitance (4680pF vs. 8235pF), enabling faster switching transitions and lower gate driver power consumption. This characteristic makes the CSD18532KCS preferable for high-frequency switching applications, though it is rated for 100A rather than 120A continuous current.

Q: Are there any thermal considerations when substituting the FDP040N06?

A: Yes, thermal performance varies among substitutes. The FDP030N06 maintains identical power dissipation (231W) with improved Rds On, resulting in lower junction temperatures at equivalent current levels. The IXFP220N06T3 has higher power dissipation (440W) due to higher current rating, requiring adequate heatsinking. Verify that thermal design accommodates the substitute device's power dissipation characteristics and operating temperature range (-55°C to 175°C for all listed parts).

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