FDN361AN N-Channel MOSFET 30V 1.8A Equivalent & Substitute Parts

Part Overview

The FDN361AN is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 1.8A continuous drain current at 25°C. The device is housed in a SOT-23-3 surface mount package and dissipates a maximum of 500mW. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, gate threshold voltage, and on-resistance characteristics, while accommodating the same surface mount SOT-23-3 package footprint.

Key Parameters

Parameter	FDN361AN	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	1.8	A
Rds On (Max) @ Id, Vgs	100	mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4	nC @ 5V
Power Dissipation (Max)	500	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-23-3	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Mandatory Compatibility Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be SOT-23-3 (TO-236-3, SC-59)
FET Type: N-Channel MOSFET
Operating Temperature Range: Must support -55°C to 150°C
Gate Voltage Rating (Vgs Max): Must support ±20V

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): Substitute must support minimum 1.8A at 25°C
On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
Power Dissipation: Thermal capability must accommodate application requirements

The three substitute parts listed below meet the mandatory compatibility criteria and are electrically suitable for direct replacement in applications designed for the FDN361AN.

Parameter Comparison

Parameter	FDN361AN	NTR4503NT1G	ZXMN3A01FTA	PMV90ENER	Unit
Manufacturer	onsemi	onsemi	Diodes Incorporated	Nexperia USA Inc.	—
Product Status	Obsolete	Active	Active	Not For New Designs	—
Drain to Source Voltage (Vdss)	30	30	30	30	V
Continuous Drain Current (Id) @ 25°C	1.8	1.5	1.8	3.0	A
Rds On (Max) @ Vgs 10V	100 @ 1.8A	110 @ 2.5A	120 @ 2.5A	72 @ 3A	mOhm
Vgs(th) (Max) @ Id	3 @ 250µA	3 @ 250µA	1 @ 250µA	2.5 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	4 @ 5V	7 @ 10V	3.9 @ 10V	5.5 @ 10V	nC
Vgs (Max)	±20	±20	±20	±20	V
Power Dissipation (Max)	500	420	625	460	mW
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	SOT-23-3	SOT-23-3	SOT-23-3	TO-236AB	—
Input Capacitance (Ciss) (Max)	220 @ 15V	250 @ 24V	190 @ 25V	160 @ 15V	pF

Engineering Selection Recommendations

NTR4503NT1G (onsemi)

The NTR4503NT1G is an active product from onsemi with full RoHS3 compliance. It maintains the same 30V Vdss rating and SOT-23-3 package as the FDN361AN. The continuous drain current is rated at 1.5A, which is 0.3A lower than the original part. On-resistance is 110mOhm at 2.5A and 10V, compared to 100mOhm at 1.8A and 10V for the FDN361AN. This substitute is suitable for applications where the 1.5A current rating is sufficient. The higher gate charge (7nC vs. 4nC) may require gate drive circuit evaluation in high-frequency switching applications.

ZXMN3A01FTA (Diodes Incorporated)

The ZXMN3A01FTA is an active product from Diodes Incorporated with full RoHS3 compliance. It matches the FDN361AN in both 30V Vdss rating and 1.8A continuous drain current, with identical SOT-23-3 package. On-resistance is 120mOhm at 2.5A and 10V, representing a 20% increase compared to the original specification. The gate threshold voltage is significantly lower at 1V versus 3V, which may affect gate drive compatibility. Gate charge is 3.9nC at 10V, lower than the original 4nC at 5V. This part offers the closest current rating match to the FDN361AN.

PMV90ENER (Nexperia USA Inc.)

The PMV90ENER is classified as "Not For New Designs" and carries RoHS3 compliance. It provides the highest continuous drain current rating at 3A, with superior on-resistance of 72mOhm at 3A and 10V. The 30V Vdss rating and SOT-23-3 package footprint are compatible. Gate threshold voltage is 2.5V, and gate charge is 5.5nC at 10V. This part is suitable for applications requiring higher current capacity than the original FDN361AN, but its product status restricts use to legacy system support only.

Frequently Asked Questions (FAQ)

Q: Can the NTR4503NT1G replace the FDN361AN in all applications?

A: The NTR4503NT1G is electrically compatible with the FDN361AN for applications requiring continuous drain currents up to 1.5A. Applications designed for the full 1.8A rating of the FDN361AN require thermal and current margin analysis. Both parts share identical Vdss, package, and temperature range specifications.

Q: What is the primary difference between the ZXMN3A01FTA and the FDN361AN?

A: The ZXMN3A01FTA matches the FDN361AN in current rating (1.8A) and package type (SOT-23-3). The key differences are on-resistance (120mOhm vs. 100mOhm) and gate threshold voltage (1V vs. 3V). The lower threshold voltage may require verification of gate drive circuit compatibility.

Q: Why is the PMV90ENER marked "Not For New Designs"?

A: The PMV90ENER carries a "Not For New Designs" status from Nexperia, indicating it is available for legacy system support and maintenance only. New designs should prioritize active products such as the NTR4503NT1G or ZXMN3A01FTA.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The NTR4503NT1G, ZXMN3A01FTA, and PMV90ENER are all RoHS3 compliant. The original FDN361AN does not specify RoHS status in the provided data.

Q: Do the substitute parts fit the same PCB footprint as the FDN361AN?

A: Yes. All three substitute parts use the SOT-23-3 package (also designated TO-236-3 or SC-59), which shares an identical PCB footprint with the FDN361AN. No layout modifications are required.

Q: Which substitute part has the lowest on-resistance?

A: The PMV90ENER has the lowest on-resistance at 72mOhm (measured at 3A, 10V). The FDN361AN specifies 100mOhm at 1.8A and 10V. Lower on-resistance reduces power dissipation and heat generation in switching applications.

Q: Can I use the PMV90ENER in a new product design?

A: No. The PMV90ENER is designated "Not For New Designs" and should be used only for legacy system maintenance and repair. The NTR4503NT1G or ZXMN3A01FTA are recommended for new designs.

Q: What is the impact of different gate threshold voltages on circuit performance?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate-to-source voltage required to turn the transistor on. The FDN361AN specifies 3V, the ZXMN3A01FTA specifies 1V, and the PMV90ENER specifies 2.5V. Lower threshold voltages allow operation with lower gate drive voltages. Existing gate drive circuits designed for 3V threshold may operate the ZXMN3A01FTA in a different region of its transfer characteristic, requiring verification of switching speed and power dissipation.

Q: How do gate charge differences affect switching frequency capability?

A: Gate charge (Qg) represents the total charge required to switch the transistor. The FDN361AN specifies 4nC at 5V, while substitutes range from 3.9nC to 7nC. Higher gate charge requires more drive current or longer switching times. In high-frequency applications, gate charge differences may impact switching losses and thermal performance. Circuit simulation or bench testing is appropriate when switching frequency exceeds 1MHz.

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