FDMS8674 N-Channel MOSFET 30V 17A/21A Equivalent & Substitute Parts

Part Overview

The FDMS8674 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 17A (Ta) and 21A (Tc). This device is housed in an 8-PQFN (5x6) surface mount package and is part of the PowerTrench® series. The FDMS8674 is classified as obsolete, making identification of functionally equivalent active alternatives necessary for new designs and ongoing production support.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	17	A
Continuous Drain Current @ 25°C (Tc)	21	A
Rds On (Max) @ Id, Vgs	5 mOhm @ 17A, 10V	—
Gate Charge (Qg) @ Vgs	37 nC @ 10V	—
Input Capacitance (Ciss) @ Vds	2320 pF @ 15V	—
Power Dissipation (Max) (Ta)	2.5	W
Power Dissipation (Max) (Tc)	78	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-PQFN (5x6)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the FDMS8674 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-source voltage (Vdss) equal to or greater than 30V
Continuous drain current (Ta) equal to or greater than 17A
N-Channel MOSFET technology
Surface mount package configuration
Operating temperature range encompassing -55°C to 150°C
On-resistance (Rds On) at rated conditions compatible with application requirements

Secondary Compatibility Factors:

Gate charge (Qg) and input capacitance (Ciss) values that do not degrade circuit performance
Power dissipation capability sufficient for thermal management
Compliance status and regulatory certifications

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with active product status) and Similar Alternatives (meeting electrical requirements with enhanced performance characteristics or different package configurations).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C Ta (A)	Id @ 25°C Tc (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Package	Status
FDMS8674	onsemi	30	17	21	5.0 @ 17A, 10V	37 @ 10V	2320 @ 15V	8-PQFN (5x6)	Obsolete
FDMS7672	Fairchild Semiconductor	30	19	28	5.0 @ 19A, 10V	44 @ 10V	2960 @ 15V	8-PowerTDFN	Active
BSC042N03MSGATMA1	Infineon Technologies	30	17	93	4.2 @ 30A, 10V	55 @ 10V	4300 @ 15V	PG-TDSON-8-5	Active
BSC057N03LSGATMA1	Infineon Technologies	30	17	71	5.7 @ 30A, 10V	30 @ 10V	2400 @ 15V	PG-TDSON-8-5	Obsolete
BSC050N03LSGATMA1	Infineon Technologies	30	18	80	5.0 @ 30A, 10V	35 @ 10V	2800 @ 15V	PG-TDSON-8-5	Active
CSD16404Q5A	Texas Instruments	25	21	81	5.1 @ 20A, 10V	8.5 @ 4.5V	1220 @ 12.5V	8-VSONP (5x6)	Active
CSD17310Q5A	Texas Instruments	30	21	100	5.1 @ 20A, 8V	11.6 @ 4.5V	1560 @ 15V	8-VSONP (5x6)	Active
CSD17506Q5A	Texas Instruments	30	—	100	4.0 @ 20A, 10V	11 @ 4.5V	1650 @ 15V	8-VSONP (5x6)	Active
CSD17510Q5A	Texas Instruments	30	20	100	5.2 @ 20A, 10V	8.3 @ 4.5V	1250 @ 15V	8-VSONP (5x6)	Active
CSD17577Q3A	Texas Instruments	30	35	—	4.8 @ 16A, 10V	35 @ 10V	2310 @ 15V	8-VSONP (3x3.3)	Active
CSD17577Q5A	Texas Instruments	30	60	—	4.2 @ 18A, 10V	35 @ 10V	2310 @ 15V	8-VSONP (5x6)	Active

Engineering Selection Recommendations

Direct Equivalents for Obsolete FDMS8674:

The FDMS7672 (Fairchild Semiconductor) is the primary active substitute. It maintains 30V Vdss rating, exceeds the minimum 17A Ta requirement with 19A, and provides enhanced Tc performance at 28A. The device is active and available in high inventory. On-resistance matches the FDMS8674 specification at 5.0 mOhm, ensuring equivalent switching and conduction losses.

Infineon OptiMOS™ Series Alternatives:

BSC042N03MSGATMA1 and BSC050N03LSGATMA1 are active Infineon devices meeting all primary electrical criteria. Both maintain 30V Vdss and exceed 17A Ta requirements. BSC042N03MSGATMA1 offers superior on-resistance at 4.2 mOhm and exceptional Tc performance at 93A. BSC050N03LSGATMA1 provides balanced performance with 18A Ta and 80A Tc. Both devices carry ROHS3 compliance and REACH Unaffected status. BSC057N03LSGATMA1 is classified as obsolete and is not recommended for new designs despite high inventory availability.

Texas Instruments NexFET™ Series Alternatives:

CSD17310Q5A, CSD17510Q5A, and CSD17577Q5A are active NexFET™ devices rated for 30V Vdss with continuous drain currents exceeding FDMS8674 requirements. These devices feature lower gate charge and input capacitance, reducing switching losses. CSD17310Q5A and CSD17510Q5A provide 21A and 20A Ta ratings respectively, with 100A Tc performance. CSD17577Q5A delivers 60A Ta capability. All three carry ROHS3 compliance and REACH Unaffected status.

CSD16404Q5A is rated for 25V Vdss, which is below the FDMS8674 specification and is not suitable for direct substitution in applications requiring 30V operation.

CSD17506Q5A is specified for 100A Tc only, with no Ta rating provided, and is suitable only for applications where continuous drain current at 25°C ambient is not a primary design constraint.

CSD17577Q3A uses a different package footprint (8-VSONP 3x3.3) compared to the FDMS8674 and requires PCB layout modification.

Compliance and Regulatory Status:

All recommended active substitutes carry ROHS3 compliance and REACH Unaffected status, ensuring regulatory alignment with current manufacturing standards. Moisture sensitivity level is MSL 1 (Unlimited) across all alternatives, matching the FDMS8674 specification.

Frequently Asked Questions (FAQ)

Q: Can the FDMS7672 directly replace the FDMS8674 without circuit modification?

A: The FDMS7672 meets all primary electrical specifications and maintains the same 30V Vdss and 5.0 mOhm on-resistance. Package compatibility requires verification, as the FDMS7672 uses an 8-PowerTDFN package. If the PCB footprint matches the FDMS8674 8-PQFN (5x6) package, direct substitution is possible. Consult package datasheets for pin-to-pin compatibility.

Q: What is the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current at 25°C ambient temperature, while Tc represents continuous drain current at 25°C case temperature. Ta is typically the limiting factor in applications with natural convection cooling. Tc indicates maximum current capability with active thermal management. The FDMS8674 specifies 17A (Ta) and 21A (Tc), indicating thermal management is required to achieve the higher rating.

Q: Are the Infineon OptiMOS™ devices compatible with the FDMS8674 package footprint?

A: Infineon OptiMOS™ devices (BSC042N03MSGATMA1, BSC050N03LSGATMA1, BSC057N03LSGATMA1) use the PG-TDSON-8-5 package, which differs from the FDMS8674 8-PQFN (5x6) package. PCB layout modification is required for substitution. Pin configuration and thermal pad placement must be verified against device datasheets before implementation.

Q: Why do some Texas Instruments NexFET™ devices show lower gate charge than the FDMS8674?

A: Gate charge (Qg) is measured at different gate-source voltages across device families. CSD16404Q5A, CSD17310Q5A, CSD17506Q5A, and CSD17510Q5A specify Qg at 4.5V, while the FDMS8674 specifies Qg at 10V. Lower gate charge at lower drive voltages indicates faster switching transitions and reduced gate drive power requirements. Direct comparison requires normalization to the same Vgs reference point.

Q: Is the CSD16404Q5A suitable as a substitute for the FDMS8674?

A: The CSD16404Q5A is rated for 25V Vdss, which is 5V below the FDMS8674 specification of 30V. This device is not suitable for applications requiring 30V operation. Use only in circuits where maximum operating voltage does not exceed 25V.

Q: What is the impact of higher input capacitance in substitute devices?

A: Input capacitance (Ciss) affects gate drive circuit design and switching speed. The FDMS8674 specifies 2320 pF at 15V. Infineon BSC042N03MSGATMA1 specifies 4300 pF, requiring higher gate drive current to achieve equivalent switching speed. Texas Instruments NexFET™ devices specify lower Ciss values (1220–1650 pF), enabling faster switching with reduced gate drive power. Circuit simulation is recommended to verify switching performance with substitute devices.

Q: Can obsolete substitute parts be used in new product designs?

A: Obsolete parts (FDMS8674, BSC057N03LSGATMA1) are not recommended for new designs. Use only active-status devices to ensure long-term supply chain availability and manufacturing support. Active alternatives include FDMS7672, BSC042N03MSGATMA1, BSC050N03LSGATMA1, and the Texas Instruments NexFET™ series.

Q: What is the significance of ROHS3 compliance and REACH Unaffected status?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. REACH Unaffected status indicates the device is not subject to Registration, Evaluation, Authorization, and Restriction of Chemicals regulations. Both certifications are required for products sold in European markets and are standard for current-generation semiconductor devices.

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