FDMS8670AS N-Channel 30V 23A/42A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8670AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 23A at Ta and 42A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substiute Parts

FDMS8670AS
onsemiIn Stock: 3062FDMS8670AS Datasheet
FDMS8670AS
Current Part
BSC030N03LSGATMA1
Infineon TechnologiesIn Stock: 5541BSC030N03LSGATMA1 Datasheet
BSC030N03LSGATMA1
Direct
BSC0503NSIATMA1
Infineon TechnologiesIn Stock: 5661BSC0503NSIATMA1 Datasheet
BSC0503NSIATMA1
Direct
BSC020N03MSGATMA1
Infineon TechnologiesIn Stock: 33257BSC020N03MSGATMA1 Datasheet
BSC020N03MSGATMA1
Similar
BSC025N03MSGATMA1
Infineon TechnologiesIn Stock: 1058BSC025N03MSGATMA1 Datasheet
BSC025N03MSGATMA1
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BSC030N03MSGATMA1
Infineon TechnologiesIn Stock: 11748BSC030N03MSGATMA1 Datasheet
BSC030N03MSGATMA1
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CSD16403Q5A
Texas InstrumentsIn Stock: 8026CSD16403Q5A Datasheet
CSD16403Q5A
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CSD17301Q5A
Texas InstrumentsIn Stock: 8515CSD17301Q5A Datasheet
CSD17301Q5A
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CSD17305Q5A
Texas InstrumentsIn Stock: 8683CSD17305Q5A Datasheet
CSD17305Q5A
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CSD17306Q5A
Texas InstrumentsIn Stock: 10255CSD17306Q5A Datasheet
CSD17306Q5A
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CSD17501Q5A
Texas InstrumentsIn Stock: 30474CSD17501Q5A Datasheet
CSD17501Q5A
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PSMN3R0-30YL,115
Nexperia USA Inc.In Stock: 42968PSMN3R0-30YL,115 Datasheet
PSMN3R0-30YL,115
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TSM036N03PQ56 RLG
Taiwan Semiconductor CorporationIn Stock: 2786TSM036N03PQ56 RLG Datasheet
TSM036N03PQ56 RLG
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 23 A
Continuous Drain Current @ 25°C (Tc) 42 A
On-Resistance (Rds On) @ 23A, 10V 3 mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA 3 V
Gate Charge (Qg) @ 10V 55 nC
Input Capacitance (Ciss) @ 15V 3615 pF
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 78 W
Operating Temperature Range -55 to 150 °C
Package Type 8-PowerTDFN
Mounting Type Surface Mount
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDMS8670AS are classified based on strict electrical and mechanical parameter alignment within the N-Channel MOSFET category. The substitution logic is based on the following critical parameters:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 30V minimum
  • Continuous Drain Current: 23A or greater at Ta, 42A or greater at Tc
  • On-Resistance (Rds On): 3mOhm or lower at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): Compatible with 3V to 10V drive voltage range
  • Package Type: 8-PowerTDFN surface mount configuration
  • Operating Temperature Range: -55°C to 150°C minimum

Substitution Categories:

Direct Substitutes meet all primary electrical parameters and package requirements with equivalent or superior performance characteristics.

Similar Substitutes meet the core voltage and current ratings but may exhibit variations in secondary parameters such as gate charge, input capacitance, or on-resistance that remain within acceptable operational ranges for most applications.

Parts are listed with their manufacturer, product status (Active or Obsolete), and compliance certifications to support design decision-making.

Parameter Comparison

Parameter FDMS8670AS (Main) BSC030N03LSGATMA1 BSC0503NSIATMA1 BSC020N03MSGATMA1 BSC025N03MSGATMA1 BSC030N03MSGATMA1 CSD17301Q5A CSD17305Q5A CSD17306Q5A CSD17501Q5A
Manufacturer onsemi Infineon Infineon Infineon Infineon Infineon Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Vdss (V) 30 30 30 30 30 30 30 30 30 30
Id @ Ta (A) 23 23 22 25 23 21 28 29 24
Id @ Tc (A) 42 100 88 100 100 100 100 100 100 100
Rds On (mOhm) 3 3 3 2 2.5 3 2.6 3.4 3.7 2.9
Vgs(th) (V) 3 2.2 2 2 2 2 1.55 1.6 1.6 1.8
Qg @ 10V (nC) 55 55 20 124 98 73 25 18.3 15.3 17
Ciss @ 15V (pF) 3615 4300 1300 9600 7600 5700 3480 2600 2170 2630
Power Dissipation Ta (W) 2.5 2.5 2.5 2.5 2.5 2.5 3.2 3.1 3.2 3.2
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Product Status Obsolete Active Active Active Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

The BSC030N03LSGATMA1 (Infineon OptiMOS™) and BSC0503NSIATMA1 (Infineon OptiMOS™) are direct substitutes that maintain the 30V Vdss rating and meet or exceed the 23A continuous drain current specification. Both devices are Active products with ROHS3 compliance and MSL 1 rating, ensuring long-term availability and environmental compliance. The BSC030N03LSGATMA1 provides identical gate charge (55 nC) and comparable on-resistance (3 mOhm), making it the closest electrical equivalent. The BSC0503NSIATMA1 offers reduced gate charge (20 nC) and input capacitance (1300 pF), which may reduce switching losses in high-frequency applications.

Primary Alternatives (Equivalent Performance):

The CSD17501Q5A (Texas Instruments NexFET™) is an Active product rated for 30V and 100A at Tc, with superior on-resistance (2.9 mOhm) and lower gate charge (17 nC). This device is suitable for applications requiring enhanced thermal performance and reduced switching losses. The CSD17305Q5A and CSD17306Q5A provide 30V ratings with 29A and 24A continuous drain current respectively, both with Active status and ROHS3 compliance.

Secondary Alternatives (Acceptable Substitution):

The BSC020N03MSGATMA1, BSC025N03MSGATMA1, and BSC030N03MSGATMA1 (all Infineon OptiMOS™) meet the 30V voltage requirement with continuous drain currents of 25A, 23A, and 21A respectively. These devices are Active products with ROHS3 compliance. The BSC020N03MSGATMA1 exhibits superior on-resistance (2 mOhm) but higher gate charge (124 nC). The CSD17301Q5A (Texas Instruments NexFET™) is rated for 30V and 28A at Ta with 2.6 mOhm on-resistance.

Compliance and Availability:

All substitute parts listed are Active products with ROHS3 compliance and MSL 1 rating, ensuring regulatory compliance and long-term supply chain stability. The FDMS8670AS is classified as Obsolete; therefore, transition to an Active substitute is necessary for new designs and ongoing production support.

Frequently Asked Questions (FAQ)

Q: Can the BSC030N03LSGATMA1 directly replace the FDMS8670AS in existing designs?

A: The BSC030N03LSGATMA1 meets all primary electrical specifications: 30V Vdss, 23A continuous drain current at Ta, and 3 mOhm on-resistance. Both devices use the 8-PowerTDFN package. Pin-to-pin compatibility and gate drive voltage requirements must be verified against the specific application schematic. The gate threshold voltage differs (2.2V vs. 3V), which may require adjustment of gate drive timing in precision applications.

Q: What is the difference between Direct and Similar substitutes?

A: Direct substitutes maintain identical or superior performance across all critical parameters including gate charge, input capacitance, and on-resistance. Similar substitutes meet the core voltage and current ratings but may exhibit variations in secondary parameters. Both categories are electrically compatible with the FDMS8670AS for standard switching applications.

Q: Why do some substitutes show higher continuous drain current at Tc (100A) compared to the FDMS8670AS (42A)?

A: Continuous drain current at Tc (case temperature) reflects the device's thermal performance and package design. Higher Tc ratings indicate superior thermal dissipation capability. The FDMS8670AS specification of 42A at Tc is conservative compared to modern alternatives. Substitutes with higher Tc ratings provide additional thermal margin and are suitable for applications with elevated ambient temperatures or high-frequency switching.

Q: Are all listed substitutes RoHS3 compliant?

A: All substitute parts listed are ROHS3 compliant. The FDMS8670AS does not specify RoHS status. For applications requiring RoHS compliance, any of the listed substitutes are acceptable. All parts carry MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., CSD17305Q5A at 18.3 nC) reduces switching losses and allows higher switching frequencies. Higher gate charge (e.g., BSC020N03MSGATMA1 at 124 nC) requires more gate drive current but may provide improved noise immunity. Selection depends on the gate driver capability and switching frequency requirements of the application.

Q: Can I use CSD16403Q5A as a substitute despite its 25V Vdss rating?

A: The CSD16403Q5A is rated for 25V Vdss, which is below the FDMS8670AS specification of 30V. This device is not recommended as a direct substitute for applications requiring the full 30V voltage margin. Use only substitutes rated for 30V Vdss or higher to maintain design safety margins.

Q: What packaging considerations apply when substituting the FDMS8670AS?

A: All listed substitutes use the 8-PowerTDFN surface mount package, which is mechanically and electrically compatible with the FDMS8670AS 8-PQFN (5x6) package. PCB layout, thermal vias, and solder pad dimensions should be verified against the specific substitute part's datasheet to ensure optimal thermal performance and manufacturing compatibility.

Q: Are there inventory considerations when selecting a substitute?

A: Inventory availability varies by substitute. The CSD17501Q5A (Texas Instruments) shows 30,400 units in stock, while the BSC025N03MSGATMA1 (Infineon) shows 1,042 units. For high-volume production, verify current inventory levels with your component supplier to ensure supply chain continuity.

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