FDMS8560S N-Channel MOSFET 25V 30A/70A Equivalent & Substitute Parts

Part Overview

The FDMS8560S is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 30A at Ta and 70A at Tc. This device is packaged in an 8-PQFN (5x6) surface mount configuration and belongs to the PowerTrench® and SyncFET™ series. The FDMS8560S is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and gate drive specifications while accommodating different package variants within the 8-PowerTDFN family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	25	V
Continuous Drain Current @ 25°C (Ta)	30	A
Continuous Drain Current @ 25°C (Tc)	70	A
Rds On (Max) @ 30A, 10V	1.8	mOhm
Gate Charge (Qg) @ 10V	68	nC
Input Capacitance (Ciss) @ 13V	4350	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	65	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PowerTDFN	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitute parts for the FDMS8560S are selected based on strict electrical and mechanical compatibility criteria. All substitute devices must meet or exceed the following parameters:

Critical Substitution Parameters:

Drain-to-Source Voltage (Vdss): 25V minimum
Continuous Drain Current (Ta): 30A minimum
Continuous Drain Current (Tc): 70A minimum
Rds On (Max) @ 30A, 10V: 1.8mOhm maximum
Operating Temperature Range: -55°C to 150°C minimum
Package Family: 8-PowerTDFN surface mount configuration
FET Type: N-Channel MOSFET technology
RoHS3 Compliance: Required

The substitute parts listed below satisfy these criteria while accommodating variations in gate charge, input capacitance, and specific package designations within the 8-PowerTDFN family. All substitutes are active products with current manufacturing status, providing long-term availability advantages over the obsolete FDMS8560S.

Parameter Comparison

Parameter	FDMS8560S (onsemi)	BSC018NE2LSATMA1 (Infineon)	BSC018NE2LSIATMA1 (Infineon)	CSD16325Q5 (TI)	CSD16414Q5 (TI)
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Texas Instruments	Texas Instruments
Vdss (V)	25	25	25	25	25
Id @ Ta (A)	30	29	29	33	34
Id @ Tc (A)	70	100	100	100	100
Rds On (Max) @ 30A, 10V (mOhm)	1.8	1.8	1.8	2.0	1.9
Qg @ 10V (nC)	68	39	36	25	21
Ciss @ Vds (pF)	4350 @ 13V	2800 @ 12V	2500 @ 12V	4000 @ 12.5V	3650 @ 12.5V
Power Dissipation Ta (W)	2.5	2.5	2.5	3.1	3.2
Power Dissipation Tc (W)	65	69	69	N/A	N/A
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PowerTDFN (5x6)	8-PowerTDFN (PG-TDSON-8-1)	8-PowerTDFN (PG-TDSON-8-6)	8-PowerTDFN (8-VSON-CLIP)	8-PowerTDFN (8-VSON-CLIP)
Product Status	Obsolete	Active	Active	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	N/A	Yes
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	Vendor Undefined	1 (Unlimited)

Engineering Selection Recommendations

BSC018NE2LSATMA1 and BSC018NE2LSIATMA1 (Infineon OptiMOS™ Series)

These Infineon devices provide direct electrical equivalence to the FDMS8560S with identical Rds On specifications (1.8mOhm @ 30A, 10V) and matching power dissipation ratings (2.5W Ta, 69W Tc). Both parts are active products with unlimited moisture sensitivity rating (MSL 1) and full RoHS3 compliance. The primary distinction between these two variants lies in gate charge (39 nC vs. 36 nC) and input capacitance (2800 pF vs. 2500 pF), with the BSC018NE2LSIATMA1 offering lower capacitive loading. These parts accommodate different PCB layout requirements through their PG-TDSON-8-1 and PG-TDSON-8-6 package designations while maintaining the 8-PowerTDFN footprint family. Infineon's active product status ensures long-term availability and supply chain stability.

CSD16325Q5 (Texas Instruments NexFET™ Series)

The CSD16325Q5 exceeds minimum current specifications with 33A continuous drain current at Ta and 100A at Tc. This device features lower gate charge (25 nC @ 4.5V) and reduced input capacitance (4000 pF @ 12.5V) compared to the FDMS8560S, enabling faster switching characteristics. The Rds On specification of 2.0mOhm @ 30A, 8V represents a marginal increase from the 1.8mOhm baseline. This part is suitable for applications where reduced gate drive requirements and improved switching performance justify the minor on-resistance trade-off. Moisture sensitivity level is vendor-undefined, requiring verification against specific application requirements.

CSD16414Q5 (Texas Instruments NexFET™ Series)

The CSD16414Q5 provides the closest electrical match to the FDMS8560S among Texas Instruments offerings, with 34A continuous drain current at Ta and 100A at Tc. This device maintains Rds On at 1.9mOhm @ 30A, 10V, representing minimal deviation from the original specification. Gate charge is significantly reduced to 21 nC @ 4.5V, and input capacitance is 3650 pF @ 12.5V. The CSD16414Q5 is an active product with full RoHS3 compliance and MSL 1 rating, providing superior long-term availability. The lower gate charge enables reduced driver power consumption and improved switching speed in gate-drive-limited applications.

All substitute parts maintain the 8-PowerTDFN surface mount package family, ensuring PCB footprint compatibility. Selection between Infineon and Texas Instruments options depends on existing supply chain relationships, gate drive circuit design parameters, and specific thermal management requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDMS8560S be directly replaced with any of these substitute parts without PCB modifications?

A: All substitute parts maintain the 8-PowerTDFN package family and surface mount configuration. However, specific package variants (PG-TDSON-8-1, PG-TDSON-8-6, 8-VSON-CLIP) may have minor pin assignment or thermal pad differences. PCB layout verification is required to confirm pad alignment and thermal via placement compatibility with the specific substitute part selected.

Q: What are the key electrical differences between the Infineon and Texas Instruments substitutes?

A: The Infineon BSC018NE2LS series maintains identical Rds On (1.8mOhm @ 30A, 10V) and power dissipation (2.5W Ta, 69W Tc) specifications to the FDMS8560S. Texas Instruments CSD16325Q5 and CSD16414Q5 devices feature lower gate charge (25 nC and 21 nC respectively) and reduced input capacitance, enabling faster switching but with slightly higher Rds On values (2.0mOhm and 1.9mOhm). Gate drive circuit design and switching frequency requirements determine which characteristic set is optimal for a given application.

Q: Are all substitute parts suitable for high-temperature applications?

A: All substitute parts support the full -55°C to 150°C operating temperature range, matching the FDMS8560S specification. Thermal management design must account for the specific power dissipation ratings: Infineon parts are rated to 69W at Tc versus the original 65W at Tc. Texas Instruments parts specify power dissipation only at Ta (3.1W and 3.2W respectively), requiring thermal modeling based on case temperature calculations.

Q: What is the significance of the different gate charge specifications among substitutes?

A: Gate charge (Qg) directly impacts gate driver power consumption and switching speed. The FDMS8560S requires 68 nC @ 10V. Infineon substitutes require 39 nC or 36 nC, reducing driver power by approximately 40-47%. Texas Instruments substitutes require only 21-25 nC, reducing driver power by 60-69%. Lower gate charge enables use of lower-power gate drivers and reduces EMI in switching applications. Gate driver circuit design must verify compatibility with the selected substitute's gate charge and threshold voltage specifications.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching transient behavior. The FDMS8560S specifies 4350 pF @ 13V. Infineon substitutes range from 2500-2800 pF, representing 35-42% reduction. Texas Instruments substitutes range from 3650-4000 pF, representing 8-16% reduction. Lower input capacitance reduces gate driver current requirements and improves switching speed. Applications with marginal gate drive capability may benefit from lower-capacitance substitutes, while high-frequency switching circuits may require re-evaluation of PCB layout and driver timing.

Q: What is the product status significance for long-term supply planning?

A: The FDMS8560S is classified as obsolete, indicating onsemi has discontinued production and will not guarantee future availability. All substitute parts are active products with current manufacturing status, ensuring availability for new designs and ongoing production. For applications currently using FDMS8560S, transition to an active substitute part is recommended to avoid supply chain disruption and potential design obsolescence.

Q: Are there moisture sensitivity or compliance differences that affect handling and storage?

A: All Infineon and CSD16414Q5 parts carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions. The CSD16325Q5 has vendor-undefined MSL, requiring clarification from Texas Instruments for specific applications. All parts listed are RoHS3 compliant and REACH unaffected. Infineon parts carry explicit ROHS3 compliance statements. Moisture sensitivity level affects component storage conditions, reflow process requirements, and shelf life management.

Q: Can gate drive voltage specifications differ between the FDMS8560S and substitutes?

A: The FDMS8560S specifies Vgs (Max) of ±12V. Infineon substitutes specify ±20V, providing greater gate drive voltage margin. Texas Instruments CSD16325Q5 specifies +10V/-8V, while CSD16414Q5 specifies +16V/-12V. Gate driver circuits must operate within the specified Vgs (Max) range. Substitutes with higher Vgs (Max) ratings provide additional design margin for gate drive circuit tolerance analysis.

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