FDMS7578 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS7578 is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 17A at Ta and 28A at Tc. This device is packaged in an 8-PQFN (5x6) surface mount configuration and is part of the PowerTrench® series. The FDMS7578 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and gate drive requirements while accommodating available packaging options.

Substiute Parts

FDMS7578

onsemiIn Stock: 15386FDMS7578 Datasheet

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BSC050NE2LSATMA1

Infineon TechnologiesIn Stock: 15379BSC050NE2LSATMA1 Datasheet

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BSC057N03LSGATMA1

Infineon TechnologiesIn Stock: 1000142BSC057N03LSGATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMS7578 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating equal to or greater than 25V to ensure safe operation within the original design envelope.

Current Handling: Substitute parts must support continuous drain current (Id) at both Ta and Tc conditions equal to or exceeding the FDMS7578 specification of 17A (Ta) and 28A (Tc).

On-Resistance (RDS(on)): The maximum on-resistance must not exceed the original specification of 5.8 mOhm at the specified gate voltage and current conditions to maintain thermal and efficiency performance.

Gate Drive Characteristics: Gate threshold voltage (Vgs(th)), gate charge (Qg), and input capacitance (Ciss) must be compatible with existing gate drive circuitry. Variations in these parameters affect switching speed and drive circuit design margins.

Thermal Performance: Power dissipation ratings at both Ta and Tc must support the thermal requirements of the application.

Package and Mounting: Surface mount compatibility and pin configuration must align with PCB layout and assembly processes.

Compliance and Status: All substitute parts must maintain RoHS3 compliance, MSL Level 1 rating, and REACH unaffected status to meet regulatory and supply chain requirements.

Parameter Comparison

Engineering Selection Recommendations

BSC050NE2LSATMA1 (Infineon OptiMOS™ Series)

The BSC050NE2LSATMA1 is an active product with identical 25V Vdss rating and exceeds the FDMS7578 current specifications (39A Ta, 58A Tc versus 17A Ta, 28A Tc). On-resistance is superior at 5 mOhm, and gate charge is significantly lower at 10.4 nC, reducing gate drive power requirements. Input capacitance is reduced to 760 pF, enabling faster switching transitions. This device maintains full RoHS3 compliance, MSL Level 1 rating, and REACH unaffected status. The active product status ensures long-term availability and supply chain stability. Package compatibility requires verification as the BSC050NE2LSATMA1 uses PG-TDSON-8-5 packaging versus the original 8-PowerTDFN (5x6).

BSC057N03LSGATMA1 (Infineon OptiMOS™ Series)

The BSC057N03LSGATMA1 provides identical 17A Ta current rating with significantly higher Tc rating of 71A. The Vdss rating is elevated to 30V, providing additional voltage margin. On-resistance is comparable at 5.7 mOhm. Gate charge is slightly elevated at 30 nC, and input capacitance is higher at 2400 pF, which may require gate drive circuit evaluation. Power dissipation at Tc is higher at 45W. This device is classified as obsolete, limiting long-term availability. RoHS3 compliance, MSL Level 1 rating, and REACH unaffected status are maintained. Package compatibility requires verification as the BSC057N03LSGATMA1 uses PG-TDSON-8-5 packaging.

Recommendation Priority

For new designs and production continuity, BSC050NE2LSATMA1 is the preferred substitute due to active product status, superior electrical performance, and reduced gate drive requirements. BSC057N03LSGATMA1 is suitable for applications requiring higher voltage margin or thermal headroom but should be evaluated for long-term availability due to obsolete status.

Frequently Asked Questions (FAQ)

Q: Can the BSC050NE2LSATMA1 directly replace the FDMS7578 in existing designs?

A: Electrical substitution is valid based on voltage rating, current handling, and on-resistance specifications. However, package compatibility must be verified. The BSC050NE2LSATMA1 uses PG-TDSON-8-5 packaging while the FDMS7578 uses 8-PowerTDFN (5x6). PCB layout modifications may be required. Gate drive circuit evaluation is recommended due to lower gate charge (10.4 nC versus 25 nC) and reduced input capacitance (760 pF versus 1625 pF).

Q: What are the key differences in gate drive characteristics between these devices?

A: The BSC050NE2LSATMA1 has significantly lower gate charge (10.4 nC) and input capacitance (760 pF) compared to the FDMS7578 (25 nC and 1625 pF). This results in faster switching transitions and reduced gate drive power dissipation. The BSC057N03LSGATMA1 has higher gate charge (30 nC) and input capacitance (2400 pF), requiring more robust gate drive circuitry. Gate threshold voltages differ (2V, 2.2V, and 3V respectively), affecting minimum gate drive voltage requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both BSC050NE2LSATMA1 and BSC057N03LSGATMA1 are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating and REACH unaffected status, matching the FDMS7578 compliance profile.

Q: Why is the BSC050NE2LSATMA1 rated for higher current than the FDMS7578?

A: The BSC050NE2LSATMA1 is a higher-performance device within the OptiMOS™ series with improved die design and thermal characteristics. Higher current ratings (39A Ta, 58A Tc) do not preclude use in applications requiring lower current. The device operates within safe margins when used at or below the FDMS7578 current specifications.

Q: What is the impact of different package types on PCB design?

A: The FDMS7578 uses 8-PowerTDFN (5x6) while both Infineon substitutes use PG-TDSON-8-5 packaging. Although both are 8-pin surface mount packages, physical dimensions, pin pitch, and thermal pad configuration differ. PCB footprint redesign is required. Thermal performance may differ due to variations in thermal pad design and substrate material.

Q: Can the BSC057N03LSGATMA1 be used if higher voltage rating is needed?

A: Yes. The BSC057N03LSGATMA1 provides 30V Vdss rating versus 25V for the FDMS7578, offering additional voltage margin. However, this device is classified as obsolete, which may limit long-term availability and future sourcing. For applications requiring voltage headroom, the BSC050NE2LSATMA1 at 25V Vdss with active product status is the preferred choice.

Q: How do on-resistance specifications affect thermal performance?

A: On-resistance directly determines conduction losses (I²R). The FDMS7578 has 5.8 mOhm, BSC050NE2LSATMA1 has 5 mOhm, and BSC057N03LSGATMA1 has 5.7 mOhm. Lower on-resistance reduces heat generation. At identical current levels, the BSC050NE2LSATMA1 produces approximately 14% less conduction loss than the FDMS7578, improving thermal efficiency and potentially reducing heatsinking requirements.