FDMS9600S MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS9600S is a dual N-channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 12A continuous drain current at 25°C. This device is configured as a 2N-channel array in an 8-MLP (5x6) Power56 surface mount package and features logic level gate operation. The FDMS9600S is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

FDMS9600S
onsemiIn Stock: 27593FDMS9600S Datasheet
FDMS9600S
Current Part
CSD16404Q5A
Texas InstrumentsIn Stock: 30551CSD16404Q5A Datasheet
CSD16404Q5A
Similar
CSD16410Q5A
Texas InstrumentsIn Stock: 21165CSD16410Q5A Datasheet
CSD16410Q5A
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12, 16 A
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1705 pF @ 15V
Power - Max 1 W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN (5x6)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDMS9600S are identified based on the following critical parameters that determine functional compatibility:

Voltage Rating Compatibility: The FDMS9600S operates at 30V Vdss. Substitute parts must support the same or higher voltage rating to ensure safe operation in the intended circuit.

Current Handling Capability: The FDMS9600S provides 12A continuous drain current at 25°C. Substitute parts must meet or exceed this current specification to maintain equivalent performance.

On-Resistance (Rds On): The FDMS9600S specifies 8.5mOhm maximum at 12A, 10V gate-source voltage. Substitute parts must maintain comparable on-resistance to ensure similar power dissipation and thermal characteristics.

Gate Threshold Voltage (Vgs(th)): The FDMS9600S specifies 3V maximum at 250µA. Substitute parts must support logic level gate operation with compatible threshold voltage.

Package and Mounting: The FDMS9600S uses an 8-MLP (5x6) surface mount package. Substitute parts must use compatible surface mount packages with equivalent pinout and thermal characteristics.

Operating Temperature Range: The FDMS9600S operates from -55°C to 150°C (TJ). Substitute parts must support the same temperature range.

Compliance and Certification: Both the main part and substitute parts must maintain ROHS3 compliance and MSL 1 rating for manufacturing compatibility.

The substitute parts listed below meet these criteria within the allowed electrical and mechanical parameters for N-channel MOSFET devices.

Parameter Comparison

Parameter FDMS9600S (onsemi) CSD16410Q5A (TI) CSD16404Q5A (TI) Unit
Manufacturer onsemi Texas Instruments Texas Instruments
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 30 25 25 V
Current - Continuous Drain (Id) @ 25°C 12, 16 16 (Ta), 59 (Tc) 21 (Ta), 81 (Tc) A
Rds On (Max) @ Id, Vgs 8.5 @ 12A, 10V 8.5 @ 17A, 10V 5.1 @ 20A, 10V mOhm
Vgs(th) (Max) @ Id 3 @ 250µA 2.3 @ 250µA 2.1 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 13 @ 4.5V 5 @ 4.5V 8.5 @ 4.5V nC
Input Capacitance (Ciss) (Max) @ Vds 1705 @ 15V 740 @ 12.5V 1220 @ 12.5V pF
Power Dissipation (Max) 1 (Ta) 3 (Ta) 3 (Ta) W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerWDFN (5x6) 8-PowerTDFN (5x6) 8-PowerTDFN (5x6)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

CSD16410Q5A (Texas Instruments): This device is an active product from Texas Instruments in the NexFET™ series. It provides 16A continuous drain current at 25°C (Ta), matching the upper current specification of the FDMS9600S. The CSD16410Q5A operates at 25V Vdss, which is lower than the FDMS9600S 30V rating. The on-resistance specification of 8.5mOhm at 17A, 10V is equivalent to the FDMS9600S. Gate threshold voltage is 2.3V at 250µA, supporting logic level gate operation. The device is ROHS3 compliant with MSL 1 rating. The 8-VSONP (5x6) package is mechanically compatible with the FDMS9600S footprint. Power dissipation capability is 3W (Ta), exceeding the FDMS9600S 1W specification.

CSD16404Q5A (Texas Instruments): This device is an active product from Texas Instruments in the NexFET™ series. It provides 21A continuous drain current at 25°C (Ta), exceeding the FDMS9600S specification. The CSD16404Q5A operates at 25V Vdss, which is lower than the FDMS9600S 30V rating. The on-resistance specification of 5.1mOhm at 20A, 10V is superior to the FDMS9600S. Gate threshold voltage is 2.1V at 250µA, supporting logic level gate operation. The device is ROHS3 compliant with MSL 1 rating. The 8-VSONP (5x6) package is mechanically compatible with the FDMS9600S footprint. Power dissipation capability is 3W (Ta), exceeding the FDMS9600S 1W specification.

Both substitute parts are active products with current manufacturing support, addressing the obsolete status of the FDMS9600S. Selection between CSD16410Q5A and CSD16404Q5A depends on circuit requirements for current handling and on-resistance performance. Both devices maintain compliance certifications equivalent to the FDMS9600S.

Frequently Asked Questions (FAQ)

Q: Can the CSD16410Q5A or CSD16404Q5A be used as direct replacements for the FDMS9600S?

A: Both Texas Instruments devices are functionally compatible substitutes for the FDMS9600S in applications where the 25V Vdss rating is sufficient. The FDMS9600S operates at 30V, while the substitute parts are rated for 25V. If the circuit operates below 25V, substitution is valid. Both devices provide equal or superior current handling, on-resistance, and power dissipation characteristics. Package footprints are mechanically compatible.

Q: What is the primary difference between CSD16410Q5A and CSD16404Q5A?

A: The CSD16404Q5A provides higher continuous drain current (21A at Ta) compared to the CSD16410Q5A (16A at Ta). The CSD16404Q5A also features lower on-resistance (5.1mOhm at 20A, 10V versus 8.5mOhm at 17A, 10V). The CSD16410Q5A has lower gate charge (5nC at 4.5V versus 8.5nC at 4.5V) and lower input capacitance (740pF at 12.5V versus 1220pF at 12.5V). Selection depends on whether the application prioritizes current capacity or switching speed.

Q: Are the package dimensions identical between FDMS9600S and the substitute parts?

A: The FDMS9600S uses an 8-MLP (5x6) Power56 package, while the substitute parts use 8-VSONP (5x6) packages. Both are 5x6mm surface mount packages with 8 pins. The physical footprints are compatible for PCB layout purposes. Pin assignments must be verified against device datasheets to ensure correct circuit connections.

Q: Do the substitute parts support logic level gate operation?

A: Yes. The CSD16410Q5A and CSD16404Q5A both support logic level gate operation with gate threshold voltages of 2.3V and 2.1V respectively at 250µA, compared to the FDMS9600S specification of 3V at 250µA. Both substitute parts operate with standard logic level drive voltages.

Q: What is the voltage limitation when using substitute parts?

A: The FDMS9600S is rated for 30V Vdss, while both substitute parts are rated for 25V Vdss. Applications operating at voltages above 25V require the FDMS9600S or alternative parts with higher voltage ratings. For circuits operating at 25V or below, the substitute parts are suitable.

Q: Are compliance certifications maintained with substitute parts?

A: Yes. Both CSD16410Q5A and CSD16404Q5A are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the FDMS9600S certifications. Both devices are REACH unaffected and classified as EAR99 for export control purposes.

Q: What are the thermal performance differences?

A: The FDMS9600S is rated for 1W maximum power dissipation at Ta. Both substitute parts are rated for 3W maximum power dissipation at Ta, providing superior thermal performance. The lower on-resistance of the substitute parts also contributes to reduced power dissipation in typical applications.

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