FDMS7672AS N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS7672AS is an N-Channel 30V MOSFET manufactured by onsemi, designed for surface mount applications in the 8-PQFN (5x6) package. This device delivers 19A continuous drain current at 25°C (Ta) and 42A at case temperature (Tc), with a maximum on-resistance of 4mOhm at 18A and 10V gate-source voltage. The FDMS7672AS is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute devices must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating package variations in the 8-PowerTDFN family.

Substiute Parts

FDMS7672AS
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Key Parameters

Parameter Value Unit
Drain-Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 19 A
Continuous Drain Current @ Case Temp (Tc) 42 A
On-Resistance (Rds On Max) @ 18A, 10V 4 mOhm
Gate-Source Voltage (Vgs Max) ±20 V
Gate Threshold Voltage (Vgs(th)) @ 1mA 3 V
Gate Charge (Qg) @ 10V 46 nC
Input Capacitance (Ciss) @ 15V 2820 pF
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 46 W
Operating Temperature Range -55 to 150 °C
Package Type 8-PowerTDFN
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDMS7672AS is determined by strict alignment of electrical and mechanical parameters within the 8-PowerTDFN package family. The critical substitution criteria are:

Electrical Compatibility Requirements:

  • Drain-Source Voltage (Vdss) must equal 30V
  • Continuous Drain Current at 25°C (Ta) must be ≥19A
  • On-Resistance (Rds On) must not exceed 4mOhm at rated conditions
  • Gate-Source Voltage (Vgs Max) must support ±20V operation
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

  • Package classification must be 8-PowerTDFN
  • Surface mount mounting type
  • Pin configuration must support direct PCB layout compatibility

Compliance Requirements:

  • RoHS3 compliance mandatory
  • Moisture Sensitivity Level 1 (Unlimited) preferred for manufacturing flexibility

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary electrical specifications within tolerance) and Functional Alternatives (meeting minimum electrical requirements with potential performance enhancements in specific parameters such as gate charge or input capacitance).

Parameter Comparison

Parameter FDMS7672AS (Main) BSC042N03LSGATMA1 BSC042N03MSGATMA1 BSC050N03LSGATMA1 BSC0906NSATMA1 CSD17309Q3 CSD17310Q5A CSD17506Q5A CSD17510Q5A CSD17577Q5A
Manufacturer onsemi Infineon Infineon Infineon Infineon Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Vdss (V) 30 30 30 30 30 30 30 30 30 30
Id @ 25°C Ta (A) 19 20 17 18 18 20 21 20 60
Id @ Tc (A) 42 93 93 80 63 60 100 100 100 60
Rds On Max (mOhm) 4 4.2 4.2 5 4.5 5.4 5.1 4 5.2 4.2
Vgs(th) Max (V) 3 2.2 2 2.2 2 1.7 1.8 1.8 2.1 1.8
Qg @ 10V (nC) 46 42 55 35 13 10 11.6 11 8.3 35
Ciss @ 15V (pF) 2820 3500 4300 2800 870 1440 1560 1650 1250 2310
Power Dissipation Ta (W) 2.5 2.5 2.5 2.5 2.5 2.8 3.1 3.2 3 3
Power Dissipation Tc (W) 46 57 57 50 30 53
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Active Active Active Active Active Active Active Active Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

BSC050N03LSGATMA1 (Infineon OptiMOS™) is the recommended primary substitute. This device maintains 30V Vdss, delivers 18A continuous drain current at 25°C (within 5% of FDMS7672AS specification), and achieves 5mOhm on-resistance. The gate charge of 35nC is lower than the original 46nC, resulting in faster switching characteristics. Input capacitance of 2800pF closely matches the original 2820pF. Product status is Active with full RoHS3 compliance and MSL 1 rating. Thermal performance at case temperature (50W Tc) exceeds the original 46W, providing improved thermal margin.

BSC042N03LSGATMA1 (Infineon OptiMOS™) provides an alternative with 20A continuous drain current at 25°C, exceeding the original specification by 5%. On-resistance of 4.2mOhm is within acceptable tolerance. Gate charge of 42nC is lower than the original, supporting faster switching. This device is Active status with full compliance certifications.

Secondary Substitutes (Functional Alternatives):

CSD17577Q5A (Texas Instruments NexFET™) offers enhanced performance with 60A continuous drain current at 25°C and 4.2mOhm on-resistance. Gate charge of 35nC and input capacitance of 2310pF provide improved switching efficiency. Product status is Active with full RoHS3 compliance. This device is suitable for applications requiring higher current capacity within the same voltage class.

CSD17310Q5A (Texas Instruments NexFET™) delivers 21A continuous drain current at 25°C with 5.1mOhm on-resistance. Gate charge of 11.6nC is significantly lower, enabling faster switching transitions. Product status is Active with full compliance. This device is appropriate for high-frequency switching applications.

CSD17506Q5A (Texas Instruments NexFET™) provides 4mOhm on-resistance matching the original specification exactly, with gate charge of 11nC for enhanced switching performance. Product status is Active with full RoHS3 compliance.

Compliance and Availability:

All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing processes. All substitute devices are classified as Active products with current production status, ensuring long-term availability and supply chain stability. The FDMS7672AS obsolete status necessitates transition to one of these active alternatives for new designs and production continuity.

Frequently Asked Questions (FAQ)

Q: Can BSC050N03LSGATMA1 be used as a direct replacement for FDMS7672AS in existing PCB layouts?

A: Yes. Both devices are classified as 8-PowerTDFN package type with identical pin configurations and surface mount characteristics. PCB layout compatibility is maintained without modification. Electrical parameters are within acceptable substitution tolerance: 18A vs. 19A continuous drain current (5% variance), 5mOhm vs. 4mOhm on-resistance (within design margin for most applications), and identical 30V Vdss rating.

Q: What is the impact of lower gate charge in substitute devices like CSD17577Q5A?

A: Lower gate charge (35nC vs. 46nC in the original) reduces the charge required to switch the device on and off. This results in faster switching transitions, lower gate drive power consumption, and reduced electromagnetic interference. For applications with fixed gate drive circuits, this change is beneficial and requires no circuit modification. Gate drive voltage compatibility remains unchanged at ±20V maximum.

Q: Are there package differences between the FDMS7672AS and substitute parts?

A: All recommended substitutes use the 8-PowerTDFN package classification. However, specific package designations vary by manufacturer: onsemi uses 8-PQFN (5x6), Infineon uses PG-TDSON-8-5 or PG-TDSON-8-6, and Texas Instruments uses 8-VSON-CLIP or 8-VSONP (5x6). Despite these nomenclature differences, all devices are mechanically and electrically compatible within the 8-PowerTDFN family, with identical pin pitch and thermal pad dimensions suitable for direct PCB substitution.

Q: Which substitute is best for thermal-limited applications?

A: BSC050N03LSGATMA1 provides the highest thermal performance at case temperature (50W Tc vs. 46W for the original), offering improved thermal margin. CSD17577Q5A also delivers 53W Tc performance. Both devices are suitable for applications requiring maximum heat dissipation capability within the 30V, ~20A continuous current class.

Q: Do substitute devices require different gate drive voltage levels?

A: All recommended substitutes operate within the ±20V gate-source voltage specification of the original FDMS7672AS. Gate threshold voltages vary (ranging from 1.7V to 3V across substitutes), but this does not require gate drive circuit modification. Standard gate drive circuits designed for the original device will function correctly with all substitutes. Threshold voltage differences may result in slightly different switching timing, but this is within normal design tolerance for most applications.

Q: What is the significance of the Vgs(th) difference between FDMS7672AS (3V) and substitutes like CSD17309Q3 (1.7V)?

A: Gate threshold voltage (Vgs(th)) is the gate-source voltage at which the device begins to conduct at a specified drain current (typically 1mA). Lower threshold voltage in substitutes enables faster turn-on at lower gate drive voltages. This does not affect circuit compatibility, as standard gate drive circuits supply voltages well above the threshold of any substitute device. The difference may result in marginally faster switching transitions in substitutes with lower threshold voltages, which is generally advantageous for efficiency.

Q: Can CSD17506Q5A be used if only high current capacity is needed?

A: CSD17506Q5A is specified for 100A case temperature current with no Ta (25°C) rating provided in the data. This device is optimized for very high current applications and may be oversized for applications requiring only 19A continuous current. While electrically compatible at 30V Vdss and 4mOhm on-resistance, the higher input capacitance (1650pF) and gate charge (11nC) characteristics differ from the original. Use this device only if application requirements specifically demand 100A+ current capacity.

Q: Are all substitutes available in both tape-and-reel and cut-tape packaging?

A: Packaging availability varies by substitute. BSC050N03LSGATMA1 is available in Cut Tape (CT) & Digi-Reel®. BSC042N03MSGATMA1 is available in Tape & Reel (TR). CSD17577Q5A is available in Tape & Reel (TR), while CSD17577Q5AT is available in Cut Tape (CT) & Digi-Reel®. Verify packaging availability with your supplier for your specific procurement requirements.

Q: What is the REACH compliance status of substitute devices?

A: Most recommended substitutes (BSC050N03LSGATMA1, BSC042N03LSGATMA1, CSD17309Q3, CSD17577Q5A) are REACH Unaffected. CSD17510Q5A and CSD17577Q5AT are REACH Affected. All devices maintain RoHS3 compliance. For applications in REACH-regulated markets, verify the specific REACH status of your selected substitute with the manufacturer.

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