FDMS86569-F085 Equivalent & Substitute Parts

Part Overview

The FDMS86569-F085 is an N-Channel 60V 65A Power MOSFET manufactured by onsemi in the PowerTrench® series. This device is designed for surface mount applications requiring high current switching capability with a maximum power dissipation of 100W at junction temperature. The part is classified as Obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement continuity. Automotive-grade qualification (AEC-Q101) and ROHS3 compliance ensure suitability for regulated applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	65	A (Tc)
On-Resistance (Rds On Max) @ 65A, 10V	5.6	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	54	nC
Input Capacitance (Ciss Max) @ 30V	2560	pF
Power Dissipation (Max)	100	W (Tj)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	8-PowerVDFN	Surface Mount
Qualification	AEC-Q101	Automotive

Substitute Part Grouping Explanation

Substitution of the FDMS86569-F085 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 60V
Continuous drain current capability must support the application requirements
On-resistance characteristics must be compatible with thermal and efficiency constraints
Gate charge and input capacitance affect switching performance and drive circuit requirements
Operating temperature range must encompass -55°C to 175°C (TJ)

Mechanical Compatibility Criteria:

Surface mount mounting type required
Package footprint compatibility with 8-PowerVDFN or equivalent land pattern
Moisture sensitivity level MSL 1 (Unlimited) for storage and handling

Compliance Requirements:

AEC-Q101 automotive qualification
ROHS3 compliance
REACH unaffected status

The substitute parts listed below meet the voltage and temperature specifications while maintaining automotive-grade qualification. Variations in current rating, on-resistance, and package geometry reflect design trade-offs in the substitute devices.

Parameter Comparison

Parameter	FDMS86569-F085	NVMFS5C670NLWFAFT1G	BSZ067N06LS3GATMA1	Unit
Manufacturer	onsemi	onsemi	Infineon Technologies	—
FET Type	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	65 (Tc)	71 (Tc)	20 (Tc)	A
On-Resistance (Rds On Max) @ 10V	5.6 @ 65A	6.1 @ 35A	6.7 @ 20A	mOhm
Gate Threshold Voltage (Vgs(th) Max)	4 @ 250µA	2 @ 53µA	2.2 @ 35µA	V
Gate Charge (Qg Max) @ 10V	54	20	67	nC
Input Capacitance (Ciss Max)	2560 @ 30V	1400 @ 25V	5100 @ 30V	pF
Power Dissipation (Max)	100 (Tj)	61 (Tc)	69 (Tc)	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 150	°C (TJ)
Product Status	Obsolete	Active	Active	—
Qualification	AEC-Q101	AEC-Q101	Not specified	—
Package Type	8-PowerVDFN	8-PowerTDFN, 5 Leads	8-PowerVDFN	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

NVMFS5C670NLWFAFT1G (onsemi): This substitute maintains the same voltage rating (60V) and operating temperature range (-55°C to 175°C). The continuous drain current at case temperature (71A Tc) exceeds the original specification (65A Tc), providing margin for thermal performance. Gate charge is significantly lower (20 nC vs. 54 nC), reducing drive circuit power requirements. Input capacitance is reduced (1400 pF vs. 2560 pF), improving switching speed. The device is Active status with AEC-Q101 qualification and ROHS3 compliance. Package geometry differs (5-DFN vs. 8-PowerVDFN), requiring PCB layout modification. This substitute is suitable for applications where the lower gate charge and input capacitance provide performance benefits and the package change is accommodated in design.

BSZ067N06LS3GATMA1 (Infineon Technologies): This substitute maintains the same voltage rating (60V) and package type (8-PowerVDFN). Operating temperature range is -55°C to 150°C, which does not extend to the original 175°C maximum. Continuous drain current at case temperature (20A Tc) is significantly lower than the original specification (65A Tc), limiting suitability to lower-current applications. Gate charge is higher (67 nC vs. 54 nC), increasing drive circuit power requirements. Input capacitance is substantially higher (5100 pF vs. 2560 pF), affecting switching performance. The device is Active status with ROHS3 compliance. Automotive qualification (AEC-Q101) is not specified in the provided data. This substitute is applicable only to applications with reduced current requirements and where the lower maximum temperature is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the NVMFS5C670NLWFAFT1G directly replace the FDMS86569-F085 on the existing PCB?

A: Direct PCB replacement is not possible due to package differences. The FDMS86569-F085 uses an 8-PowerVDFN package, while the NVMFS5C670NLWFAFT1G uses an 8-PowerTDFN with 5 leads. PCB layout and land pattern modification is required. The BSZ067N06LS3GATMA1 uses the same 8-PowerVDFN package and may allow direct footprint compatibility, subject to pin assignment verification.

Q: What are the key electrical differences between these substitutes?

A: The NVMFS5C670NLWFAFT1G offers lower gate charge (20 nC) and input capacitance (1400 pF), improving switching efficiency and reducing drive circuit stress. The BSZ067N06LS3GATMA1 has higher gate charge (67 nC) and significantly higher input capacitance (5100 pF), requiring more robust gate drive capability. Continuous current ratings differ substantially: NVMFS5C670NLWFAFT1G supports 71A (Tc), while BSZ067N06LS3GATMA1 supports only 20A (Tc).

Q: Are both substitutes suitable for automotive applications?

A: The NVMFS5C670NLWFAFT1G carries AEC-Q101 qualification, meeting automotive standards. The BSZ067N06LS3GATMA1 does not specify AEC-Q101 qualification in the provided data. For automotive applications requiring AEC-Q101 compliance, the NVMFS5C670NLWFAFT1G is the appropriate choice.

Q: What is the impact of lower continuous current rating in the BSZ067N06LS3GATMA1?

A: The BSZ067N06LS3GATMA1 continuous drain current (20A Tc) is substantially lower than the original FDMS86569-F085 (65A Tc). This substitute is suitable only for applications with significantly reduced current requirements. Thermal management and power dissipation calculations must be re-evaluated for the specific application.

Q: How do gate charge differences affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. The NVMFS5C670NLWFAFT1G (20 nC) requires less gate drive energy than the original (54 nC), potentially reducing driver IC power consumption and heat generation. The BSZ067N06LS3GATMA1 (67 nC) requires more gate drive energy, necessitating verification that the existing gate driver can supply adequate current and voltage.

Q: Is the operating temperature range difference significant?

A: The FDMS86569-F085 and NVMFS5C670NLWFAFT1G both support -55°C to 175°C (TJ). The BSZ067N06LS3GATMA1 maximum temperature is 150°C (TJ), which is 25°C lower. For applications operating near or above 150°C junction temperature, the BSZ067N06LS3GATMA1 is not suitable.

Q: What moisture sensitivity considerations apply to these parts?

A: All three devices have Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage practices for surface mount components apply.

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