FDMS8023S N-Channel 30V 26A/49A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS8023S is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 26A at Ta and 49A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® and SyncFET™ series. The part is currently in Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters while maintaining compatibility with the 8-PowerTDFN package class and surface mount assembly requirements. Substitutes are necessary when the primary part is unavailable, when alternative sourcing is required, or when design flexibility permits selection from multiple qualified manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	26	A
Continuous Drain Current @ 25°C (Tc)	49	A
On-Resistance (Rds On Max) @ 26A, 10V	2.4	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1mA	3	V
Gate Charge (Qg Max) @ 10V	57	nC
Input Capacitance (Ciss Max) @ 15V	3550	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	59	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PQFN (5x6)	Surface Mount
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution logic for the FDMS8023S is based on the following criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must meet or exceed 26A at Ta and 49A at Tc
On-Resistance (Rds On): Must not exceed 2.4 mOhm at specified test conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V gate drive
Operating Temperature Range: Must support -55°C to 150°C
Package Class: Must be 8-PowerTDFN or equivalent surface mount 8-pin configuration
Compliance: RoHS3 compliant, MSL 1 rating

Substitute Categories:

Parametric Equivalent (FDMS0306AS): Identical electrical specifications and package, same manufacturer series, direct pin-compatible replacement.
Direct Manufacturer Substitutes (BSC025N03LSGATMA1): Meets or exceeds all electrical parameters with different package variant (PG-TDSON-8-5), same voltage and current class, higher thermal performance available.
Similar Performance Alternatives (BSZ0901NSATMA1, CSD17576Q5B, CSD17576Q5BT, RJK0346DPA-01#J0B, RS1E280BNTB, RS1E280GNTB): Meet core voltage and current requirements with variations in on-resistance, gate charge, and thermal characteristics. Package variants differ but remain within 8-pin surface mount class.

All substitutes maintain N-Channel MOSFET technology, 30V Vdss rating, and surface mount assembly compatibility.

Parameter Comparison

Parameter	FDMS8023S	FDMS0306AS	BSC025N03LSGATMA1	BSZ0901NSATMA1	CSD17576Q5B	RJK0346DPA-01#J0B	RS1E280BNTB	RS1E280GNTB
Manufacturer	onsemi	onsemi	Infineon	Infineon	Texas Instruments	Renesas	Rohm	Rohm
Vdss (V)	30	30	30	30	30	30	30	30
Id @ Ta (A)	26	26	25	22	100	65	28	28
Id @ Tc (A)	49	49	100	40	100	-	80	80
Rds On Max (mOhm)	2.4	2.4	2.5	2.0	2.0	1.8	2.3	2.6
Vgs(th) Max (V)	3.0	3.0	2.2	2.2	1.8	-	2.5	2.5
Qg Max (nC)	57	57	74	45	68	49	94	36
Ciss Max (pF)	3550	3550	6100	2850	4430	7650	5100	2300
Power Dissipation Ta (W)	2.5	2.5	2.5	2.1	3.1	-	3.0	3.0
Power Dissipation Tc (W)	59	59	83	50	125	65	30	31
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PQFN (5x6)	8-PQFN (5x6)	PG-TDSON-8-5	PG-TSDSON-8	8-VSONP (5x6)	8-WPAK	8-HSOP	8-HSOP
Product Status	Active	Active	Not For New Designs	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL Rating	1	1	1	1	1	1	1	1

Engineering Selection Recommendations

Recommended Primary Substitute:

FDMS0306AS (onsemi) is the recommended direct replacement for FDMS8023S. This part is a parametric equivalent with identical electrical specifications, same package configuration (8-PQFN 5x6), and belongs to the same PowerTrench® and SyncFET™ series. Both parts are Active status products with full RoHS3 compliance and MSL 1 rating. FDMS0306AS offers higher inventory availability (19,361 pcs vs. 4,522 pcs) and requires no circuit redesign.

Alternative Substitutes by Application Requirement:

For applications requiring higher continuous current capability:

CSD17576Q5B or CSD17576Q5BT (Texas Instruments NexFET™ series): Rated for 100A continuous drain current at Ta, providing significant current margin. Active product status. Suitable for high-current switching applications where thermal management is optimized.

For applications with space constraints or lower gate charge requirements:

BSZ0901NSATMA1 (Infineon OptiMOS™): Rated for 22A at Ta with lower gate charge (45 nC), reducing driver power dissipation. Active product status. Suitable for battery-powered or low-power gate drive circuits.

For applications requiring lower on-resistance:

RJK0346DPA-01#J0B (Renesas): Rated for 65A at Ta with 1.8 mOhm on-resistance, providing superior conduction efficiency. Active product status. Suitable for high-efficiency power conversion applications.

For applications with standard packaging preference:

RS1E280BNTB or RS1E280GNTB (Rohm Semiconductor): Rated for 28A at Ta in 8-HSOP package. Both Active status. RS1E280GNTB offers lower gate charge (36 nC) and reduced input capacitance (2,300 pF), beneficial for high-frequency switching.

Parts to avoid for new designs:

BSC025N03LSGATMA1 (Infineon): Product status is "Not For New Designs." This part is suitable only for legacy system maintenance or replacement applications where the original part specification must be maintained.

All recommended substitutes maintain full RoHS3 compliance, MSL 1 rating, and -55°C to 150°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can FDMS0306AS be used as a direct drop-in replacement for FDMS8023S?

A: Yes. FDMS0306AS is a parametric equivalent with identical electrical specifications, same 8-PQFN (5x6) package, and compatible pin configuration. No circuit modifications are required. Both parts are from onsemi's PowerTrench® and SyncFET™ series with Active product status.

Q: What is the difference between the FDMS8023S and CSD17576Q5B?

A: Both parts share the same 30V Vdss rating and -55°C to 150°C operating range. CSD17576Q5B offers significantly higher continuous drain current (100A at Ta vs. 26A) and lower on-resistance (2.0 mOhm vs. 2.4 mOhm), making it suitable for higher-current applications. However, CSD17576Q5B uses a different package (8-VSONP) and has higher input capacitance (4,430 pF vs. 3,550 pF), which may affect gate drive requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the FDMS8023S environmental and regulatory requirements.

Q: Which substitute has the lowest on-resistance?

A: RJK0346DPA-01#J0B (Renesas) has the lowest on-resistance at 1.8 mOhm at 25A and 10V gate voltage. This part is suitable for applications where conduction losses must be minimized. However, it uses an 8-WPAK package variant and is rated for 65A continuous current.

Q: Can I use BSC025N03LSGATMA1 in a new design?

A: No. BSC025N03LSGATMA1 is marked "Not For New Designs" by Infineon. This part is restricted to legacy system support and replacement applications only. Use FDMS0306AS, CSD17576Q5B, or other Active-status alternatives for new designs.

Q: What is the difference between RS1E280BNTB and RS1E280GNTB?

A: Both parts are Rohm Semiconductor N-Channel MOSFETs rated for 30V and 28A at Ta. RS1E280GNTB has significantly lower gate charge (36 nC vs. 94 nC) and reduced input capacitance (2,300 pF vs. 5,100 pF), resulting in lower gate drive power dissipation and faster switching. RS1E280BNTB uses Cut Tape packaging while RS1E280GNTB uses Tape & Reel. Both are Active status products.

Q: Do all substitutes support the same gate voltage range?

A: All substitutes support ±20V maximum gate voltage, matching the FDMS8023S specification. However, gate threshold voltages vary: FDMS8023S and FDMS0306AS require 3V at 1mA, while Infineon and Texas Instruments parts specify 2.2V to 1.8V at 250µA. Lower threshold voltages allow operation with lower gate drive voltages but may require verification in existing gate drive circuits.

Q: Which substitute offers the best thermal performance?

A: CSD17576Q5B and CSD17576Q5BT (Texas Instruments) offer the highest power dissipation rating at Tc (125W), followed by BSC025N03LSGATMA1 (Infineon) at 83W. These parts are suitable for applications requiring maximum thermal headroom. FDMS8023S and FDMS0306AS are rated for 59W at Tc.

Q: Are package dimensions compatible across all substitutes?

A: No. While all substitutes are 8-pin surface mount devices in the 8-PowerTDFN package class, specific package variants differ: FDMS8023S uses 8-PQFN (5x6), BSC025N03LSGATMA1 uses PG-TDSON-8-5, BSZ0901NSATMA1 uses PG-TSDSON-8, CSD17576Q5B uses 8-VSONP (5x6), RJK0346DPA-01#J0B uses 8-WPAK, and Rohm parts use 8-HSOP. PCB layout and thermal management design may require adjustment for different package variants.

Q: What is the inventory status of substitute parts?

A: FDMS0306AS has the highest inventory (19,361 pcs), followed by BSZ0901NSATMA1 (44,700 pcs) and RS1E280BNTB (35,735 pcs). CSD17576Q5B has 9,580 pcs available. RJK0346DPA-01#J0B has 3,305 pcs. CSD17576Q5BT has the lowest inventory at 1,215 pcs. Inventory levels should be verified with suppliers for current availability.

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