FDMS8670 N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8670 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series, designed for surface mount applications in the 8-PQFN (5x6) package. This device delivers 24A continuous drain current at Ta and 42A at Tc, with a maximum on-resistance of 2.6mOhm at 24A and 10V gate-source voltage. The FDMS8670 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility across drain-source voltage rating, continuous drain current specifications, gate-source voltage parameters, and thermal characteristics to ensure functional equivalence in circuit applications.

Substiute Parts

FDMS8670

onsemiIn Stock: 1533FDMS8670 Datasheet

Current PartRFQ

FDMS7660

Fairchild SemiconductorIn Stock: 35423FDMS7660 Datasheet

SimilarRFQ

BSC025N03LSGATMA1

Infineon TechnologiesIn Stock: 40138BSC025N03LSGATMA1 Datasheet

SimilarRFQ

BSC0901NSATMA1

Infineon TechnologiesIn Stock: 110149BSC0901NSATMA1 Datasheet

SimilarRFQ

BSC0902NSATMA1

Infineon TechnologiesIn Stock: 75273BSC0902NSATMA1 Datasheet

SimilarRFQ

PSMN2R5-30YL,115

Nexperia USA Inc.In Stock: 120432PSMN2R5-30YL,115 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMS8670 is determined by strict equivalence across the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 30V to ensure safe operation within the same voltage class.

Continuous Drain Current: Substitute parts must support a minimum continuous drain current of 24A at Ta (ambient temperature) to meet or exceed the original specification. Parts with higher current ratings at Tc (case temperature) provide additional thermal margin.

On-Resistance (Rds On): The maximum on-resistance specification at rated gate-source voltage (10V) must not exceed the original 2.6mOhm at 24A to maintain equivalent power dissipation characteristics.

Gate-Source Voltage (Vgs): Substitute parts must support the same maximum gate-source voltage range (±20V) and threshold voltage compatibility to ensure proper gate drive circuit operation.

Gate Charge (Qg): Gate charge specifications influence switching speed and gate drive requirements. Substitute parts with comparable gate charge values maintain similar switching characteristics.

Input Capacitance (Ciss): Input capacitance affects gate drive circuit design and switching performance. Substitute parts with similar input capacitance values provide equivalent circuit behavior.

Thermal Characteristics: Power dissipation ratings at both Ta and Tc must support the thermal requirements of the application.

Package Compatibility: All substitute parts are specified in 8-pin surface mount packages (8-PowerTDFN or equivalent) to maintain PCB layout compatibility.

Parameter Comparison

Engineering Selection Recommendations

FDMS7660 (Fairchild Semiconductor): This part is the closest functional equivalent to the FDMS8670, sharing the same PowerTrench® series designation, identical package footprint (8-PQFN 5x6), and matching thermal specifications (78W at Tc). The FDMS7660 delivers 25A continuous drain current at Ta, exceeding the original 24A specification, with equivalent on-resistance of 2.8mOhm at 10V. Product status is Active, ensuring long-term availability. This part is suitable for direct replacement in existing designs.

BSC0901NSATMA1 (Infineon Technologies): This OptiMOS™ series device meets all voltage and current requirements with superior on-resistance performance (1.9mOhm at 30A, 10V) and lower gate charge (44 nC), resulting in improved switching efficiency. The part is Active and RoHS3 compliant. However, the PG-TDSON-8-5 package differs from the original 8-PQFN (5x6), requiring PCB layout verification. Input capacitance is significantly lower (2800 pF), which may require gate drive circuit adjustment.

BSC025N03LSGATMA1 (Infineon Technologies): This OptiMOS™ part provides the lowest on-resistance (2.5mOhm at 30A, 10V) and highest case temperature current rating (100A at Tc), with superior thermal performance (83W at Tc). The product status is Not For New Designs, limiting suitability for new applications. The PG-TDSON-8-5 package requires PCB layout verification. Higher input capacitance (6100 pF) may impact gate drive design.

BSC0902NSATMA1 (Infineon Technologies): This OptiMOS™ device matches the original 24A continuous drain current specification exactly and maintains equivalent on-resistance (2.6mOhm at 30A, 10V). The part is Active and RoHS3 compliant. The PG-TDSON-8-6 package differs from the original, requiring PCB layout verification. Significantly lower gate charge (26 nC) and input capacitance (1700 pF) provide faster switching characteristics but require gate drive circuit evaluation.

PSMN2R5-30YL,115 (Nexperia USA Inc.): This part delivers the highest case temperature current rating (100A at Tc) and power dissipation (88W at Tc), with excellent on-resistance (2.4mOhm at 15A, 10V). The extended operating temperature range (-55 to 175°C) provides additional thermal margin. Product status is Not For New Designs. The LFPAK56 package is significantly different from the original 8-PQFN (5x6), requiring substantial PCB layout redesign. This part is suitable only for applications where package change is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the FDMS7660 be used as a direct replacement for the FDMS8670?

A: Yes. The FDMS7660 shares identical package footprint (8-PQFN 5x6), voltage rating (30V), thermal specifications (78W at Tc), and gate-source voltage range (±20V). The FDMS7660 delivers 25A continuous drain current at Ta, exceeding the original 24A specification. On-resistance is 2.8mOhm at 10V, compared to 2.6mOhm for the FDMS8670, representing a 7.7% increase. The FDMS7660 is Active, ensuring long-term availability.

Q: What are the key differences between the Infineon OptiMOS™ substitutes and the original FDMS8670?

A: The Infineon OptiMOS™ parts (BSC025N03LSGATMA1, BSC0901NSATMA1, BSC0902NSATMA1) offer superior on-resistance performance and lower gate charge, resulting in improved switching efficiency and reduced power dissipation. However, these parts use PG-TDSON-8-5 or PG-TDSON-8-6 packages instead of the original 8-PQFN (5x6), requiring PCB layout verification. Input capacitance values vary significantly, which may necessitate gate drive circuit adjustment.

Q: Is package compatibility critical when selecting a substitute?

A: Package compatibility is critical for direct PCB replacement without layout redesign. The FDMS7660 maintains the original 8-PQFN (5x6) package footprint and is the only substitute offering true drop-in compatibility. Infineon OptiMOS™ parts use PG-TDSON-8-5 or PG-TDSON-8-6 packages, and the Nexperia part uses LFPAK56, all requiring PCB layout verification and potential redesign.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET on or off. The FDMS8670 specifies 63 nC at 10V. Substitute parts range from 26 nC (BSC0902NSATMA1) to 84 nC (FDMS7660). Lower gate charge reduces gate drive power requirements and enables faster switching. Higher gate charge increases gate drive circuit demands. Gate drive circuit evaluation is required when gate charge differs significantly from the original specification.

Q: What is the significance of input capacitance (Ciss) variation among substitutes?

A: Input capacitance affects gate drive circuit impedance and switching speed. The FDMS8670 specifies 3940 pF at 15V. Substitute parts range from 1700 pF (BSC0902NSATMA1) to 6100 pF (BSC025N03LSGATMA1). Lower input capacitance reduces gate drive power requirements and enables faster switching transitions. Higher input capacitance increases gate drive circuit demands. Gate drive circuit design review is necessary when input capacitance differs substantially.

Q: Are all substitute parts RoHS3 compliant?

A: The Infineon OptiMOS™ parts (BSC025N03LSGATMA1, BSC0901NSATMA1, BSC0902NSATMA1) and the Nexperia part (PSMN2R5-30YL,115) are explicitly specified as RoHS3 compliant. The FDMS7660 does not include RoHS status in the provided specifications. All parts are REACH unaffected and classified as EAR99 for export control purposes.

Q: Which substitute offers the best thermal performance?

A: The PSMN2R5-30YL,115 delivers the highest power dissipation rating at case temperature (88W at Tc) and the widest operating temperature range (-55 to 175°C). The BSC025N03LSGATMA1 provides 83W at Tc. The FDMS7660 and original FDMS8670 both specify 78W at Tc. Thermal performance selection depends on application heat dissipation requirements and ambient temperature conditions.

Q: Can the PSMN2R5-30YL,115 be used in existing PCB designs?

A: The PSMN2R5-30YL,115 uses the LFPAK56 package, which differs significantly from the original 8-PQFN (5x6) package. Direct PCB replacement is not possible without layout redesign. This part is suitable only for applications where package change is acceptable and PCB layout can be modified.

Q: What is the product status significance for long-term supply?

A: Product status indicates manufacturer support and availability. Active status (FDMS7660, BSC0901NSATMA1, BSC0902NSATMA1) ensures long-term availability and ongoing manufacturing support. Not For New Designs status (BSC025N03LSGATMA1, PSMN2R5-30YL,115) indicates limited future availability and is not recommended for new product designs. Obsolete status (FDMS8670) indicates end-of-life with no further manufacturing.