FDMS8680 N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8680 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series. This device operates at continuous drain currents of 14A (Ta) and 35A (Tc) with a maximum on-resistance of 7mOhm at 10V gate-source voltage. The part is housed in an 8-PQFN (5x6) surface mount package and is actively produced.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility exist within the same voltage class (30V Vdss), similar current ratings, comparable on-resistance characteristics, and compatible package footprints. The FDMS8680 remains in active production; however, alternative sources and variants are available for design flexibility, supply chain optimization, and performance trade-offs.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	14	A
Continuous Drain Current @ 25°C (Tc)	35	A
On-Resistance (Rds On) @ 14A, 10V	7	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 10V	26	nC
Input Capacitance (Ciss) @ 15V	1590	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	50	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PQFN (5x6)	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitute parts are classified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 30V (exact match required)
Continuous Drain Current: 12A to 17A (Ta) range acceptable
On-Resistance (Rds On): 6mOhm to 12mOhm at 10V gate-source voltage
Package Compatibility: 8-PQFN (5x6) or equivalent 8-pin surface mount footprint
Operating Temperature: -55°C to 150°C (minimum requirement)
RoHS3 Compliance and MSL Level 1 (Unlimited)

Grouping Categories:

Group 1: onsemi PowerTrench® Series (Same Manufacturer, Same Package)

FDMS7682: Higher current rating (16A Ta, 22A Tc), lower Rds On (6.3mOhm)
NTMFS4C10NT1G: Lower current rating (8.2A Ta), different package (5-DFN), lower gate charge

Group 2: Infineon OptiMOS™ Series (Alternative Manufacturer, TDSON Package)

BSC080N03LSGATMA1: Matched current (14A Ta, 53A Tc), higher Rds On (8mOhm), Obsolete status
BSC080N03MSGATMA1: Similar current (13A Ta, 53A Tc), higher Rds On (8mOhm), Not For New Designs
BSC090N03LSGATMA1: Lower current (13A Ta, 48A Tc), higher Rds On (9mOhm), Active status
BSC100N03MSGATMA1: Lower current (12A Ta, 44A Tc), higher Rds On (10mOhm), Not For New Designs
BSC120N03LSGATMA1: Lower current (12A Ta, 39A Tc), higher Rds On (12mOhm), Active status
BSC120N03MSGATMA1: Lower current (11A Ta, 39A Tc), higher Rds On (12mOhm), Active status

Group 3: Texas Instruments NexFET™ Series (Alternative Manufacturer, VSON Package)

CSD16410Q5A: Lower voltage (25V Vdss), matched current (16A Ta, 59A Tc), lower Rds On (8.5mOhm)
CSD17552Q5A: Matched voltage (30V Vdss), higher current (17A Ta, 60A Tc), lower Rds On (6.2mOhm)

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Ta (A)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Package	Status
FDMS8680	onsemi	30	14	35	7	26	1590	8-PQFN (5x6)	Active
FDMS7682	onsemi	30	16	22	6.3	30	1885	8-PQFN (5x6)	Active
NTMFS4C10NT1G	onsemi	30	8.2	-	6.95	9.7	987	5-DFN (5x6)	Active
BSC080N03LSGATMA1	Infineon	30	14	53	8	21	1700	PG-TDSON-8-5	Obsolete
BSC080N03MSGATMA1	Infineon	30	13	53	8	27	2100	PG-TDSON-8-5	Not For New Designs
BSC090N03LSGATMA1	Infineon	30	13	48	9	18	1500	PG-TDSON-8-5	Active
BSC100N03MSGATMA1	Infineon	30	12	44	10	23	1700	PG-TDSON-8-5	Not For New Designs
BSC120N03LSGATMA1	Infineon	30	12	39	12	15	1200	PG-TDSON-8-5	Active
BSC120N03MSGATMA1	Infineon	30	11	39	12	20	1500	PG-TDSON-8-5	Active
CSD16410Q5A	Texas Instruments	25	16	59	8.5	5	740	8-VSONP (5x6)	Active
CSD17552Q5A	Texas Instruments	30	17	60	6.2	12	2050	8-VSONP (5x6)	Active

Engineering Selection Recommendations

Direct Substitutes (Same Voltage, Compatible Current Ratings):

FDMS7682 is the primary substitute within the onsemi PowerTrench® family. It maintains 30V Vdss, operates at 16A (Ta) and 22A (Tc), and features lower on-resistance (6.3mOhm). Both parts share the 8-PQFN (5x6) package footprint and are RoHS3 compliant with MSL Level 1. The FDMS7682 is actively produced and suitable for new designs.

CSD17552Q5A from Texas Instruments provides equivalent 30V Vdss operation with higher current capability (17A Ta, 60A Tc) and superior on-resistance (6.2mOhm). The 8-VSONP (5x6) package is mechanically compatible with the FDMS8680 footprint. This part is actively produced and recommended for applications requiring lower conduction losses.

Conditional Substitutes (Voltage or Current Derating Required):

CSD16410Q5A operates at 25V Vdss, which is 5V below the FDMS8680 specification. This part is suitable only for applications where the maximum operating voltage does not exceed 25V. The device offers higher current capability (16A Ta, 59A Tc) and lower on-resistance (8.5mOhm). Active production status supports new designs.

Infineon OptiMOS™ series devices (BSC080N03LSGATMA1, BSC080N03MSGATMA1, BSC090N03LSGATMA1, BSC100N03MSGATMA1, BSC120N03LSGATMA1, BSC120N03MSGATMA1) maintain 30V Vdss but exhibit progressively higher on-resistance values (8mOhm to 12mOhm) and lower continuous drain currents (11A to 13A at Ta). The PG-TDSON-8-5 package is mechanically compatible with the FDMS8680 footprint. BSC090N03LSGATMA1, BSC120N03LSGATMA1, and BSC120N03MSGATMA1 are actively produced. BSC080N03LSGATMA1 is obsolete; BSC080N03MSGATMA1 and BSC100N03MSGATMA1 are not recommended for new designs.

Not Recommended:

NTMFS4C10NT1G operates at significantly lower continuous drain current (8.2A Ta) and uses a 5-DFN package with different pin configuration. This part is suitable only for applications with reduced current requirements and requires PCB layout modification.

Frequently Asked Questions (FAQ)

Q: Can FDMS7682 directly replace FDMS8680 in existing designs?

A: Yes. Both parts share identical 30V Vdss rating, 8-PQFN (5x6) package footprint, and RoHS3 compliance. FDMS7682 provides improved performance with lower on-resistance (6.3mOhm vs. 7mOhm) and higher current capability (16A Ta vs. 14A Ta). No PCB modifications are required.

Q: What is the voltage derating requirement for CSD16410Q5A?

A: CSD16410Q5A operates at 25V Vdss maximum, which is 5V below the FDMS8680 specification. This part is suitable only for applications where the maximum drain-source voltage does not exceed 25V. Verify circuit design voltage margins before substitution.

Q: Are Infineon OptiMOS™ devices pin-compatible with FDMS8680?

A: Infineon OptiMOS™ devices use the PG-TDSON-8-5 package, which is mechanically compatible with the FDMS8680 8-PQFN (5x6) footprint. Pin assignments are equivalent for standard MOSFET applications (Gate, Drain, Source). Verify pinout documentation for specific device variants before PCB layout.

Q: Why do some substitute parts show higher on-resistance?

A: On-resistance varies with die design, process technology, and current rating. Infineon OptiMOS™ series devices exhibit on-resistance values from 8mOhm to 12mOhm due to different die geometries optimized for specific current and power dissipation targets. Higher on-resistance results in increased conduction losses; verify thermal performance for your application.

Q: Which substitute parts are recommended for new designs?

A: FDMS7682 (onsemi), CSD17552Q5A (Texas Instruments), BSC090N03LSGATMA1 (Infineon), BSC120N03LSGATMA1 (Infineon), and BSC120N03MSGATMA1 (Infineon) are actively produced and suitable for new designs. Avoid BSC080N03LSGATMA1 (obsolete), BSC080N03MSGATMA1 (not for new designs), and BSC100N03MSGATMA1 (not for new designs).

Q: What is the gate charge difference between FDMS8680 and CSD17552Q5A?

A: FDMS8680 has gate charge of 26nC at 10V, while CSD17552Q5A has 12nC at 4.5V. Lower gate charge in CSD17552Q5A results in faster switching transitions and reduced gate drive power requirements. This characteristic is advantageous in high-frequency switching applications.

Q: Can NTMFS4C10NT1G be used in place of FDMS8680?

A: NTMFS4C10NT1G is not recommended as a direct substitute. The device operates at only 8.2A continuous drain current (Ta), which is 41% below the FDMS8680 rating. Additionally, the 5-DFN package has different pin configuration and requires PCB layout modification. Use this part only for applications with reduced current requirements.

Q: What are the thermal performance differences between substitute parts?

A: Power dissipation ratings vary across substitutes. FDMS8680 dissipates 50W (Tc); CSD17552Q5A dissipates 3W (Ta) only; Infineon OptiMOS™ devices dissipate 28W to 35W (Tc). Verify thermal management requirements for your application, including junction temperature limits and heat sink specifications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant with MSL Level 1 (Unlimited moisture sensitivity). All parts are REACH unaffected and classified under ECCN EAR99 with HTSUS code 8541.29.0095.

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