FDMS8888 N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8888 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series, housed in an 8-PQFN (5x6) surface mount package. This device is rated for 13.5A continuous drain current at 25°C (Ta) and 21A at case temperature (Tc), with a maximum on-resistance of 9.5mOhm at 13.5A and 10V gate-source voltage. The FDMS8888 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute devices must maintain compatibility across drain-source voltage rating, continuous drain current specifications, on-resistance characteristics, and surface mount package form factor.

Key Parameters

Parameter	FDMS8888 Value	Unit
Drain-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	13.5	A
Continuous Drain Current @ Case (Tc)	21	A
On-Resistance (Rds On Max) @ 13.5A, 10V	9.5	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	33	nC
Input Capacitance (Ciss) @ 15V	1585	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	42	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PQFN (5x6)	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute parts for the FDMS8888 are selected based on strict electrical and mechanical compatibility criteria. All substitute devices must meet the following requirements:

Mandatory Compatibility Parameters:

Drain-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Ta): 13.5A or greater
On-Resistance (Rds On): 9.5mOhm or lower at rated conditions
Gate-Source Voltage Range: ±20V or compatible subset
Operating Temperature Range: -55°C to 150°C minimum
Surface Mount Package: 8-pin configuration with 5x6mm footprint compatibility
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Substitute devices are grouped into two categories based on package compatibility and electrical performance:

Category 1: Direct Package Equivalents (8-PowerTDFN variants) These devices use the same 8-PowerTDFN package family with identical 5x6mm footprint dimensions, enabling direct PCB layout compatibility. Devices in this category include BSC080N03LSGATMA1, CSD17302Q5A, CSD17307Q5A, CSD17322Q5A, CSD17507Q5A, CSD17522Q5A, and CSD17527Q5A.

Category 2: Alternative Package Configurations These devices use different surface mount packages (8-HSOP, PowerFlat™) but maintain electrical parameter compatibility. Devices in this category include RS1E150GNTB and STL56N3LLH5. These require PCB layout modification but provide equivalent electrical performance.

All substitute parts are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original device specifications.

Parameter Comparison

Parameter	FDMS8888	BSC080N03LSGATMA1	CSD17302Q5A	CSD17307Q5A	CSD17507Q5A	CSD17522Q5A	CSD17527Q5A	RS1E150GNTB	STL56N3LLH5	Unit
Manufacturer	onsemi	Infineon	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Rohm	STMicroelectronics	-
Vdss	30	30	30	30	30	30	30	30	30	V
Id (Ta) @ 25°C	13.5	14	16	14	13	87	65	15	56	A
Id (Tc) @ 25°C	21	53	87	73	65	87	65	40	56	A
Rds On (Max) @ 10V	9.5	8	7.9	10.5	10.8	8.1	10.8	8.8	9	mOhm
Vgs(th) @ 250µA	2.5	2.2	1.7	1.8	2.1	2	2	2.5	1	V
Qg @ 4.5-10V	33	21	7	5.2	3.6	4.3	3.4	10	6.5	nC
Ciss @ 15V	1585	1700	950	700	530	695	506	590	950	pF
Power Dissipation (Ta)	2.5	2.5	3	3	3	3	3	3	-	W
Power Dissipation (Tc)	42	35	-	-	-	-	-	22	62.5	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	8-PQFN (5x6)	PG-TDSON-8-5	8-VSONP (5x6)	8-VSONP (5x6)	8-VSONP (5x6)	8-VSONP (5x6)	8-VSONP (5x6)	8-HSOP	PowerFlat™ (5x6)	-
Product Status	Obsolete	Obsolete	Active	Active	Active	Active	Active	Active	Active	-
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	-
MSL Rating	1	1	1	1	1	1	1	1	1	-

Engineering Selection Recommendations

For Direct PCB Layout Compatibility (No Layout Modification Required):

CSD17302Q5A, CSD17307Q5A, CSD17507Q5A, CSD17522Q5A, and CSD17527Q5A are all Texas Instruments NexFET™ series devices in 8-VSONP (5x6) packages. These devices share the same 5x6mm footprint as the FDMS8888 and are classified as Active products, ensuring long-term availability. CSD17302Q5A and CSD17522Q5A exceed the FDMS8888 specifications with lower on-resistance (7.9mOhm and 8.1mOhm respectively) and higher case temperature current ratings (87A). CSD17507Q5A provides the closest electrical match with 13A (Ta) continuous drain current and 10.8mOhm on-resistance.

BSC080N03LSGATMA1 (Infineon OptiMOS™) is an alternative 8-PowerTDFN package variant with 14A (Ta) continuous drain current and 8mOhm on-resistance. This device is classified as Obsolete but maintains full electrical compatibility.

For Applications Requiring Enhanced Thermal Performance:

STL56N3LLH5 (STMicroelectronics STripFET™ V) in PowerFlat™ (5x6) package provides 56A (Tc) continuous drain current and 62.5W (Tc) power dissipation, significantly exceeding the FDMS8888 thermal capabilities. This device requires PCB layout modification due to different package pinout but is suitable for high-power applications.

RS1E150GNTB (Rohm Semiconductor) in 8-HSOP package provides 15A (Ta) continuous drain current with 8.8mOhm on-resistance and 22W (Tc) power dissipation. This device also requires PCB layout modification but offers improved thermal performance over the original FDMS8888.

Compliance and Certification:

All substitute devices are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. CSD17302Q5A and CSD17522Q5A are classified as REACH Affected; all other substitutes are REACH Unaffected. All devices carry EAR99 ECCN classification and 8541.29.0095 HTSUS code, matching the original part's regulatory status.

Frequently Asked Questions (FAQ)

Q: Can CSD17302Q5A be used as a direct replacement for FDMS8888 without PCB modification?

A: Yes. CSD17302Q5A uses the 8-VSONP (5x6) package, which shares the same 5x6mm footprint as the FDMS8888 8-PQFN package. Pin assignments and electrical characteristics are compatible for direct substitution. However, verify pinout compatibility with your specific PCB design before implementation.

Q: What is the primary difference between the Texas Instruments NexFET™ devices (CSD17302Q5A, CSD17307Q5A, CSD17507Q5A, CSD17522Q5A, CSD17527Q5A)?

A: These devices differ primarily in continuous drain current ratings and gate charge specifications. CSD17302Q5A provides 16A (Ta) with 7nC gate charge. CSD17307Q5A provides 14A (Ta) with 5.2nC gate charge. CSD17507Q5A provides 13A (Ta) with 3.6nC gate charge. CSD17522Q5A and CSD17527Q5A provide 87A and 65A (Tc) respectively with lower gate charge values. Selection depends on your application's current and switching speed requirements.

Q: Why is the FDMS8888 classified as Obsolete, and what does this mean for my design?

A: Obsolete status indicates that onsemi has discontinued production of this device. Existing inventory may be available through authorized distributors, but long-term supply cannot be guaranteed. Transitioning to an Active substitute device ensures design continuity and future production support. All recommended substitutes are classified as Active products.

Q: Can STL56N3LLH5 be used in place of FDMS8888 without any design changes?

A: No. STL56N3LLH5 uses a PowerFlat™ (5x6) package with a different pinout than the FDMS8888 8-PQFN package. PCB layout modification is required, including trace routing and via placement adjustments. However, the electrical performance is superior, with 56A (Tc) continuous drain current and 62.5W (Tc) power dissipation, making it suitable for high-power applications where thermal performance is critical.

Q: What is the significance of the on-resistance (Rds On) parameter when selecting a substitute?

A: On-resistance directly affects power dissipation and thermal performance. Lower on-resistance reduces I²R losses, resulting in lower junction temperatures and improved efficiency. The FDMS8888 specifies 9.5mOhm maximum on-resistance at 13.5A and 10V. Substitute devices with equal or lower on-resistance values maintain or improve thermal characteristics. CSD17302Q5A (7.9mOhm) and BSC080N03LSGATMA1 (8mOhm) provide improved performance.

Q: Are all substitute devices RoHS3 compliant?

A: Yes. All recommended substitute devices are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the FDMS8888 environmental specifications. This ensures compatibility with modern manufacturing processes and regulatory requirements.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: Ta (ambient temperature) current rating assumes operation at 25°C ambient temperature without active cooling. Tc (case temperature) rating assumes operation with the device case maintained at 25°C through active cooling or thermal management. Tc ratings are typically higher because they represent the device's maximum capability under optimal thermal conditions. For the FDMS8888, Ta rating is 13.5A while Tc rating is 21A.

Q: Can I use CSD17527Q5A (65A Tc) instead of FDMS8888 (21A Tc) in a low-current application?

A: Yes. CSD17527Q5A is rated for higher current than required, but this does not create compatibility issues in lower-current applications. The device will operate well within its specifications. However, verify that the lower gate charge (3.4nC versus 33nC) does not affect your gate drive circuit design, as faster switching characteristics may require circuit adjustments.

Q: What packaging considerations should I evaluate when selecting a substitute?

A: Packaging affects PCB layout, thermal performance, and manufacturing compatibility. Direct footprint replacements (8-VSONP, 8-PQFN, PG-TDSON-8-5) require minimal or no PCB modification. Alternative packages (8-HSOP, PowerFlat™) require layout redesign but may offer superior thermal performance. Verify that your PCB design can accommodate the selected package before implementation.

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