FDP032N08-F102 Equivalent & Substitute Parts

Part Overview

The FDP032N08-F102 is an N-Channel MOSFET manufactured by onsemi, rated for 75V drain-to-source voltage and 120A continuous drain current in a Through Hole TO-220 package. This device is designed for high-current switching applications requiring robust thermal performance with a maximum power dissipation of 375W at the case temperature. The part is Active in product status and RoHS3 compliant.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or when specific performance characteristics align with application parameters. Substitution eligibility is determined by matching critical electrical specifications including voltage rating, current capacity, on-resistance characteristics, and thermal performance within defined operating ranges.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	75	V
Current - Continuous Drain (Id) @ 25°C	120	A (Tc)
Rds On (Max) @ Id, Vgs	3.2	mOhm @ 75A, 10V
Drive Voltage (Max Rds On)	10	V
Vgs(th) (Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	15160	pF @ 25V
Power Dissipation (Max)	375	W (Tc)
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FDP032N08-F102 are classified into two categories based on electrical parameter alignment:

Parametric Equivalent: Parts that match all critical electrical specifications within the same voltage and current class, enabling direct functional replacement without circuit modification.

Direct Manufacturer Equivalent: Parts from alternative manufacturers that meet or exceed the primary electrical specifications (Vdss, Id, Rds On, thermal performance) while maintaining compatible package form factors and operating characteristics.

Similar Performance Parts: Parts with modified voltage or current ratings that operate within acceptable application ranges but require engineering evaluation for specific use cases.

Substitution eligibility is determined by the following key parameters:

Drain-to-Source Voltage (Vdss) rating equal to or greater than 75V
Continuous Drain Current (Id) at or above 120A
On-Resistance (Rds On) at 10V gate drive voltage
Gate threshold voltage (Vgs(th)) compatibility
Operating temperature range encompassing -55°C to 175°C
Through Hole TO-220 package configuration
RoHS3 compliance status

Parameter Comparison

Parameter	FDP032N08-F102	FDP032N08	IRFB3077PBF	AOT266L	IXTP260N055T2
Manufacturer	onsemi	onsemi	Infineon Technologies	Alpha & Omega Semiconductor Inc.	IXYS
Vdss (V)	75	75	75	60	55
Id @ 25°C (A)	120	120	120	140 (Tc)	260
Rds On (Max) @ 10V (mOhm)	3.2 @ 75A	3.2 @ 75A	3.3 @ 75A	3.5 @ 20A	3.3 @ 50A
Vgs(th) (Max) @ 250µA (V)	4.5	4.5	4	3.2	4
Gate Charge (Qg) @ 10V (nC)	220	220	220	90	140
Ciss (Max) @ Vds (pF)	15160 @ 25V	15160 @ 25V	9400 @ 50V	5650 @ 30V	10800 @ 25V
Power Dissipation (Max) (W)	375	375	370	268 (Tc)	480
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDP032N08 (onsemi): This part is a parametric equivalent to the FDP032N08-F102, offering identical electrical specifications and thermal performance. Both parts are manufactured by onsemi, carry Active product status, and maintain RoHS3 compliance. The primary distinction is packaging format (Tube versus unspecified for the main part). This substitute provides direct functional replacement with no circuit modifications required.

IRFB3077PBF (Infineon Technologies): This HEXFET® series device from Infineon matches the 75V/120A rating class with equivalent on-resistance performance (3.3 mOhm @ 75A, 10V). The part maintains identical gate charge specification (220 nC @ 10V) and operating temperature range. Power dissipation is marginally lower at 370W versus 375W. The IRFB3077PBF is Active in product status and RoHS3 compliant. This part functions as a direct manufacturer equivalent with high inventory availability.

AOT266L (Alpha & Omega Semiconductor Inc.): This part operates at a reduced voltage rating of 60V with higher continuous drain current capability (140A at Tc). The on-resistance specification (3.5 mOhm @ 20A, 10V) is comparable to the main part. Gate charge is significantly lower at 90 nC @ 10V, indicating reduced switching losses. Power dissipation is reduced to 268W (Tc). This part is suitable for applications where the 60V voltage rating is acceptable and where lower gate charge is beneficial. Active product status and RoHS3 compliance are maintained.

IXTP260N055T2 (IXYS): This TrenchT2™ series device operates at 55V with substantially higher current capability (260A at Tc). On-resistance is 3.3 mOhm @ 50A, 10V. Gate charge is 140 nC @ 10V, and power dissipation reaches 480W (Tc). This part is applicable to applications requiring higher current handling at reduced voltage ratings. Active product status and RoHS3 compliance are confirmed.

All substitute parts maintain Through Hole TO-220-3 package compatibility, identical operating temperature ranges, and regulatory compliance status. Selection among these alternatives depends on specific application voltage and current requirements, thermal management capabilities, and switching frequency considerations.

Frequently Asked Questions (FAQ)

Q: Can FDP032N08 be used as a direct replacement for FDP032N08-F102?

A: Yes. FDP032N08 is a parametric equivalent with identical electrical specifications, thermal performance, and operating characteristics. Both parts are manufactured by onsemi and carry Active product status with RoHS3 compliance. The only distinction is packaging format.

Q: What are the key differences between IRFB3077PBF and the FDP032N08-F102?

A: Both parts share the same 75V/120A rating and 220 nC gate charge specification. The IRFB3077PBF has marginally higher on-resistance (3.3 mOhm versus 3.2 mOhm) and slightly lower power dissipation (370W versus 375W). The IRFB3077PBF is manufactured by Infineon and carries identical compliance certifications.

Q: Is AOT266L suitable for applications designed for the FDP032N08-F102?

A: AOT266L operates at a reduced voltage rating of 60V compared to the 75V specification of FDP032N08-F102. This part is suitable only for applications where the maximum voltage stress does not exceed 60V. The higher current capability (140A at Tc) and lower gate charge (90 nC) may provide benefits in specific switching applications.

Q: What is the primary advantage of IXTP260N055T2 over FDP032N08-F102?

A: IXTP260N055T2 provides significantly higher current capability at 260A (Tc) compared to 120A for the FDP032N08-F102. However, this part operates at a reduced voltage rating of 55V. Selection depends on application requirements for voltage and current ratings.

Q: Are all substitute parts compatible with the TO-220-3 package footprint?

A: Yes. All substitute parts listed are configured in Through Hole TO-220-3 package format, ensuring mechanical and thermal interface compatibility with existing PCB designs.

Q: Do all substitute parts meet RoHS3 compliance requirements?

A: Yes. All substitute parts carry RoHS3 Compliant status, maintaining regulatory compliance equivalent to the FDP032N08-F102.

Q: What is the significance of gate charge (Qg) differences among these parts?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (AOT266L at 90 nC, IXTP260N055T2 at 140 nC) reduces switching losses and driver power consumption compared to higher gate charge specifications (FDP032N08-F102 and IRFB3077PBF at 220 nC). Selection depends on switching frequency and driver circuit design.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Interchangeability in high-frequency applications depends on gate charge, input capacitance, and on-resistance characteristics. Parts with lower gate charge and capacitance may provide superior performance at elevated switching frequencies. Circuit validation is necessary to confirm performance equivalence for specific frequency ranges.

Q: What inventory considerations apply to these substitute parts?

A: FDP032N08 has 1794 Pcs in stock, IRFB3077PBF has 36409 Pcs, AOT266L has 2030 Pcs, and IXTP260N055T2 has 32800 Pcs available. Inventory levels may influence sourcing decisions for high-volume production requirements.

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