FDMS86550 N-Channel MOSFET 60V 32A/155A Equivalent & Substitute Parts

Part Overview

The FDMS86550 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with continuous drain current of 32A at Ta and 155A at Tc. This device operates in the PowerTrench® series and is housed in an 8-PQFN (5x6) surface mount package. The part is Active status and RoHS3 compliant.

Equivalent and substitute parts are identified when designs require alternative sourcing, inventory availability, or when specific performance characteristics within defined electrical and mechanical parameters align with application requirements. Substitute parts must maintain compatibility across critical parameters including voltage rating, current capability, package type, and thermal characteristics.

Substiute Parts

FDMS86550

onsemiIn Stock: 1540FDMS86550 Datasheet

Current PartRFQ

BSC014N06NSATMA1

Infineon TechnologiesIn Stock: 25124BSC014N06NSATMA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDMS86550 are identified based on electrical and mechanical compatibility within the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 60V to ensure safe operation within the same voltage domain.

Current Capability: Substitute parts must support continuous drain current specifications that meet or exceed the application requirements. The FDMS86550 provides 32A at Ta and 155A at Tc; substitute parts must deliver comparable current handling in both ambient and case temperature conditions.

On-Resistance (Rds On): Substitute parts must maintain Rds On values within acceptable ranges to ensure equivalent power dissipation and thermal performance. Lower Rds On values indicate improved efficiency.

Package Compatibility: Substitute parts must use compatible surface mount packages (8-PowerTDFN or equivalent footprint) to ensure PCB layout compatibility.

Thermal Performance: Substitute parts must support the same operating temperature range (-55°C to 150°C TJ) and deliver equivalent power dissipation ratings.

Compliance and Certifications: Substitute parts must maintain RoHS3 compliance, MSL Level 1 rating, and REACH unaffected status to meet regulatory and supply chain requirements.

The BSC014N06NSATMA1 from Infineon Technologies qualifies as a substitute based on these parameters.

Parameter Comparison

Engineering Selection Recommendations

Both the FDMS86550 and BSC014N06NSATMA1 are Active status products with full RoHS3 compliance and MSL Level 1 ratings, making them suitable for production environments with unlimited moisture sensitivity handling.

The FDMS86550 delivers higher continuous drain current at case temperature (155A vs. 100A), making it the preferred choice for applications requiring maximum current capacity at elevated case temperatures. The higher gate charge (154 nC) and input capacitance (11530 pF) indicate increased switching losses compared to the substitute.

The BSC014N06NSATMA1 provides lower on-resistance (1.45 mOhm vs. 1.65 mOhm), lower gate charge (89 nC vs. 154 nC), and lower input capacitance (6500 pF vs. 11530 pF), resulting in improved switching efficiency and reduced gate drive requirements. The lower threshold voltage (2.8V vs. 4.5V) enables faster switching response. However, the continuous drain current at case temperature is reduced to 100A.

Selection between these parts depends on whether the application prioritizes maximum current capacity or switching efficiency. Both parts maintain identical voltage ratings, operating temperature ranges, and case temperature power dissipation (156W), ensuring thermal compatibility in equivalent thermal management designs.

Frequently Asked Questions (FAQ)

Q: Can the BSC014N06NSATMA1 directly replace the FDMS86550 in all applications?

A: Direct replacement is possible when the application does not require the full 155A continuous drain current at case temperature. The BSC014N06NSATMA1 supports 100A at Tc, which is sufficient for many designs. Both parts share identical voltage ratings (60V), operating temperature ranges (-55°C to 150°C), and case temperature power dissipation (156W). PCB layout compatibility is maintained through identical 8-PowerTDFN packaging.

Q: What are the switching performance differences between these parts?

A: The BSC014N06NSATMA1 exhibits lower gate charge (89 nC vs. 154 nC) and lower input capacitance (6500 pF vs. 11530 pF), resulting in reduced switching losses and faster switching transitions. The lower threshold voltage (2.8V vs. 4.5V) enables faster gate response. These characteristics make the BSC014N06NSATMA1 more suitable for high-frequency switching applications where gate drive efficiency is critical.

Q: Are there package compatibility concerns?

A: Both parts use the 8-PowerTDFN package, ensuring identical PCB footprints and layout compatibility. No package-related design modifications are required for substitution.

Q: Do both parts meet the same compliance requirements?

A: Yes. Both the FDMS86550 and BSC014N06NSATMA1 are RoHS3 compliant, carry MSL Level 1 ratings (unlimited moisture sensitivity), and are REACH unaffected. Both parts are Active status products suitable for current production designs.

Q: What is the primary limitation of the BSC014N06NSATMA1 as a substitute?

A: The continuous drain current at case temperature is reduced from 155A to 100A. Applications requiring the full 155A capacity at elevated case temperatures must use the FDMS86550. For applications operating below 100A at case temperature, this limitation does not apply.

Q: How do the on-resistance values compare?

A: The BSC014N06NSATMA1 provides lower on-resistance (1.45 mOhm @ 50A, 10V vs. 1.65 mOhm @ 32A, 10V), indicating improved conduction efficiency. Lower on-resistance reduces power dissipation during continuous operation, resulting in lower junction temperatures and improved thermal performance in equivalent thermal management designs.