FDMS86520 N-Channel MOSFET 60V 14A/42A Equivalent & Substitute Parts

Part Overview

The FDMS86520 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with continuous drain current of 14A at Ta and 42A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® series. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal performance, while maintaining compatible surface mount packaging and operating temperature ranges.

Substiute Parts

FDMS86520

onsemiIn Stock: 95197FDMS86520 Datasheet

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CSD18533Q5A

Texas InstrumentsIn Stock: 52841CSD18533Q5A Datasheet

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CSD18563Q5AT

Texas InstrumentsIn Stock: 47061CSD18563Q5AT Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDMS86520 are qualified based on the following critical parameters:

Voltage Rating Compatibility: All substitute parts maintain the 60V Vdss rating, ensuring compatibility with the same voltage domain applications.

Drain Current Capability: Substitute parts either match or exceed the continuous drain current specifications at both Ta (ambient) and Tc (case) conditions. The FDMS86520 specifies 14A (Ta) and 42A (Tc); substitute parts CSD18533Q5A and CSD18563Q5AT provide equal or superior current handling.

On-Resistance (Rds On): Substitute parts demonstrate comparable or lower on-resistance values at specified gate-source voltage and drain current conditions, ensuring equivalent or improved switching efficiency and thermal performance.

Gate Charge (Qg): Gate charge values are within comparable ranges, affecting switching speed and driver circuit requirements. Lower gate charge in substitutes may reduce driver stress.

Input Capacitance (Ciss): Input capacitance values are similar across all parts, maintaining consistent gate drive characteristics.

Thermal Performance: Substitute parts provide equal or superior power dissipation ratings at both Ta and Tc conditions.

Package Compatibility: All parts use 8-pin surface mount packages with 5x6mm footprints, maintaining PCB layout compatibility.

Operating Temperature: All parts operate across the -55°C to 150°C temperature range.

Compliance Status: All parts maintain RoHS3 compliance, MSL 1 rating, and REACH unaffected status.

Parameter Comparison

Engineering Selection Recommendations

CSD18533Q5A (Texas Instruments NexFET™ Series)

The CSD18533Q5A is a direct substitute for applications requiring the FDMS86520 specifications. This part exceeds the minimum current requirements with 17A at Ta and 100A at Tc, providing design margin. The lower on-resistance (5.9 mOhm) and reduced gate charge (36 nC) offer improved efficiency and faster switching characteristics. The part maintains full compliance with RoHS3, MSL 1, and REACH requirements. The 8-VSONP package is mechanically compatible with the 8-PowerTDFN footprint.

CSD18563Q5AT (Texas Instruments NexFET™ Series)

The CSD18563Q5AT is suitable for applications where maximum current handling and thermal performance are prioritized. This part delivers 100A continuous drain current at Ta with superior power dissipation capability (116W at Tc). The significantly reduced gate charge (20 nC) and input capacitance (1500 pF) enable faster switching and reduced driver power consumption. This part is appropriate for high-current, high-frequency switching applications. Full compliance with RoHS3, MSL 1, and REACH standards is maintained.

Selection Basis

Both substitute parts are active production devices from Texas Instruments with established supply chain availability. All parts maintain identical operating temperature ranges (-55°C to 150°C), voltage ratings (60V Vdss), and surface mount package compatibility. Selection between substitutes depends on application-specific requirements for current handling, switching frequency, and thermal management. Both substitutes provide performance improvements over the FDMS86520 while maintaining backward compatibility with existing PCB designs.

Frequently Asked Questions (FAQ)

Q: Can the CSD18533Q5A or CSD18563Q5AT be used as direct replacements for the FDMS86520 on existing PCBs?

A: Yes. Both substitute parts use 8-pin surface mount packages with 5x6mm footprints compatible with the FDMS86520 8-PowerTDFN package. Pin configurations and electrical characteristics are compatible for direct substitution. PCB layout modifications are not required.

Q: What is the primary difference between the CSD18533Q5A and CSD18563Q5AT?

A: The CSD18563Q5AT provides higher continuous drain current (100A at Ta) compared to the CSD18533Q5A (17A at Ta). The CSD18563Q5AT also features lower gate charge (20 nC versus 36 nC) and reduced input capacitance (1500 pF versus 2750 pF), making it suitable for high-frequency switching applications. The CSD18533Q5A offers a balance between current capability and gate drive requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The FDMS86520, CSD18533Q5A, and CSD18563Q5AT are all RoHS3 compliant with MSL 1 (unlimited) moisture sensitivity level and REACH unaffected status.

Q: How do the on-resistance values compare across these parts?

A: The FDMS86520 has an on-resistance of 7.4 mOhm at 14A and 10V gate-source voltage. The CSD18533Q5A provides 5.9 mOhm at 18A and 10V, and the CSD18563Q5AT provides 6.8 mOhm at 18A and 10V. Lower on-resistance values reduce power dissipation and heat generation during operation.

Q: What is the significance of gate charge differences?

A: Gate charge affects the speed and power requirements of the gate driver circuit. The FDMS86520 requires 40 nC at 10V, while the CSD18533Q5A requires 36 nC and the CSD18563Q5AT requires only 20 nC. Lower gate charge reduces driver stress and enables faster switching transitions, particularly beneficial in high-frequency applications.

Q: Do all parts operate across the same temperature range?

A: Yes. The FDMS86520, CSD18533Q5A, and CSD18563Q5AT all operate from -55°C to 150°C junction temperature, ensuring compatibility across identical thermal operating conditions.

Q: What is the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current at ambient temperature (25°C), while Tc represents continuous drain current at case temperature. Tc ratings are typically higher due to improved heat dissipation at the case. The FDMS86520 specifies 14A (Ta) and 42A (Tc), while the CSD18533Q5A specifies 17A (Ta) and 100A (Tc).

Q: Are the input capacitance values critical for substitution?

A: Input capacitance affects gate drive circuit design and switching speed. The FDMS86520 has 2850 pF at 30V, the CSD18533Q5A has 2750 pF, and the CSD18563Q5AT has 1500 pF. Lower capacitance values enable faster switching and reduce driver power consumption. Substitutes with lower capacitance are generally advantageous.

Q: What is the maximum gate-source voltage for all parts?

A: All three parts are rated for ±20V maximum gate-source voltage, ensuring compatibility with standard gate driver circuits and protection schemes.

Q: How do power dissipation ratings affect part selection?

A: Power dissipation ratings at Ta and Tc indicate thermal performance. The FDMS86520 dissipates 2.5W at Ta and 69W at Tc. Both substitute parts dissipate 3.2W at Ta and 116W at Tc, providing superior thermal capability and enabling operation at higher current levels or frequencies without exceeding thermal limits.