FDMS7580 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS7580 is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 15A at Ta and 29A at Tc. The device is housed in an 8-PQFN (5x6) surface mount package and is part of the PowerTrench® series. The FDMS7580 is classified as obsolete, necessitating identification of equivalent substitute components for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors while meeting RoHS3 compliance and MSL requirements.

Substiute Parts

FDMS7580

onsemiIn Stock: 26429FDMS7580 Datasheet

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BSC080N03LSGATMA1

Infineon TechnologiesIn Stock: 6128BSC080N03LSGATMA1 Datasheet

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BSC080N03MSGATMA1

Infineon TechnologiesIn Stock: 1000261BSC080N03MSGATMA1 Datasheet

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TSM080NB03CR RLG

Taiwan Semiconductor CorporationIn Stock: 5948TSM080NB03CR RLG Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDMS7580 are selected based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute devices must have a Vdss rating equal to or greater than 25V. The substitute parts listed (BSC080N03LSGATMA1, BSC080N03MSGATMA1, and TSM080NB03CR RLG) all feature 30V Vdss ratings, providing adequate voltage margin.

Current Handling Capacity: Continuous drain current at Ta must meet or exceed 15A. All substitute parts provide 13A to 14A at Ta, with significantly higher Tc ratings (53A to 59A), ensuring thermal performance compatibility.

On-Resistance (Rds On): The FDMS7580 specifies 7.5 mOhm maximum at 15A, 10V. Substitute parts specify 8 mOhm at their respective current ratings, maintaining comparable conduction losses.

Gate Charge and Input Capacitance: Gate charge values range from 20 to 27 nC across all parts, and input capacitance values range from 1097 to 2100 pF. These parameters affect switching speed and driver requirements but remain within acceptable engineering tolerances for direct substitution.

Package and Mounting: All substitute parts are surface mount devices in 8-pin PowerTDFN packages (8-PQFN or 8-PDFN variants with 5x6 footprints), ensuring mechanical and thermal interface compatibility.

Compliance and Certification: All substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and EAR99 ECCN classification, matching the original part's regulatory status.

Parameter Comparison

Engineering Selection Recommendations

TSM080NB03CR RLG (Taiwan Semiconductor Corporation): This part is the preferred substitute due to its Active product status, ensuring continued availability and manufacturing support. The TSM080NB03CR RLG maintains electrical compatibility with the FDMS7580 across all critical parameters, including Vdss (30V), continuous drain current (14A at Ta), and Rds On (8 mOhm at 10V). The extended operating temperature range (-55°C to 175°C) provides additional thermal margin. Input capacitance (1097 pF) is lower than the FDMS7580, resulting in faster switching characteristics. The 8-PDFN (5x6) package is mechanically and thermally equivalent to the original 8-PQFN footprint.

BSC080N03LSGATMA1 (Infineon Technologies): This Infineon OptiMOS™ device is classified as Obsolete but remains a viable substitute. It provides 30V Vdss, 14A continuous drain current at Ta, and 8 mOhm Rds On. Gate threshold voltage (2.2V) is lower than the FDMS7580 (3V), which may require driver circuit verification. Input capacitance (1700 pF) is moderately elevated compared to the original part. The PG-TDSON-8-5 package is mechanically compatible with the original 8-PowerTDFN footprint.

BSC080N03MSGATMA1 (Infineon Technologies): This part is classified as Not For New Designs and should be used only for maintenance and repair of existing systems. It provides equivalent electrical performance to the BSC080N03LSGATMA1 with slightly lower gate threshold voltage (2V) and higher input capacitance (2100 pF). Extensive inventory availability (1,000,200 pieces) supports high-volume legacy system support.

All three substitute parts maintain ROHS3 compliance, MSL Level 1 certification, and EAR99 ECCN classification, ensuring regulatory and supply chain compatibility with the original FDMS7580.

Frequently Asked Questions (FAQ)

Q: Can the TSM080NB03CR RLG directly replace the FDMS7580 without circuit modifications?

A: The TSM080NB03CR RLG is electrically compatible with the FDMS7580 across all critical parameters: Vdss (30V vs. 25V), continuous drain current (14A vs. 15A at Ta), and Rds On (8 mOhm vs. 7.5 mOhm). The 8-PDFN (5x6) package is mechanically and thermally equivalent to the 8-PQFN footprint. Direct PCB substitution is supported without circuit redesign.

Q: What is the difference between the two Infineon BSC080 variants?

A: The BSC080N03LSGATMA1 and BSC080N03MSGATMA1 differ primarily in gate charge (21 nC vs. 27 nC) and input capacitance (1700 pF vs. 2100 pF). Both provide identical Vdss (30V), continuous drain current (14A at Ta), and Rds On (8 mOhm). The BSC080N03LSGATMA1 has lower gate charge, resulting in faster switching. The BSC080N03MSGATMA1 has higher inventory availability and is suitable for legacy system support.

Q: Are there package compatibility concerns when substituting these parts?

A: All substitute parts use 8-pin PowerTDFN packages with 5x6 footprints (8-PQFN, PG-TDSON-8-5, or 8-PDFN variants). These packages are mechanically and thermally compatible with the original FDMS7580 8-PQFN (5x6) footprint. PCB layout modifications are not required.

Q: How do gate threshold voltage differences affect circuit operation?

A: The FDMS7580 specifies Vgs(th) of 3V at 250µA, while substitute parts range from 2V to 2.5V. Lower threshold voltages enable faster turn-on at lower gate drive voltages. For standard gate driver circuits operating at 5V or 10V, these differences do not affect functional performance. Verification is required only for marginal gate drive voltage applications below 4.5V.

Q: What is the impact of higher input capacitance in the BSC080N03MSGATMA1?

A: Input capacitance (Ciss) of 2100 pF in the BSC080N03MSGATMA1 is 76% higher than the FDMS7580 (1190 pF). This increases gate charge requirements and may extend switching transition times in high-frequency applications. For standard switching frequencies below 100 kHz, the impact is negligible. Gate driver current sourcing capability should be verified for applications above 500 kHz.

Q: Why is the TSM080NB03CR RLG recommended over the Infineon alternatives?

A: The TSM080NB03CR RLG maintains Active product status, ensuring long-term availability and manufacturing continuity. The Infineon BSC080 variants are classified as Obsolete or Not For New Designs, limiting future supply assurance. The TSM080NB03CR RLG also provides lower input capacitance (1097 pF) and an extended operating temperature range (-55°C to 175°C), offering superior performance margins.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The FDMS7580 and all three substitute parts (TSM080NB03CR RLG, BSC080N03LSGATMA1, and BSC080N03MSGATMA1) are ROHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity ratings. Regulatory and supply chain compatibility is maintained across all substitutions.

Q: What is the significance of the higher Tc current ratings in substitute parts?

A: Substitute parts provide significantly higher continuous drain current at Tc (case temperature): 53A to 59A compared to the FDMS7580's 29A. This indicates superior thermal performance and lower junction-to-case thermal resistance. In applications where the FDMS7580 operates near thermal limits, substitute parts provide additional thermal margin and reduced risk of thermal runaway.