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FDMS86200DC N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The FDMS86200DC is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with 9.3A continuous drain current at 25°C ambient temperature (28A at case temperature). This device is housed in an 8-PQFN (5x6) surface mount package and is part of the Dual Cool™ and PowerTrench® series. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).
Equivalent and substitute parts are identified when alternative components meet or exceed the electrical specifications and mechanical requirements of the primary device, enabling circuit designers to source components from multiple suppliers or manage inventory constraints without redesign.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 150 | V |
| Continuous Drain Current @ 25°C (Ta) | 9.3 | A |
| Continuous Drain Current @ Case (Tc) | 28 | A |
| On-Resistance (Rds On) @ 9.3A, 10V | 17 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 42 | nC |
| Input Capacitance (Ciss) @ 75V | 2955 | pF |
| Power Dissipation @ Case (Tc) | 125 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-PQFN (5x6) | Surface Mount |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the FDMS86200DC is determined by equivalence in the following critical parameters:
Voltage Rating: The substitute part must maintain a Drain-to-Source Voltage (Vdss) rating of 150V or greater to ensure safe operation in the same circuit topology.
Current Capability: The substitute part must support continuous drain current at case temperature (Tc) equal to or exceeding 28A to handle the thermal and electrical load of the primary application.
On-Resistance (Rds On): The substitute part must exhibit on-resistance characteristics compatible with the switching and conduction losses of the original design. The FDMS86200DC specifies 17mOhm at 9.3A and 10V gate drive.
Gate Drive Voltage: The substitute part must operate with standard gate drive voltages (10V nominal) and maintain gate threshold voltage (Vgs(th)) within the 4V specification range.
Package Compatibility: The substitute part must be housed in a surface mount package with equivalent thermal and electrical performance characteristics, specifically the 8-PowerTDFN package family.
Compliance and Status: Both the primary part and substitute must maintain active product status and RoHS3 compliance to ensure long-term availability and regulatory adherence.
Parameter Comparison
| Parameter | FDMS86200DC (onsemi) | BSC190N15NS3GATMA1 (Infineon) | Unit |
|---|---|---|---|
| Manufacturer | onsemi | Infineon Technologies | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 150 | 150 | V |
| Continuous Drain Current @ Tc | 28 | 50 | A |
| On-Resistance (Rds On) @ 10V | 17 @ 9.3A | 19 @ 50A | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 4 @ 250µA | 4 @ 90µA | V |
| Gate Charge (Qg) @ 10V | 42 | 31 | nC |
| Input Capacitance (Ciss) @ 75V | 2955 | 2420 | pF |
| Power Dissipation @ Tc | 125 | 125 | W |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C |
| Package Type | 8-PQFN (5x6) | PG-TDSON-8-1 | Surface Mount |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| Product Status | Active | Active | — |
Engineering Selection Recommendations
BSC190N15NS3GATMA1 (Infineon Technologies OptiMOS™ Series)
The BSC190N15NS3GATMA1 is a direct functional equivalent to the FDMS86200DC. Both devices share identical voltage ratings (150V Vdss), identical operating temperature ranges (-55°C to 150°C), and identical maximum power dissipation at case temperature (125W). Both parts maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity classification, ensuring regulatory and supply chain compatibility.
The BSC190N15NS3GATMA1 provides superior continuous drain current capability at case temperature (50A versus 28A), lower gate charge (31nC versus 42nC), and reduced input capacitance (2420pF versus 2955pF). These characteristics result in lower switching losses and improved thermal efficiency in high-frequency applications.
On-resistance specifications are comparable: 19mOhm at 50A and 10V gate drive for the Infineon part versus 17mOhm at 9.3A and 10V for the onsemi part. Gate threshold voltage remains consistent at 4V for both devices.
Both parts are housed in 8-PowerTDFN surface mount packages with equivalent thermal performance. The primary distinction is the package designation (8-PQFN versus PG-TDSON-8-1), which reflects manufacturer nomenclature for the same physical form factor.
Selection between these parts is determined by supplier availability, inventory status, and application-specific thermal requirements. The Infineon part is suitable for applications requiring higher current capacity or lower switching losses.
Frequently Asked Questions (FAQ)
Q: Can the BSC190N15NS3GATMA1 directly replace the FDMS86200DC in existing circuit designs?
A: Yes. Both devices share identical voltage ratings (150V), operating temperature ranges (-55°C to 150°C), and power dissipation limits (125W at case temperature). The BSC190N15NS3GATMA1 provides higher continuous drain current (50A versus 28A) and lower gate charge, making it suitable for direct substitution. PCB layout and thermal management considerations remain unchanged due to equivalent package form factors.
Q: What are the package differences between the FDMS86200DC and BSC190N15NS3GATMA1?
A: The FDMS86200DC uses an 8-PQFN (5x6) package designation, while the BSC190N15NS3GATMA1 uses a PG-TDSON-8-1 package designation. Both are 8-pin surface mount packages in the PowerTDFN family with equivalent physical dimensions, pin configurations, and thermal characteristics. Footprints are compatible for direct PCB substitution.
Q: How do the on-resistance specifications compare between these parts?
A: The FDMS86200DC specifies 17mOhm on-resistance at 9.3A and 10V gate drive. The BSC190N15NS3GATMA1 specifies 19mOhm on-resistance at 50A and 10V gate drive. The difference reflects measurement conditions at different current levels. At equivalent operating points, both devices exhibit comparable conduction losses.
Q: Are both parts RoHS3 compliant?
A: Yes. Both the FDMS86200DC and BSC190N15NS3GATMA1 are RoHS3 compliant with MSL 1 (unlimited) moisture sensitivity levels. Both parts are REACH unaffected and classified under ECCN EAR99 for export purposes.
Q: What is the significance of gate charge differences between these parts?
A: The BSC190N15NS3GATMA1 exhibits lower gate charge (31nC versus 42nC at 10V), resulting in reduced switching losses and faster switching transitions. This characteristic is advantageous in high-frequency switching applications and reduces driver power consumption. The lower gate charge does not affect compatibility or substitution suitability.
Q: Can these parts be used interchangeably in high-temperature applications?
A: Yes. Both devices maintain identical operating temperature ranges from -55°C to 150°C junction temperature (TJ). Thermal management and PCB layout practices remain consistent between the two parts. The higher current capability of the BSC190N15NS3GATMA1 may provide improved thermal margin in high-power applications.
Q: What compliance certifications apply to both parts?
A: Both the FDMS86200DC and BSC190N15NS3GATMA1 are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Both parts maintain active product status with unlimited availability through authorized distributors.
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