Request Quote
(Ships tomorrow)
FDN5630-G N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The FDN5630-G is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 1.7A continuous drain current at 25°C. This device is housed in a SOT-23-3 surface mount package and is designed for low-power switching applications requiring compact form factors.
The FDN5630-G carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 60 | V |
| Current - Continuous Drain (Id) @ 25°C | 1.7 | A (Ta) |
| Rds On (Max) @ Id, Vgs | 100 | mOhm @ 1.7A, 10V |
| Vgs(th) (Max) @ Id | 3 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 | nC @ 10V |
| Vgs (Max) | ±20 | V |
| Power Dissipation (Max) | 500 | mW (Ta) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | SOT-23-3 (TO-236-3, SC-59) | — |
Substitute Part Grouping Explanation
Substitution of the FDN5630-G is determined by electrical and mechanical parameter equivalence across the following criteria:
Electrical Parameters (Critical for Functional Compatibility):
- FET Type: N-Channel topology
- Drain to Source Voltage (Vdss): 60V rating
- Continuous Drain Current (Id): 1.7A at 25°C
- On-State Resistance (Rds On): 100 mOhm maximum at specified conditions
- Gate Threshold Voltage (Vgs(th)): 3V maximum
- Gate Charge (Qg): 10 nC maximum
- Maximum Gate Voltage (Vgs): ±20V
- Power Dissipation: 500 mW maximum
- Operating Temperature Range: -55°C to 150°C
Mechanical Parameters (Required for Physical Compatibility):
- Mounting Type: Surface Mount
- Package: SOT-23-3 (TO-236-3, SC-59)
The FDN5630 (without the "-G" suffix) meets all electrical and mechanical parameter requirements for direct substitution with the FDN5630-G. Both devices share identical electrical specifications and package configuration, enabling pin-compatible replacement in existing circuit designs.
Parameter Comparison
| Parameter | FDN5630-G (Main Part) | FDN5630 (Substitute) | Match Status |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Identical |
| FET Type | N-Channel | N-Channel | Identical |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Identical |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | Identical |
| Current - Continuous Drain (Id) @ 25°C | 1.7 A (Ta) | 1.7 A (Ta) | Identical |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.7A, 10V | 100 mOhm @ 1.7A, 10V | Identical |
| Vgs(th) (Max) @ Id | 3 V @ 250µA | 3 V @ 250µA | Identical |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10V | 10 nC @ 10V | Identical |
| Vgs (Max) | ±20 V | ±20 V | Identical |
| Power Dissipation (Max) | 500 mW (Ta) | 500 mW (Ta) | Identical |
| Operating Temperature Range | -55 to 150 °C (TJ) | -55 to 150 °C (TJ) | Identical |
| Mounting Type | Surface Mount | Surface Mount | Identical |
| Package / Case | SOT-23-3 | SOT-23-3 | Identical |
| Product Status | Obsolete | Active | Substitute is Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Identical |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Identical |
Engineering Selection Recommendations
Primary Substitute: FDN5630
The FDN5630 is the direct equivalent for the obsolete FDN5630-G. All electrical parameters, mechanical specifications, and package configurations are identical. The FDN5630 carries Active product status, ensuring ongoing availability and supply chain support.
Compliance and Certification:
- Both the FDN5630-G and FDN5630 are ROHS3 Compliant
- Both devices maintain Moisture Sensitivity Level 1 (Unlimited)
- The FDN5630 includes REACH Unaffected status and EAR99 ECCN classification, providing additional regulatory clarity for international applications
Availability Consideration: The FDN5630 maintains substantial inventory availability (62,400 pieces in stock) compared to the obsolete FDN5630-G (950 pieces). For new designs or production continuity, the FDN5630 is the appropriate selection.
Pin and Footprint Compatibility: Both devices utilize the SOT-23-3 package (TO-236-3, SC-59 designations). Existing PCB layouts and component placement files require no modification for substitution.
Frequently Asked Questions (FAQ)
Q: Can the FDN5630 directly replace the FDN5630-G in existing designs?
A: Yes. The FDN5630 is electrically and mechanically identical to the FDN5630-G. All electrical parameters, including voltage ratings, current ratings, on-state resistance, and thermal characteristics, are equivalent. The SOT-23-3 package footprint is identical, enabling direct PCB substitution without layout modifications.
Q: What is the difference between FDN5630-G and FDN5630?
A: The primary difference is product status. The FDN5630-G is Obsolete, while the FDN5630 is Active. The "-G" suffix on the FDN5630-G does not indicate a functional or electrical difference. Both devices share identical electrical specifications and packaging. The FDN5630 is the current production equivalent.
Q: Are there any input capacitance differences between these parts?
A: The FDN5630-G specifies Input Capacitance (Ciss) of 560 pF at 15V, while the FDN5630 specifies 400 pF at 15V. This difference does not affect substitution suitability for most applications. Input capacitance influences gate drive speed and switching characteristics. Applications with critical gate drive timing should evaluate this parameter against circuit requirements.
Q: What packaging options are available for the FDN5630?
A: The FDN5630 is supplied in Cut Tape (CT) and Digi-Reel® packaging formats. Both formats contain the same SOT-23-3 component. Selection between packaging formats depends on assembly process requirements and volume specifications.
Q: Are both parts RoHS compliant?
A: Yes. Both the FDN5630-G and FDN5630 are ROHS3 Compliant. Both devices maintain Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.
Q: Why should I transition from FDN5630-G to FDN5630?
A: The FDN5630-G is Obsolete and subject to discontinuation. The FDN5630 is the Active equivalent with confirmed long-term availability. Transitioning to the FDN5630 ensures supply chain continuity, eliminates obsolescence risk, and maintains access to current manufacturing batches and quality certifications.
Q: Is the FDN5630 suitable for new product designs?
A: Yes. The FDN5630 is the appropriate component selection for new designs requiring an N-Channel MOSFET with 60V rating, 1.7A continuous drain current, and SOT-23-3 packaging. Active product status ensures design support and long-term component availability.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts
