FDMS8333L N-Channel MOSFET 40V 22A Equivalent & Substitute Parts

Part Overview

The FDMS8333L is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with 22A continuous drain current at 25°C (Ta). This device is housed in an 8-PQFN (5x6) surface mount package and is part of the PowerTrench® series. The FDMS8333L holds Active product status and is RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Equivalent and substitute parts are identified when alternative MOSFETs meet or exceed the electrical specifications and operational requirements of the primary device while maintaining compatibility with the intended application circuit topology and thermal management strategy.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C (Ta)	22	A
Continuous Drain Current @ 25°C (Tc)	76	A
Rds On (Max) @ Id, Vgs	3.1	mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs	64	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4545	pF @ 20V
Vgs(th) (Max) @ Id	3	V @ 250µA
Vgs (Max)	±20	V
Power Dissipation (Max) (Ta)	2.5	W
Power Dissipation (Max) (Tc)	69	W
Operating Temperature Range (TJ)	-55 to 150	°C
Mounting Type	Surface Mount	-
Package	8-PQFN (5x6)	-
RoHS Status	ROHS3 Compliant	-
MSL Rating	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitute parts for the FDMS8333L are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must maintain a Vdss rating of 40V or greater to ensure safe operation within the same voltage domain.

Current Handling Capability: The substitute must support continuous drain current (Id) at 25°C equal to or exceeding 22A (Ta) to handle the same load conditions without thermal derating.

On-Resistance (Rds On): The substitute must maintain Rds On values at or below 3.1 mOhm at the specified gate voltage (10V) to ensure comparable conduction losses and thermal performance.

Gate Charge (Qg): Lower gate charge values reduce switching losses and driver circuit stress. Substitutes with Qg at or below 64 nC at 10V are preferred.

Input Capacitance (Ciss): Lower input capacitance reduces gate drive requirements and switching speed effects. Substitutes with Ciss at or below 4545 pF at 20V are acceptable.

Threshold Voltage (Vgs(th)): The substitute must maintain threshold voltage compatibility within ±20V gate voltage range to ensure proper gate drive circuit operation.

Package and Mounting: Surface mount packages with thermal performance equivalent to or better than the 8-PQFN (5x6) are acceptable.

Compliance and Status: All substitutes must maintain Active product status and RoHS3 compliance with MSL 1 rating.

Parameter Comparison

Parameter	FDMS8333L (onsemi)	RS1G260MNTB (Rohm)	Unit
Manufacturer	onsemi	Rohm Semiconductor	-
Drain to Source Voltage (Vdss)	40	40	V
Continuous Drain Current @ 25°C (Ta)	22	26	A
Continuous Drain Current @ 25°C (Tc)	76	80	A
Rds On (Max) @ Id, Vgs	3.1 @ 22A, 10V	3.3 @ 26A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	64 @ 10V	44 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	4545 @ 20V	2988 @ 20V	pF
Vgs(th) (Max) @ Id	3 @ 250µA	2.5 @ 1mA	V
Vgs (Max)	±20	±20	V
Power Dissipation (Max) (Ta)	2.5	3	W
Power Dissipation (Max) (Tc)	69	35	W
Operating Temperature Range (TJ)	-55 to 150	-55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	-
Package	8-PQFN (5x6)	8-HSOP	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
MSL Rating	1 (Unlimited)	1 (Unlimited)	-
Product Status	Active	Active	-

Engineering Selection Recommendations

RS1G260MNTB as Substitute for FDMS8333L:

The RS1G260MNTB from Rohm Semiconductor meets the electrical requirements for substitution with the FDMS8333L. Both devices share identical Vdss ratings (40V) and operate within the same temperature range (-55°C to 150°C). The RS1G260MNTB provides higher continuous drain current capability (26A Ta vs. 22A Ta), exceeding the minimum requirement.

On-resistance performance is comparable, with the RS1G260MNTB at 3.3 mOhm versus the FDMS8333L at 3.1 mOhm, representing a 6.5% increase in conduction resistance. Gate charge is lower in the RS1G260MNTB (44 nC vs. 64 nC), reducing switching losses. Input capacitance is also lower (2988 pF vs. 4545 pF), improving gate drive efficiency.

Both devices maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity ratings. Both hold Active product status, ensuring continued availability and support.

Package differences exist: the FDMS8333L uses 8-PQFN (5x6) while the RS1G260MNTB uses 8-HSOP. PCB layout modifications are required for package substitution. Thermal management characteristics differ between packages and must be evaluated for the specific application thermal environment.

Frequently Asked Questions (FAQ)

Q: Can the RS1G260MNTB directly replace the FDMS8333L without circuit modifications?

A: Electrical substitution is valid based on voltage rating, current capability, and gate drive characteristics. However, package differences (8-PQFN vs. 8-HSOP) require PCB layout changes. Thermal performance characteristics differ between packages and must be verified for the application's thermal requirements.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Vdss rating equal to or greater than 40V, (2) continuous drain current (Ta) equal to or exceeding 22A, (3) Rds On at or below 3.1 mOhm at 10V gate voltage, (4) gate voltage range compatibility (±20V), and (5) operating temperature range coverage (-55°C to 150°C).

Q: How do the on-resistance values compare between these devices?

A: The FDMS8333L has Rds On of 3.1 mOhm at 22A and 10V gate voltage. The RS1G260MNTB has Rds On of 3.3 mOhm at 26A and 10V gate voltage. The difference is 0.2 mOhm, representing approximately 6.5% higher resistance in the substitute. This difference results in proportionally higher conduction losses.

Q: What is the significance of lower gate charge in the RS1G260MNTB?

A: The RS1G260MNTB has gate charge of 44 nC compared to 64 nC in the FDMS8333L. Lower gate charge reduces the energy required to switch the device and decreases stress on the gate driver circuit. This results in lower switching losses and improved efficiency in high-frequency applications.

Q: Are there compliance or regulatory differences between these devices?

A: Both devices are RoHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. Both maintain Active product status. No compliance or regulatory differences exist between the two devices.

Q: What package considerations apply to substitution?

A: The FDMS8333L uses 8-PQFN (5x6) packaging while the RS1G260MNTB uses 8-HSOP packaging. These packages have different footprints, lead configurations, and thermal characteristics. PCB redesign is required for package substitution. Thermal performance must be re-evaluated for the specific application environment.

Q: How do the power dissipation ratings compare?

A: The FDMS8333L is rated for 2.5W (Ta) and 69W (Tc) power dissipation. The RS1G260MNTB is rated for 3W (Ta) and 35W (Tc). The substitute has higher ambient temperature dissipation but lower case temperature dissipation, indicating different thermal management characteristics related to package design.

Q: Can the RS1G260MNTB handle higher current than the FDMS8333L?

A: Yes. The RS1G260MNTB supports 26A continuous drain current at 25°C (Ta) compared to 22A for the FDMS8333L. This represents 18% higher current capability, providing additional design margin for current-limited applications.

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