FDN358P Equivalent & Substitute Parts

Part Overview

The FDN358P is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 1.5A continuous drain current at 25°C. The device is housed in a SOT-23-3 surface mount package and dissipates 500mW maximum power. This part is classified as Active product status and complies with RoHS3 and REACH regulations.

Substitute parts are necessary when the FDN358P becomes unavailable, when alternative packaging formats are required, or when design specifications allow for enhanced performance characteristics such as higher current ratings or improved on-resistance values while maintaining core electrical compatibility within the 30V P-Channel MOSFET category.

Substiute Parts

FDN358P
onsemiIn Stock: 125207FDN358P Datasheet
FDN358P
Current Part
AO3403
Alpha & Omega Semiconductor Inc.In Stock: 325871AO3403 Datasheet
AO3403
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AO3409
Alpha & Omega Semiconductor Inc.In Stock: 200233AO3409 Datasheet
AO3409
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BSS315PH6327XTSA1
Infineon TechnologiesIn Stock: 6424BSS315PH6327XTSA1 Datasheet
BSS315PH6327XTSA1
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DMP3160L-7
Diodes IncorporatedIn Stock: 95411DMP3160L-7 Datasheet
DMP3160L-7
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PJA3409-AU_R1_000A1
Panjit International Inc.In Stock: 2067PJA3409-AU_R1_000A1 Datasheet
PJA3409-AU_R1_000A1
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PMV35EPER
Nexperia USA Inc.In Stock: 6904PMV35EPER Datasheet
PMV35EPER
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PMV50EPEAR
Nexperia USA Inc.In Stock: 23512PMV50EPEAR Datasheet
PMV50EPEAR
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RSR025P03TL
Rohm SemiconductorIn Stock: 16030RSR025P03TL Datasheet
RSR025P03TL
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.5 A
Rds On (Max) @ Id, Vgs 125 mOhm @ 1.5A, 10V
Power Dissipation (Max) 500 mW
Operating Temperature Range -55 to 150 °C
Package Type SOT-23-3
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the FDN358P is determined by the following core parameters:

Mandatory Compatibility Criteria:

  • FET Type: P-Channel
  • Drain to Source Voltage (Vdss): 30V minimum
  • Package/Mounting: Surface Mount SOT-23-3 or equivalent footprint
  • Operating Temperature Range: -55°C to 150°C minimum
  • Technology: MOSFET (Metal Oxide)

Performance Flexibility Parameters:

  • Current - Continuous Drain (Id): Equal to or greater than 1.5A
  • Rds On (Max): Equal to or less than 125 mOhm @ 10V (lower values indicate improved performance)
  • Power Dissipation: Equal to or greater than 500mW
  • Gate Charge (Qg): Lower values preferred for faster switching
  • Input Capacitance (Ciss): Lower values preferred for reduced gate drive requirements

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents: Parts with identical or superior electrical specifications and Active product status (BSS315PH6327XTSA1, DMP3160L-7, PJA3409-AU_R1_000A1, PMV35EPER, PMV50EPEAR).

Category B - Functional Alternatives: Parts with enhanced current ratings or improved on-resistance that maintain 30V Vdss and SOT-23-3 packaging but may have Not For New Designs status (AO3403, AO3409, RSR025P03TL).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max @ 10V (mOhm) Power Dissipation (mW) Vgs Max (±V) Package Product Status
FDN358P onsemi 30 1.5 125 500 20 SOT-23-3 Active
AO3403 Alpha & Omega Semiconductor Inc. 30 2.6 115 1400 12 SOT-23-3 Not For New Designs
AO3409 Alpha & Omega Semiconductor Inc. 30 2.6 130 1400 20 SOT-23-3 Not For New Designs
BSS315PH6327XTSA1 Infineon Technologies 30 1.5 150 500 20 SOT-23-3 Active
DMP3160L-7 Diodes Incorporated 30 2.7 122 1080 20 SOT-23-3 Active
PJA3409-AU_R1_000A1 Panjit International Inc. 30 2.9 110 1250 20 SOT-23-3 Active
PMV35EPER Nexperia USA Inc. 30 5.3 45 480 20 TO-236AB Active
PMV50EPEAR Nexperia USA Inc. 30 4.2 45 310 20 TO-236AB Active
RSR025P03TL Rohm Semiconductor 30 2.5 98 1000 20 TSMT3 Not For New Designs

Engineering Selection Recommendations

For Active Product Status Designs:

Use BSS315PH6327XTSA1 (Infineon Technologies) when direct electrical equivalence is required. This part maintains identical 1.5A current rating and 500mW power dissipation as the FDN358P while offering Active product status and OptiMOS™ series technology. Rds On is slightly higher at 150 mOhm versus 125 mOhm, representing a 20% increase in on-resistance.

Use DMP3160L-7 (Diodes Incorporated) when higher current capacity is acceptable. This part provides 2.7A continuous drain current with improved on-resistance of 122 mOhm and Active product status. Power dissipation increases to 1080mW, requiring thermal management verification in power-limited applications.

Use PJA3409-AU_R1_000A1 (Panjit International Inc.) for automotive-grade applications. This part carries AEC-Q101 qualification, 2.9A current rating, and 110 mOhm on-resistance. Active product status and ±20V Vgs rating match FDN358P specifications.

Use PMV35EPER or PMV50EPEAR (Nexperia USA Inc.) when significantly enhanced current handling is required. PMV35EPER provides 5.3A at 45 mOhm on-resistance. PMV50EPEAR provides 4.2A with AEC-Q100 automotive qualification. Both maintain Active status and 30V Vdss rating.

For Legacy or Cost-Optimized Designs:

AO3403 and AO3409 (Alpha & Omega Semiconductor Inc.) are available as functional alternatives with higher current ratings (2.6A) and improved on-resistance (115–130 mOhm). Both carry Not For New Designs status and should not be selected for new product development.

RSR025P03TL (Rohm Semiconductor) offers 2.5A current and 98 mOhm on-resistance but carries Not For New Designs status and uses non-standard TSMT3 packaging, limiting footprint compatibility.

Frequently Asked Questions (FAQ)

Q: Can AO3403 or AO3409 be used as direct replacements for FDN358P?

A: AO3403 and AO3409 are electrically compatible in terms of Vdss (30V) and package (SOT-23-3). However, both carry Not For New Designs status. AO3403 has lower Vgs Max (±12V versus ±20V), which may restrict gate drive flexibility. AO3409 matches the ±20V Vgs rating. Both provide higher current capacity (2.6A) and improved on-resistance, making them suitable for existing designs requiring component substitution but not recommended for new product development.

Q: What is the primary difference between BSS315PH6327XTSA1 and FDN358P?

A: Both parts share identical electrical ratings: 30V Vdss, 1.5A continuous drain current, 500mW power dissipation, and SOT-23-3 packaging. The primary difference is manufacturer (Infineon versus onsemi) and series designation (OptiMOS™ versus PowerTrench®). BSS315PH6327XTSA1 has slightly higher on-resistance (150 mOhm versus 125 mOhm) and lower gate charge (2.3 nC versus 5.6 nC), indicating faster switching characteristics. Both maintain Active product status.

Q: Are PMV35EPER and PMV50EPEAR compatible with FDN358P footprints?

A: Yes. Both Nexperia parts use TO-236AB packaging, which is mechanically and electrically compatible with SOT-23-3 footprints. However, these parts provide significantly higher current capacity (5.3A and 4.2A respectively) and substantially lower on-resistance (45 mOhm). They are suitable for applications where the FDN358P current rating is insufficient. PMV50EPEAR includes AEC-Q100 automotive qualification.

Q: Why does DMP3160L-7 have higher power dissipation than FDN358P despite lower on-resistance?

A: DMP3160L-7 is rated for 2.7A continuous drain current versus 1.5A for FDN358P. Power dissipation is calculated as I²R. At 2.7A with 122 mOhm on-resistance, dissipation reaches 1080mW. At 1.5A with 125 mOhm, FDN358P dissipates 281mW. The higher current rating of DMP3160L-7 results in greater absolute power dissipation despite superior on-resistance characteristics.

Q: Can RSR025P03TL replace FDN358P in existing PCB designs?

A: RSR025P03TL is electrically compatible (30V Vdss, 2.5A current, SOT-23-3 equivalent) but uses TSMT3 packaging (SC-96 case), which differs from standard SOT-23-3 pinout and footprint. Physical substitution on existing PCBs is not possible without layout modification. Additionally, RSR025P03TL carries Not For New Designs status.

Q: What is the significance of AEC-Q101 and AEC-Q100 qualifications on substitute parts?

A: AEC-Q101 (PJA3409-AU_R1_000A1) and AEC-Q100 (PMV50EPEAR) indicate automotive-grade qualification. These certifications confirm compliance with automotive reliability and quality standards. Parts without these qualifications are suitable for industrial and consumer applications but should not be used in automotive designs requiring AEC qualification.

Q: Is Vgs Max (±12V versus ±20V) a critical difference between AO3403 and FDN358P?

A: Vgs Max defines the maximum gate-to-source voltage the device can withstand. AO3403 is rated ±12V while FDN358P is rated ±20V. In applications using gate drive voltages exceeding ±12V, AO3403 cannot be substituted. FDN358P's higher rating provides greater design margin and compatibility with higher gate drive circuits.

Q: Which substitute part offers the best on-resistance performance?

A: PMV35EPER and PMV50EPEAR both provide 45 mOhm on-resistance at 10V gate voltage, representing a 64% improvement over FDN358P's 125 mOhm. PJA3409-AU_R1_000A1 offers 110 mOhm (12% improvement). These lower on-resistance values reduce power dissipation and heat generation in switching applications.

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