FDMS86101A N-Channel 100V 13A/60A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS86101A is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 100V drain-to-source voltage with continuous drain current of 13A at Ta and 60A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and is currently in Active product status. The part is ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Substitute parts are necessary when the FDMS86101A becomes unavailable, when alternative manufacturers are required for supply chain diversification, or when design requirements necessitate different electrical performance characteristics within compatible parameter ranges. All substitute parts listed maintain compatibility with the core electrical specifications and mounting requirements of the original device.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	13	A
Continuous Drain Current @ 25°C (Tc)	60	A
RDS(on) Max @ Id, Vgs	8 mOhm @ 13A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) Max	4	V @ 250µA
Gate Charge (Qg) Max @ Vgs	58	nC @ 10V
Input Capacitance (Ciss) Max @ Vds	4120	pF @ 50V
Power Dissipation Max (Ta)	2.5	W
Power Dissipation Max (Tc)	104	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-PQFN (5x6)	Surface Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitute parts for the FDMS86101A are grouped based on the following critical parameters that determine functional compatibility:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current: 13A (Ta) minimum or 60A (Tc) minimum
RDS(on) characteristics: 8-10 mOhm range at 10V gate drive
Gate Threshold Voltage: 2.4V to 4.5V range
Operating Temperature: -55°C to 150°C minimum
Mounting Type: Surface Mount
Package Class: 8-pin PowerTDFN or equivalent footprint

Substitution Logic: Parts are considered equivalent when they maintain the 100V Vdss rating, support the required continuous drain current specifications, and operate within the specified temperature range. RDS(on) values within 8-11 mOhm at 10V gate drive are acceptable for direct substitution. Gate charge and input capacitance variations are acceptable provided they do not exceed 104 nC and 7400 pF respectively at the specified measurement conditions.

Parameter Comparison

Parameter	FDMS86101A (onsemi)	BSC082N10LSGATMA1 (Infineon)	BSC098N10NS5ATMA1 (Infineon)	BSZ097N10NS5ATMA1 (Infineon)	CSD19531Q5AT (TI)	STL100N10F7 (STMicroelectronics)	STL110N10F7 (STMicroelectronics)
Vdss (V)	100	100	100	100	100	100	100
Id @ Ta (A)	13	13.8	—	8	100	—	—
Id @ Tc (A)	60	100	60	40	100	80	107
RDS(on) Max @ 10V (mOhm)	8	8.2	9.8	9.7	6.4	7.3	6
Vgs(th) Max (V)	4	2.4	3.8	3.8	3.3	4	4.5
Qg Max @ 10V (nC)	58	104	28	28	48	80	72
Ciss Max @ 50V (pF)	4120	7400	2100	2080	3870	5680	5117
Power Dissipation Max @ Tc (W)	104	156	69	69	125	100	136
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 175
Package	8-PQFN (5x6)	PG-TDSON-8-1	PG-TDSON-8-7	PG-TSDSON-8-FL	8-VSONP (5x6)	PowerFlat™ (5x6)	PowerFlat™ (5x6)
Product Status	Active	Not For New Designs	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Affected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Primary Recommendation: BSC098N10NS5ATMA1 (Infineon Technologies)

The BSC098N10NS5ATMA1 provides the closest electrical match to the FDMS86101A with identical 100V Vdss rating and 60A continuous drain current at Tc. RDS(on) of 9.8 mOhm at 10V is within acceptable tolerance. Product status is Active, ensuring long-term availability. ROHS3 compliance and REACH Unaffected status align with the original part. Gate charge of 28 nC is significantly lower than the FDMS86101A, resulting in improved switching efficiency. This part is recommended for new designs requiring direct functional replacement.

Secondary Recommendation: STL100N10F7 (STMicroelectronics)

The STL100N10F7 offers superior RDS(on) performance at 7.3 mOhm and higher continuous drain current of 80A at Tc. Extended operating temperature range to 175°C provides additional thermal margin. PowerFlat™ package (5x6) maintains footprint compatibility. Product status is Active with ROHS3 compliance and REACH Unaffected status. Higher power dissipation capability (100W at Tc) supports demanding applications. Gate charge of 80 nC is higher than the original, requiring consideration in high-frequency switching applications.

Alternative Recommendation: CSD19531Q5AT (Texas Instruments)

The CSD19531Q5AT from the NexFET™ series delivers exceptional RDS(on) performance at 6.4 mOhm and 100A continuous drain current at Ta. Power dissipation capability of 125W at Tc exceeds the original specification. Product status is Active with ROHS3 compliance. REACH Affected status requires verification against specific application requirements. 8-VSONP (5x6) package maintains footprint compatibility. This part is suitable for applications requiring maximum current handling and minimum on-resistance.

Not Recommended for New Designs: BSC082N10LSGATMA1 (Infineon Technologies)

Although electrically compatible with 100V Vdss and 13.8A continuous drain current at Ta, this part carries a "Not For New Designs" product status. Infineon has discontinued this device for new applications. Use only for legacy system maintenance or repair applications where supply chain continuity is critical.

Voltage Derating Consideration: BSZ084N08NS5ATMA1 and BSZ110N08NS5ATMA1

Both Infineon BSZ series parts are rated for 80V Vdss, which is below the 100V specification of the FDMS86101A. These parts are not suitable for direct substitution in applications requiring the full 100V rating. Use only in applications where maximum operating voltage is confirmed to be 80V or lower.

Frequently Asked Questions (FAQ)

Q: Can I use BSC082N10LSGATMA1 as a substitute for FDMS86101A?

A: The BSC082N10LSGATMA1 is electrically compatible with matching 100V Vdss and similar RDS(on) characteristics. However, Infineon has designated this part as "Not For New Designs," indicating end-of-life status. Use only for legacy system repairs or when supply chain continuity for existing products is required. For new designs, select BSC098N10NS5ATMA1 or STL100N10F7.

Q: What is the difference between the 8-PQFN and 8-TDSON packages?

A: Both packages are 8-pin surface mount devices with 5x6 mm footprints and are mechanically compatible. The PQFN (Plastic Quad Flat No-Lead) and TDSON (Thermal Dual Small Outline No-Lead) variants differ in internal thermal design and lead frame configuration. Verify PCB layout compatibility with your specific package variant before assembly.

Q: Why does STL100N10F7 have lower RDS(on) than FDMS86101A?

A: Lower RDS(on) results from advanced semiconductor process technology and optimized die design in STMicroelectronics' DeepGATE™ and STripFET™ VII series. This provides improved efficiency and reduced power dissipation. Verify that lower on-resistance does not introduce unintended circuit behavior changes in your specific application.

Q: Can I substitute a part with 80V Vdss rating for the 100V FDMS86101A?

A: No. Parts rated for 80V Vdss (BSZ084N08NS5ATMA1, BSZ110N08NS5ATMA1) are not suitable for applications requiring 100V operation. Using an 80V-rated device in a 100V circuit risks device failure and potential system damage. Use only parts with 100V or higher Vdss rating.

Q: What does "REACH Affected" status mean for CSD19531Q5AT?

A: REACH Affected indicates that the part contains substances of concern under the EU REACH (Registration, Evaluation, Authorization and Restriction of Chemicals) regulation. Verify compliance with your specific application requirements and regional regulations before selection. REACH Unaffected parts (BSC098N10NS5ATMA1, STL100N10F7, STL110N10F7) are preferred for applications with strict chemical compliance requirements.

Q: Is gate charge difference between substitute parts significant?

A: Gate charge variation from 28 nC to 104 nC affects switching speed and driver circuit requirements. Lower gate charge (BSC098N10NS5ATMA1 at 28 nC) enables faster switching with reduced driver power consumption. Higher gate charge (STL100N10F7 at 80 nC) may require higher driver current capability. Verify driver circuit compatibility with selected substitute part specifications.

Q: Can I use CSD19531Q5AT in place of FDMS86101A without circuit modification?

A: CSD19531Q5AT is electrically compatible with 100V Vdss and superior current handling. However, lower RDS(on) (6.4 mOhm vs. 8 mOhm) and higher gate charge (48 nC vs. 58 nC) may affect circuit performance. Conduct thermal analysis to confirm that reduced on-resistance does not create unintended circuit behavior. Driver circuit verification is recommended.

Q: What is the advantage of STL110N10F7 over STL100N10F7?

A: STL110N10F7 provides higher continuous drain current (107A vs. 80A at Tc) and lower RDS(on) (6 mOhm vs. 7.3 mOhm at 10V). Power dissipation capability increases to 136W at Tc. Select STL110N10F7 for applications requiring maximum current handling and efficiency. Both parts maintain identical 100V Vdss rating and 5x6 mm PowerFlat™ footprint.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant, matching the compliance status of the FDMS86101A. All parts are suitable for applications with RoHS requirements.

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