FDMS8025S N-Channel 30V 24A/49A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8025S is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 24A at Ta and 49A at Tc. The device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® and SyncFET™ series. This part carries a "Not For New Designs" product status, indicating that onsemi has discontinued active development and support for this component. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and access components with active manufacturer support and current production availability.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	24	A
Continuous Drain Current @ 25°C (Tc)	49	A
On-Resistance (Rds On) @ 24A, 10V	2.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	3	V
Gate Charge (Qg) @ 10V	47	nC
Input Capacitance (Ciss) @ 15V	3000	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	50	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PQFN (5x6)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FDMS8025S is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The following criteria establish valid substitution relationships:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Ta): 24A minimum
On-Resistance (Rds On): 2.8mOhm or lower at rated conditions
Gate Threshold Voltage (Vgs(th)): Compatible with 3V specification
Operating Temperature Range: -55°C to 150°C minimum
Package Type: 8-pin surface mount configuration (8-PQFN, 8-VSON, or equivalent 8-pin TDSON)
Surface Mount Technology: Required for PCB compatibility
RoHS3 Compliance: Mandatory for regulatory alignment
Moisture Sensitivity Level: MSL 1 or equivalent

Substitution Categories:

Parametric Equivalent: Parts with identical or superior electrical specifications and direct package compatibility.

Similar Manufacturer Parts: Parts from alternative manufacturers (Infineon Technologies, Texas Instruments) that meet or exceed the primary electrical parameters and operate within the same voltage and current ranges, with compatible surface mount packages.

Parameter Comparison

Parameter	FDMS8025S (Main)	FDMS0308AS	BSC030N03MSGATMA1	BSC0902NSATMA1	BSC0902NSIATMA1	CSD17301Q5A	CSD17306Q5A	CSD17501Q5A	CSD17555Q5A
Manufacturer	onsemi	onsemi	Infineon	Infineon	Infineon	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
Vdss (V)	30	30	30	30	30	30	30	30	30
Id @ Ta (A)	24	24	21	24	23	28	24	—	24
Id @ Tc (A)	49	49	100	100	100	100	100	100	100
Rds On (mOhm)	2.8 @ 24A, 10V	2.8 @ 24A, 10V	3.0 @ 30A, 10V	2.6 @ 30A, 10V	2.8 @ 30A, 10V	2.6 @ 25A, 8V	3.7 @ 22A, 8V	2.9 @ 25A, 10V	2.7 @ 25A, 10V
Vgs(th) (V)	3 @ 1mA	3 @ 1mA	2 @ 250µA	2.2 @ 250µA	2 @ 10mA	1.55 @ 250µA	1.6 @ 250µA	1.8 @ 250µA	1.9 @ 250µA
Qg (nC)	47 @ 10V	47 @ 10V	73 @ 10V	26 @ 10V	32 @ 10V	25 @ 4.5V	15.3 @ 4.5V	17 @ 4.5V	28 @ 4.5V
Ciss (pF)	3000 @ 15V	3000 @ 15V	5700 @ 15V	1700 @ 15V	1500 @ 15V	3480 @ 15V	2170 @ 15V	2630 @ 15V	4650 @ 15V
Power Dissipation Ta (W)	2.5	2.5	2.5	2.5	2.5	3.2	3.2	3.2	3
Power Dissipation Tc (W)	50	50	69	48	48	—	—	—	—
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PQFN (5x6)	8-PQFN (5x6)	PG-TDSON-8-1	PG-TDSON-8-6	PG-TDSON-8-6	8-VSONP (5x6)	8-VSONP (5x6)	8-VSONP (5x6)	8-VSONP (5x6)
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Parametric Equivalent Selection:

The FDMS0308AS from onsemi is a parametric equivalent to the FDMS8025S. Both devices share identical electrical specifications including 30V Vdss, 24A continuous drain current at Ta, 49A at Tc, 2.8mOhm Rds On, and 47nC gate charge. The FDMS0308AS is housed in the same 8-PQFN (5x6) package and maintains full compatibility with existing PCB layouts. The critical advantage of the FDMS0308AS is its Active product status, ensuring ongoing manufacturer support, current production availability (38,196 pcs in stock), and long-term supply chain reliability. Both parts are ROHS3 compliant with MSL 1 rating.

Similar Manufacturer Parts Selection:

For applications requiring alternative manufacturer sources or enhanced performance characteristics, the following parts meet or exceed the FDMS8025S specifications:

Infineon OptiMOS™ Series:

BSC0902NSATMA1 and BSC0902NSIATMA1 deliver 24A and 23A continuous drain current respectively at Ta, with superior on-resistance of 2.6mOhm and 2.8mOhm. Both support 100A at Tc and operate within the -55°C to 150°C temperature range. These parts are housed in PG-TDSON-8-6 packages with Active product status and full RoHS3 compliance.
BSC030N03MSGATMA1 provides 21A at Ta and 100A at Tc with 3.0mOhm on-resistance, suitable for applications where higher Tc current capability is prioritized.
BSC0904NSIATMA1 offers 20A at Ta and 78A at Tc with 3.7mOhm on-resistance, appropriate for lower current applications.

Texas Instruments NexFET™ Series:

CSD17301Q5A and CSD17555Q5A both deliver 24A continuous drain current at Ta with 100A at Tc. CSD17301Q5A provides 2.6mOhm on-resistance, while CSD17555Q5A offers 2.7mOhm. Both are housed in 8-VSONP (5x6) packages with Active product status.
CSD17306Q5A matches the 24A Ta specification with 3.7mOhm on-resistance and 100A Tc capability.
CSD17501Q5A provides 100A Tc capability with 2.9mOhm on-resistance, optimized for high current applications.

All substitute parts maintain ROHS3 compliance, MSL 1 rating, and -55°C to 150°C operating temperature range. Selection among these alternatives depends on specific application requirements for on-resistance, gate charge, input capacitance, and package form factor compatibility with existing designs.

Frequently Asked Questions (FAQ)

Q: Can the FDMS0308AS directly replace the FDMS8025S in existing designs?

A: Yes. The FDMS0308AS is a parametric equivalent with identical electrical specifications and package configuration. No PCB layout modifications are required. The primary advantage is the Active product status, ensuring continued availability and manufacturer support.

Q: What is the significance of the "Not For New Designs" status on the FDMS8025S?

A: This designation indicates that onsemi has discontinued active development and support for the FDMS8025S. While existing inventory may be available, the manufacturer does not guarantee long-term supply continuity or technical support. New designs should incorporate parts with Active status, such as the FDMS0308AS or alternative manufacturer equivalents.

Q: Are the Infineon and Texas Instruments parts pin-compatible with the FDMS8025S?

A: The Infineon OptiMOS™ and Texas Instruments NexFET™ parts are functionally equivalent but use different package designations (PG-TDSON-8-6 and 8-VSONP respectively versus 8-PQFN). While all are 8-pin surface mount packages with similar footprints, PCB layout verification is required to confirm mechanical compatibility. Pin assignment and thermal pad configuration may differ.

Q: Which substitute part offers the lowest on-resistance?

A: The BSC0902NSATMA1 and CSD17301Q5A both provide 2.6mOhm on-resistance, representing the lowest values among the listed substitutes. The CSD17555Q5A offers 2.7mOhm, and the FDMS0308AS maintains the original 2.8mOhm specification.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) influences switching speed and driver power requirements. The FDMS8025S and FDMS0308AS both specify 47nC at 10V. Infineon parts range from 17nC to 73nC, while Texas Instruments parts range from 15.3nC to 28nC. Lower gate charge reduces driver stress and switching losses but may require driver circuit optimization. Higher gate charge provides more robust switching characteristics but increases driver power dissipation.

Q: What is the impact of input capacitance (Ciss) differences?

A: Input capacitance affects gate drive requirements and switching transient behavior. The FDMS8025S specifies 3000pF at 15V. Substitute parts range from 1100pF to 5700pF. Lower Ciss reduces gate drive current requirements and switching losses. Higher Ciss may require stronger gate drivers but provides improved noise immunity. Circuit simulation is recommended when Ciss varies significantly from the original specification.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 Compliant status, ensuring regulatory alignment with current environmental and hazardous substance restrictions. All parts also maintain MSL 1 (Unlimited) moisture sensitivity level.

Q: What packaging considerations apply when selecting substitutes?

A: The FDMS8025S uses 8-PQFN (5x6) packaging. Infineon substitutes use PG-TDSON-8-6 packaging, and Texas Instruments substitutes use 8-VSONP (5x6) packaging. While all are 8-pin surface mount configurations with similar overall dimensions, thermal pad placement and pin assignment may differ. PCB layout verification, including thermal pad connectivity and trace routing, is required before design implementation.

Q: Which substitute offers the best thermal performance?

A: The BSC030N03MSGATMA1 provides the highest power dissipation capability at Tc (69W), compared to the FDMS8025S (50W). The BSC0902NSATMA1 and BSC0902NSIATMA1 both provide 48W at Tc. Texas Instruments parts specify power dissipation at Ta only (3.0W to 3.2W). Thermal performance depends on PCB design, copper area, and thermal management implementation.

Q: Can I use multiple substitute parts interchangeably in the same design?

A: No. While all listed parts meet the primary electrical specifications, differences in gate charge, input capacitance, on-resistance, and package configuration require individual circuit validation. Gate driver circuits, PCB layout, and thermal management must be verified for each specific part selection. Mixing different part numbers in production is not recommended without comprehensive design review and testing.

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