FDMS8027S N-Channel 30V 18A/22A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8027S is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 18A at Ta and 22A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® and SyncFET™ series. The part is Active in product status and RoHS3 compliant. Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage, continuous drain current, on-resistance characteristics, gate charge, and thermal performance specifications within compatible package classes.

Key Parameters

Parameter	FDMS8027S Value	Unit
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain @ 25°C (Ta)	18	A
Current - Continuous Drain @ 25°C (Tc)	22	A
Rds On (Max) @ Id, Vgs	5 mOhm @ 18A, 10V	mOhm
Vgs(th) (Max) @ Id	3	V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	31	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1815	pF @ 15V
Power Dissipation (Max) (Ta)	2.5	W
Power Dissipation (Max) (Tc)	36	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	-
Package / Case	8-PowerTDFN	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitute parts are classified into three categories based on parametric alignment with the FDMS8027S:

Parametric Equivalent: Parts that match all critical electrical specifications including Vdss, continuous drain current at Ta and Tc, Rds On, gate charge, and thermal performance. These parts are direct functional replacements with identical performance characteristics.

Direct Manufacturer Equivalent: Parts from alternative manufacturers that meet or exceed the FDMS8027S specifications in Vdss, continuous drain current, Rds On, and thermal dissipation. These parts may have enhanced performance in specific parameters such as higher Tc current ratings or improved gate charge characteristics.

Similar Manufacturer Parts: Parts that satisfy the core voltage and current requirements but may differ in secondary parameters such as gate charge, input capacitance, or threshold voltage. These parts are suitable for applications where the primary design constraints are Vdss and continuous drain current.

Key Parameters for Substitution Determination:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Ta): Must equal or exceed 18A
Continuous Drain Current (Tc): Must equal or exceed 22A
On-Resistance (Rds On): Must not exceed 5 mOhm @ specified conditions
Operating Temperature Range: Must encompass -55°C to 150°C
Package Class: Must be compatible with 8-PowerTDFN or equivalent surface mount footprint
Compliance: RoHS3 compliance required

Parameter Comparison

Parameter	FDMS8027S	FDMS0312AS	BSC050N03LSGATMA1	CSD17310Q5A	CSD17506Q5A	CSD17510Q5A	CSD17577Q5A	DMT3004LPS-13	RS1E180BNTB	RS1E200GNTB
Manufacturer	onsemi	onsemi	Infineon	TI	TI	TI	TI	Diodes Inc.	Rohm	Rohm
Vdss (V)	30	30	30	30	30	30	30	30	30	30
Id @ Ta (A)	18	18	18	21	—	20	60	21	—	20
Id @ Tc (A)	22	22	80	100	100	100	—	140	60	57
Rds On (mOhm)	5 @ 18A, 10V	5 @ 18A, 10V	5 @ 30A, 10V	5.1 @ 20A, 8V	4 @ 20A, 10V	5.2 @ 20A, 10V	4.2 @ 18A, 10V	3.8 @ 20A, 10V	4.9 @ 18A, 10V	4.6 @ 20A, 10V
Vgs(th) (V)	3 @ 1mA	3 @ 1mA	2.2 @ 250µA	1.8 @ 250µA	1.8 @ 250µA	2.1 @ 250µA	1.8 @ 250µA	3 @ 250µA	2.5 @ 1mA	2.5 @ 1mA
Qg (nC)	31 @ 10V	31 @ 10V	35 @ 10V	11.6 @ 4.5V	11 @ 4.5V	8.3 @ 4.5V	35 @ 10V	43.7 @ 10V	46 @ 10V	16.8 @ 10V
Ciss (pF)	1815 @ 15V	1815 @ 15V	2800 @ 15V	1560 @ 15V	1650 @ 15V	1250 @ 15V	2310 @ 15V	2370 @ 15V	2400 @ 15V	1080 @ 15V
Vgs (Max) (V)	±20	±20	±20	+10, -8	±20	±20	±20	+20, -16	±20	±20
Pd (Ta) (W)	2.5	2.5	2.5	3.1	3.2	3	3	2.7	3	3
Pd (Tc) (W)	36	36	50	—	—	—	53	113	25	25
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	to 150
Package	8-PQFN (5x6)	8-PQFN (5x6)	PG-TDSON-8-5	8-VSONP (5x6)	8-VSONP (5x6)	8-VSONP (5x6)	8-VSONP (5x6)	PowerDI5060-8	CPT3	8-HSOP
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL	1	1	1	1	1	1	1	1	1	1

Engineering Selection Recommendations

FDMS0312AS (onsemi): This part is a parametric equivalent to the FDMS8027S with identical electrical specifications and package footprint. Both devices are manufactured by onsemi within the PowerTrench® and SyncFET™ series. Selection of FDMS0312AS is appropriate when FDMS8027S availability is constrained, as it provides equivalent performance with no design modifications required. Both parts are RoHS3 compliant with MSL 1 rating.

BSC050N03LSGATMA1 (Infineon Technologies): This part meets the core voltage and current requirements with enhanced thermal performance at Tc (80A vs. 22A). The device is housed in a PG-TDSON-8-5 package, which differs from the PQFN footprint. Selection is appropriate for applications requiring higher thermal dissipation capability. RoHS3 compliance and MSL 1 rating are maintained.

CSD17310Q5A (Texas Instruments): This NexFET™ device exceeds the FDMS8027S in continuous drain current at Ta (21A vs. 18A) and Tc (100A vs. 22A). The part is packaged in 8-VSONP (5x6), which is footprint-compatible with the original device. Gate charge is significantly lower (11.6 nC vs. 31 nC), resulting in faster switching characteristics. RoHS3 compliance is confirmed. Note: Vgs maximum is asymmetrical (+10V, -8V) compared to the ±20V rating of FDMS8027S.

CSD17506Q5A (Texas Instruments): This part provides superior on-resistance (4 mOhm vs. 5 mOhm) and lower gate charge (11 nC vs. 31 nC). Continuous drain current at Tc is 100A, significantly exceeding the FDMS8027S specification. The 8-VSONP (5x6) package is footprint-compatible. RoHS3 compliance is confirmed.

CSD17510Q5A (Texas Instruments): This device matches the FDMS8027S in continuous drain current at Ta (20A vs. 18A) with enhanced Tc performance (100A). Gate charge is substantially lower (8.3 nC vs. 31 nC), enabling faster switching. The 8-VSONP (5x6) package is footprint-compatible. RoHS3 compliance is confirmed. REACH status is listed as Affected.

CSD17577Q5A (Texas Instruments): This part provides significantly higher continuous drain current at Ta (60A vs. 18A) with enhanced thermal performance (53W at Tc vs. 36W). Gate charge matches the FDMS8027S (35 nC). The 8-VSONP (5x6) package is footprint-compatible. RoHS3 compliance is confirmed.

CSD17577Q5AT (Texas Instruments): This variant of CSD17577Q5A is identical in electrical specifications but supplied in Cut Tape (CT) & Digi-Reel® packaging. REACH status is listed as Affected.

DMT3004LPS-13 (Diodes Incorporated): This part exceeds the FDMS8027S in continuous drain current at Ta (21A vs. 18A) and Tc (140A vs. 22A) with superior on-resistance (3.8 mOhm vs. 5 mOhm). The PowerDI5060-8 package differs from the PQFN footprint. Selection is appropriate for applications requiring enhanced thermal dissipation. RoHS3 compliance is confirmed.

RS1E180BNTB (Rohm Semiconductor): This part provides significantly higher continuous drain current at Tc (60A vs. 22A) with comparable on-resistance (4.9 mOhm vs. 5 mOhm). The CPT3 package (TO-252-3, DPAK) differs from the PQFN footprint. Gate charge is higher (46 nC vs. 31 nC). RoHS3 compliance is confirmed. Operating temperature range is specified to 150°C without lower bound specification.

RS1E200GNTB (Rohm Semiconductor): This part matches the FDMS8027S in continuous drain current at Ta (20A vs. 18A) with enhanced Tc performance (57A vs. 22A). On-resistance is comparable (4.6 mOhm vs. 5 mOhm). The 8-HSOP package differs from the PQFN footprint. Gate charge is lower (16.8 nC vs. 31 nC). RoHS3 compliance is confirmed. Operating temperature range is specified to 150°C without lower bound specification.

Frequently Asked Questions (FAQ)

Q: Can FDMS0312AS be used as a direct replacement for FDMS8027S without PCB modifications?

A: Yes. FDMS0312AS is a parametric equivalent with identical electrical specifications and 8-PQFN (5x6) package footprint. No design modifications are required.

Q: What is the primary advantage of CSD17310Q5A or CSD17506Q5A over FDMS8027S?

A: Both Texas Instruments parts feature significantly lower gate charge (11.6 nC and 11 nC respectively vs. 31 nC), enabling faster switching transitions and reduced switching losses in high-frequency applications. Both maintain footprint compatibility with the 8-VSONP (5x6) package.

Q: Are the Rohm Semiconductor parts (RS1E180BNTB and RS1E200GNTB) footprint-compatible with FDMS8027S?

A: No. RS1E180BNTB uses a CPT3 package (TO-252-3, DPAK), and RS1E200GNTB uses an 8-HSOP package. Both differ from the 8-PQFN (5x6) footprint of FDMS8027S. PCB layout modifications are required for these substitutions.

Q: Which substitute part provides the highest thermal performance?

A: DMT3004LPS-13 provides the highest thermal dissipation capability with 113W at Tc and 140A continuous drain current at Tc. This part is suitable for high-power applications but requires PCB layout changes due to its PowerDI5060-8 package.

Q: Is CSD17310Q5A suitable for applications with asymmetrical gate voltage requirements?

A: CSD17310Q5A has a maximum gate voltage rating of +10V and -8V, which is asymmetrical compared to the FDMS8027S ±20V rating. Applications requiring ±20V gate drive capability should use alternative parts such as CSD17506Q5A, CSD17510Q5A, or CSD17577Q5A, which maintain the ±20V specification.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, resulting in lower switching losses and reduced heat generation. Parts such as CSD17310Q5A (11.6 nC), CSD17506Q5A (11 nC), and CSD17510Q5A (8.3 nC) enable higher switching frequencies and improved efficiency compared to FDMS8027S (31 nC).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant. All parts maintain MSL 1 (Unlimited) moisture sensitivity level, matching the FDMS8027S specification.

Q: Which substitute parts maintain the exact same package footprint as FDMS8027S?

A: FDMS0312AS, CSD17310Q5A, CSD17506Q5A, CSD17510Q5A, and CSD17577Q5A all use 8-PowerTDFN or 8-VSONP (5x6) packages that are footprint-compatible with the original 8-PQFN (5x6) device. These parts can be substituted with minimal or no PCB layout modifications.

Q: What is the difference between CSD17577Q5A and CSD17577Q5AT?

A: Both parts are electrically identical with 60A continuous drain current at Ta and 53W thermal dissipation at Tc. The primary difference is packaging: CSD17577Q5A is supplied in Tape & Reel (TR), while CSD17577Q5AT is supplied in Cut Tape (CT) & Digi-Reel®. CSD17577Q5AT has REACH status listed as Affected.

Q: Can BSC050N03LSGATMA1 be used in the same PCB layout as FDMS8027S?

A: No. BSC050N03LSGATMA1 uses a PG-TDSON-8-5 package, which differs from the 8-PQFN (5x6) footprint. PCB layout modifications are required. However, the part provides enhanced thermal performance with 80A continuous drain current at Tc.

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