FDMS8660AS N-Channel 30V 28A/49A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8660AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 28A at Ta and 49A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® series. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	28	A
Continuous Drain Current @ 25°C (Tc)	49	A
RDS(on) Max @ Id, Vgs	2.1 mOhm @ 28A, 10V	mOhm
Gate Charge (Qg) Max @ Vgs	83	nC @ 10V
Input Capacitance (Ciss) Max @ Vds	5865	pF @ 15V
Power Dissipation Max (Ta)	2.5	W
Power Dissipation Max (Tc)	104	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-PQFN (5x6)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution of the FDMS8660AS is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-source voltage (Vdss) must equal or exceed 30V
Continuous drain current at Ta must meet or exceed 28A
RDS(on) characteristics must support equivalent switching performance
Gate charge and input capacitance must be compatible with existing gate drive circuitry
Operating temperature range must span -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Surface mount package type (8-PQFN, 8-PowerTDFN, or equivalent footprint)
Moisture sensitivity level MSL 1 (Unlimited)

Regulatory Compliance:

RoHS3 compliance preferred for new designs
REACH unaffected status required

Substitute parts are grouped into three categories based on these criteria: direct electrical equivalents from onsemi (same series), cross-manufacturer equivalents (Infineon, Texas Instruments, Nexperia), and functional alternatives with comparable electrical performance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Ta (A)	Id @ Tc (A)	RDS(on) Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Package	Status
FDMS8660AS	onsemi	30	28	49	2.1 @ 28A, 10V	83 @ 10V	5865 @ 15V	8-PQFN (5x6)	Obsolete
FDMS7660AS	onsemi	30	26	42	2.4 @ 25A, 10V	90 @ 10V	6120 @ 15V	8-PQFN (5x6)	Active
NTMFS4897NFT1G	onsemi	30	17	171	2 @ 22A, 10V	83.6 @ 10V	5660 @ 15V	5-DFN (5x6)	Active
BSC020N03LSGATMA1	Infineon	30	28	100	2 @ 30A, 10V	93 @ 10V	7200 @ 15V	PG-TDSON-8-1	Active
BSC016N03LSGATMA1	Infineon	30	32	100	1.6 @ 30A, 10V	131 @ 10V	10000 @ 15V	PG-TDSON-8-1	Not For New Designs
BSC016N03MSGATMA1	Infineon	30	28	100	1.6 @ 30A, 10V	173 @ 10V	13000 @ 15V	PG-TDSON-8-1	Not For New Designs
BSC020N03MSGATMA1	Infineon	30	25	100	2 @ 30A, 10V	124 @ 10V	9600 @ 15V	PG-TDSON-8-1	Active
BSC0901NSATMA1	Infineon	30	28	100	1.9 @ 30A, 10V	44 @ 10V	2800 @ 15V	PG-TDSON-8-5	Active
CSD16407Q5	Texas Instruments	25	31	100	2.4 @ 25A, 10V	18 @ 4.5V	2660 @ 12.5V	8-VSONP (5x6)	Active
PSMN2R0-30YL,115	Nexperia	30	—	100	2 @ 15A, 10V	64 @ 10V	3980 @ 12V	LFPAK56	Not For New Designs

Engineering Selection Recommendations

Primary Recommendation: FDMS7660AS

The FDMS7660AS is the closest functional equivalent to the FDMS8660AS. Both devices are manufactured by onsemi within the PowerTrench® series, share identical 30V Vdss rating, and use the same 8-PQFN (5x6) package footprint. The FDMS7660AS is currently in active production status, addressing the obsolescence of the FDMS8660AS. Continuous drain current at Ta is 26A (versus 28A), representing a 7% reduction in Ta rating. RDS(on) is marginally higher at 2.4 mOhm. The FDMS7660AS is RoHS3 compliant and carries MSL 1 rating, matching the original part's environmental specifications.

Secondary Recommendation: BSC020N03LSGATMA1

The BSC020N03LSGATMA1 from Infineon Technologies is an active-status alternative offering identical 30V Vdss and 28A Ta continuous drain current. This OptiMOS™ series device provides superior Tc performance (100A versus 49A) and lower RDS(on) at 2 mOhm. The package is PG-TDSON-8-1, which maintains 8-pin surface mount compatibility with 5x6 footprint dimensions. RoHS3 compliance and MSL 1 rating are confirmed. Gate charge is 93 nC, slightly elevated from the original 83 nC, requiring gate drive circuit verification.

Alternative for High-Current Applications: BSC0901NSATMA1

The BSC0901NSATMA1 from Infineon provides 28A Ta rating matching the FDMS8660AS with significantly improved Tc performance (100A). This device features the lowest gate charge (44 nC) and input capacitance (2800 pF) among substitutes, enabling faster switching transitions. The PG-TDSON-8-5 package maintains 8-pin surface mount configuration. Active production status and RoHS3 compliance are confirmed.

Not Recommended for New Designs:

Parts designated "Not For New Designs" (BSC016N03LSGATMA1, BSC016N03MSGATMA1, PSMN2R0-30YL,115) are suitable only for legacy system maintenance and repair. These parts carry end-of-life or restricted status and should not be selected for new product development.

Voltage Derating Consideration:

The CSD16407Q5 from Texas Instruments operates at 25V Vdss, which is below the 30V specification of the FDMS8660AS. This part is suitable only for applications where the actual operating voltage does not exceed 25V and where the 31A Ta rating is sufficient.

Frequently Asked Questions (FAQ)

Q: Can the FDMS7660AS directly replace the FDMS8660AS without PCB modifications?

A: Yes. Both devices use the 8-PQFN (5x6) package with identical pin assignments and footprints. No PCB layout changes are required. However, the FDMS7660AS has a 26A Ta rating versus 28A for the original part. Verify that your application's continuous current requirement does not exceed 26A at ambient temperature.

Q: What is the primary difference between the onsemi FDMS7660AS and the Infineon BSC020N03LSGATMA1?

A: Both parts meet the 30V/28A Ta specification. The key differences are: (1) Package type—FDMS7660AS uses 8-PQFN while BSC020N03LSGATMA1 uses PG-TDSON-8-1, requiring different PCB footprints; (2) Gate charge—FDMS7660AS at 83 nC versus BSC020N03LSGATMA1 at 93 nC; (3) Manufacturer—onsemi versus Infineon, affecting supply chain and qualification requirements.

Q: Why does the FDMS8660AS show as obsolete?

A: The FDMS8660AS is listed as obsolete by onsemi, meaning the manufacturer has discontinued production and will not accept new orders. The FDMS7660AS is the recommended active-status replacement within the same product family.

Q: Can I use the CSD16407Q5 as a substitute?

A: The CSD16407Q5 operates at 25V Vdss, which is 5V below the FDMS8660AS specification. This part is suitable only if your circuit operates at 25V or lower. The 31A Ta rating exceeds the original 28A requirement, but the voltage limitation makes this a conditional substitute only.

Q: What does "Not For New Designs" mean for parts like BSC016N03MSGATMA1?

A: "Not For New Designs" indicates that the manufacturer (Infineon) has restricted this part to legacy applications and maintenance only. These parts may have limited availability and extended lead times. New product designs should not incorporate these parts; use active-status alternatives instead.

Q: How do I verify gate drive circuit compatibility when switching from FDMS8660AS to a substitute?

A: Compare the gate charge (Qg) and input capacitance (Ciss) specifications. The FDMS8660AS has Qg of 83 nC and Ciss of 5865 pF. Substitutes with significantly different values (such as CSD16407Q5 at 18 nC Qg) may require gate drive circuit adjustments. Consult the gate drive IC datasheet to confirm compatibility with the substitute part's capacitive and charge requirements.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended active-status substitutes (FDMS7660AS, BSC020N03LSGATMA1, BSC020N03MSGATMA1, BSC0901NSATMA1, CSD16407Q5) are confirmed RoHS3 compliant. Parts marked "Not For New Designs" are also RoHS3 compliant but should not be used in new designs.

Q: What is the difference between Ta and Tc current ratings?

A: Ta (ambient temperature) rating applies when the device is cooled by ambient air circulation. Tc (case temperature) rating applies when the device is mounted on a heatsink or PCB with controlled thermal management. The FDMS8660AS is rated 28A at Ta and 49A at Tc. Substitutes typically offer higher Tc ratings (100A) due to improved thermal design, but Ta ratings vary by part.

Q: Can I use multiple lower-rated devices in parallel to replace the FDMS8660AS?

A: Parallel MOSFET configurations require careful gate drive design and current balancing. This approach is not recommended as a direct substitution strategy. Select a single substitute part with equivalent or superior ratings instead.

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