FDMS7670AS N-Channel 30V 22A/42A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS7670AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 22A at Ta (ambient temperature) and 42A at Tc (case temperature). This device features the PowerTrench® and SyncFET™ technology series and is packaged in an 8-PQFN (5x6) surface mount configuration. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, continuous drain current, on-resistance characteristics, and thermal performance specifications.

Substiute Parts

FDMS7670AS
onsemiIn Stock: 8048FDMS7670AS Datasheet
FDMS7670AS
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FDMC7660DC
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BSC030N03LSGATMA1
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BSC030N03MSGATMA1
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CSD17301Q5A
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CSD17305Q5A
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CSD17501Q5A
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CSD17581Q5A
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 22 A
Continuous Drain Current @ 25°C (Tc) 42 A
On-Resistance (Rds On Max) @ Id, Vgs 3 mOhm @ 21A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 3 V @ 1mA
Gate Charge (Qg Max) @ Vgs 66 nC @ 10V
Input Capacitance (Ciss Max) @ Vds 4225 pF @ 15V
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 65 W
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 8-PQFN (5x6) Surface Mount
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitute parts for the FDMS7670AS are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Critical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 30V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET Metal Oxide (exact match required)
  • Continuous Drain Current (Ta): minimum 22A
  • Continuous Drain Current (Tc): minimum 42A
  • On-Resistance (Rds On): compatible with 3 mOhm specification
  • Gate Threshold Voltage: compatible with 3V specification
  • Operating Temperature Range: -55°C to 150°C minimum
  • Mounting Type: Surface Mount (exact match required)
  • RoHS Status: ROHS3 Compliant (exact match required)
  • Moisture Sensitivity Level: 1 (Unlimited) (exact match required)

Substitute parts are grouped into two categories: direct equivalents from onsemi (same manufacturer, same series technology) and cross-manufacturer alternatives from Infineon Technologies, Texas Instruments, and Rohm Semiconductor that meet all electrical and thermal specifications.

Parameter Comparison

Parameter FDMS7670AS FDMC7660DC BSC030N03LSGATMA1 BSC030N03MSGATMA1 CSD17301Q5A CSD17305Q5A CSD17306Q5A CSD17501Q5A CSD17581Q5A RS1E240BNTB RS1E240GNTB
Manufacturer onsemi onsemi Infineon Infineon Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Rohm Rohm
Vdss (V) 30 30 30 30 30 30 30 30 30 30 30
Id @ Ta (A) 22 30 23 21 28 29 24 24 24 24
Id @ Tc (A) 42 40 100 100 100 100 100 100 123 40 72
Rds On Max (mOhm) 3.0 2.2 3.0 3.0 2.6 3.4 3.7 2.9 3.4 3.2 3.3
Vgs(th) Max (V) 3.0 2.5 2.2 2.0 1.55 1.6 1.6 1.8 1.7 2.5 2.5
Qg Max (nC) 66 76 55 73 25 18.3 15.3 17 54 70 23
Ciss Max (pF) 4225 5170 4300 5700 3480 2600 2170 2630 3640 3900 1500
Power Dissipation Ta (W) 2.5 3.0 2.5 2.5 3.2 3.1 3.2 3.2 3.1 3.0 3.0
Power Dissipation Tc (W) 65 78 69 69 83 30 27
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 155 -55 to 150 -55 to 150
Package 8-PQFN (5x6) Dual Cool™ 33 PG-TDSON-8-1 PG-TDSON-8-1 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-HSOP 8-HSOP
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active Active Active Active Active Active Active Active Active Active

Engineering Selection Recommendations

All substitute parts listed are ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited), matching the compliance profile of the FDMS7670AS. The following selection guidance is based on product status and availability:

Primary Recommendation - onsemi Series: FDMC7660DC represents the closest functional equivalent within the onsemi product family. This part maintains the PowerTrench® series technology, shares the same 30V Vdss rating, and exceeds the continuous drain current specification (30A Ta, 40A Tc versus 22A Ta, 42A Tc). The part is currently in active production status with 7,841 units in stock. Package differences (Dual Cool™ 33 versus 8-PQFN) require PCB layout verification.

Secondary Recommendations - Cross-Manufacturer Alternatives: All Texas Instruments NexFET™ series parts (CSD17301Q5A, CSD17305Q5A, CSD17306Q5A, CSD17501Q5A, CSD17581Q5A) meet or exceed electrical specifications and are in active production. These parts feature lower gate charge and input capacitance characteristics compared to the FDMS7670AS, which may improve switching performance in certain applications. Package compatibility (8-VSONP 5x6) requires PCB footprint verification.

Infineon OptiMOS™ series parts (BSC030N03LSGATMA1, BSC030N03MSGATMA1) provide equivalent electrical performance with active product status and high inventory availability. These parts feature lower on-resistance and reduced gate threshold voltage, which may require gate drive circuit evaluation.

Rohm Semiconductor RS1E240BNTB and RS1E240GNTB provide functional equivalence with 24A continuous drain current at Ta. RS1E240GNTB offers superior thermal performance (72A Tc) and significantly reduced input capacitance (1500 pF), making it suitable for high-frequency switching applications. Package type (8-HSOP) differs from the original and requires PCB layout assessment.

Frequently Asked Questions (FAQ)

Q: Can I directly replace FDMS7670AS with FDMC7660DC without PCB modifications?

A: No. While both parts are onsemi products with identical electrical specifications (30V Vdss, compatible current ratings), the package types differ. FDMS7670AS uses 8-PQFN (5x6) while FDMC7660DC uses Dual Cool™ 33. PCB footprint, thermal pad design, and lead frame geometry differ. Layout verification and potential PCB redesign are required.

Q: What are the key differences between onsemi and Texas Instruments substitute options?

A: onsemi FDMC7660DC maintains the same gate threshold voltage (2.5V) and similar gate charge (76 nC) as the original. Texas Instruments NexFET™ parts feature significantly lower gate threshold voltage (1.55V to 1.8V) and reduced gate charge (15.3 to 25 nC), resulting in faster switching and lower gate drive power requirements. Gate drive circuit compatibility must be evaluated for TI alternatives.

Q: Are all substitute parts suitable for high-temperature applications?

A: All listed substitutes support the -55°C to 150°C operating temperature range of the FDMS7670AS. CSD17581Q5A extends to 155°C. Thermal performance varies by package type and case temperature rating. Verify thermal management design for applications operating near maximum junction temperature limits.

Q: How do package differences affect thermal performance?

A: Package type directly impacts thermal dissipation. The original 8-PQFN (5x6) provides baseline thermal performance (65W Tc). FDMC7660DC (Dual Cool™ 33) achieves 78W Tc through enhanced thermal interface design. Texas Instruments 8-VSONP packages provide comparable thermal performance. Rohm 8-HSOP packages show reduced Tc ratings (27-30W), indicating lower thermal dissipation capability. Thermal simulation is required for applications with high power dissipation requirements.

Q: Which substitute offers the best on-resistance performance?

A: FDMC7660DC provides the lowest on-resistance specification at 2.2 mOhm @ 22A, 10V, compared to 3.0 mOhm for the FDMS7670AS. CSD17501Q5A achieves 2.9 mOhm @ 25A, 10V. Lower on-resistance reduces conduction losses and heat generation, improving overall circuit efficiency. On-resistance specifications are measured at different current and voltage conditions; direct comparison requires normalization to identical test conditions.

Q: Are there inventory or lead time considerations for substitute selection?

A: All listed substitutes are in active production with substantial inventory availability. FDMC7660DC (7,841 units), CSD17501Q5A (30,400 units), and RS1E240GNTB (15,933 units) show highest stock levels. The original FDMS7670AS, listed as obsolete, has 8,005 units remaining in inventory. For long-term design continuity, selection of active production parts is recommended.

Q: Do gate charge differences affect circuit design?

A: Yes. The FDMS7670AS specifies 66 nC gate charge @ 10V. Texas Instruments alternatives range from 15.3 to 25 nC, while Rohm RS1E240GNTB provides 23 nC. Lower gate charge reduces gate drive power dissipation and enables faster switching transitions. Gate drive circuits designed for the original 66 nC specification will function with lower gate charge parts but may exhibit faster switching transients, potentially requiring EMI filtering adjustments.

Q: Which substitute is recommended for new designs?

A: For new designs, CSD17306Q5A (Texas Instruments NexFET™) or RS1E240GNTB (Rohm) are recommended. Both are in active production, offer superior electrical characteristics (lower gate charge, reduced on-resistance), and provide long-term availability. CSD17306Q5A matches the original 24A Ta specification closely and provides 100A Tc capability. RS1E240GNTB offers exceptional input capacitance reduction (1500 pF) for high-frequency applications. Package compatibility with existing PCB designs must be verified independently.

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