FDMS7572S N-Channel MOSFET 25V 23A/49A Equivalent & Substitute Parts

Part Overview

The FDMS7572S is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 23A at Ta and 49A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and features PowerTrench® and SyncFET™ technology. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with acceptable parameter variations within the same device category.

Substiute Parts

FDMS7572S

onsemiIn Stock: 17372FDMS7572S Datasheet

Current PartRFQ

FDMS7572S

Fairchild SemiconductorIn Stock: 17434FDMS7572S Datasheet

Parametric EquivalentRFQ

BSZ036NE2LSATMA1

Infineon TechnologiesIn Stock: 5776BSZ036NE2LSATMA1 Datasheet

SimilarRFQ

CSD16407Q5

Texas InstrumentsIn Stock: 4625CSD16407Q5 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMS7572S is determined by alignment across the following critical parameters: FET type (N-Channel), drain-to-source voltage rating (25V), continuous drain current capability, on-resistance characteristics, gate charge, input capacitance, operating temperature range, surface mount package compatibility, and regulatory compliance status (RoHS3, REACH Unaffected).

The substitute parts identified fall into two categories:

Parametric Equivalent: FDMS7572S (Fairchild Semiconductor) maintains identical electrical specifications and package designation, differing only in manufacturer and product status (Active vs. Obsolete).

Similar Substitutes: BSZ036NE2LSATMA1 (Infineon Technologies) and CSD16407Q5 (Texas Instruments) provide functional alternatives with variations in continuous drain current, on-resistance, gate charge, and input capacitance. These parts share the same voltage rating, temperature range, package family, and regulatory compliance, but exhibit different performance characteristics suitable for specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

FDMS7572S (Fairchild Semiconductor) is the direct parametric equivalent and primary replacement for the obsolete onsemi FDMS7572S. This part maintains identical electrical specifications, package configuration, and operating characteristics. The Fairchild variant carries Active product status, ensuring long-term availability and supply chain continuity. Both parts are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements.

BSZ036NE2LSATMA1 (Infineon Technologies) serves as a functional substitute for applications where reduced continuous drain current (16A Ta / 40A Tc) is acceptable. This part exhibits lower gate charge (16 nC) and input capacitance (1200 pF), resulting in faster switching characteristics and reduced driver requirements. The higher on-resistance (3.6 mOhm) and lower power dissipation (2.1W Ta / 37W Tc) make this part suitable for lower-current or thermally constrained designs. Product status is Active with ROHS3 compliance.

CSD16407Q5 (Texas Instruments) provides a substitute option for applications requiring higher continuous drain current (31A Ta / 100A Tc) and superior on-resistance performance (2.4 mOhm). This part features the lowest gate charge (18 nC) and comparable input capacitance, enabling efficient high-frequency switching. The higher power dissipation rating (3.1W Ta) reflects increased current handling capability. Product status is Active with ROHS3 compliance. Gate voltage rating differs slightly (+16V / -12V vs. ±20V).

Selection between these alternatives depends on application-specific requirements for current handling, switching speed, thermal management, and gate drive characteristics. All substitute parts maintain the 25V voltage rating, surface mount 8-PowerTDFN package family, and -55°C to 150°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can the FDMS7572S (Fairchild) be used as a direct replacement for the onsemi FDMS7572S?

A: Yes. The Fairchild FDMS7572S is a parametric equivalent with identical electrical specifications, on-resistance, gate charge, input capacitance, and package configuration. The only differences are manufacturer and product status (Active vs. Obsolete). No circuit modifications are required.

Q: What are the key differences between the onsemi FDMS7572S and the Infineon BSZ036NE2LSATMA1?

A: The BSZ036NE2LSATMA1 has lower continuous drain current (16A Ta vs. 23A Ta), higher on-resistance (3.6 mOhm vs. 2.9 mOhm), significantly lower gate charge (16 nC vs. 45 nC), and reduced input capacitance (1200 pF vs. 2780 pF). These characteristics make it suitable for lower-current applications with faster switching requirements but unsuitable for designs requiring the full 23A continuous current capability.

Q: When should the Texas Instruments CSD16407Q5 be selected over the onsemi FDMS7572S?

A: The CSD16407Q5 is appropriate for applications requiring higher continuous drain current (31A Ta / 100A Tc) and superior on-resistance performance (2.4 mOhm). Its lower gate charge (18 nC) and comparable input capacitance enable efficient high-frequency operation. Applications with higher current demands or stringent efficiency requirements benefit from this part's characteristics.

Q: Are all substitute parts compatible with the same PCB layout and footprint?

A: All identified parts use the 8-PowerTDFN package family. However, specific package designations vary: onsemi and Fairchild use 8-PQFN (5x6), Infineon uses PG-TSDSON-8-FL, and Texas Instruments uses 8-VSONP (5x6). While these packages share similar footprints and pin configurations, PCB layout verification is necessary to confirm mechanical and electrical compatibility before implementation.

Q: Do all substitute parts meet the same regulatory compliance standards?

A: All identified parts are ROHS3 compliant and REACH unaffected. The onsemi FDMS7572S and Fairchild FDMS7572S explicitly state ROHS3 compliance. The Infineon BSZ036NE2LSATMA1 and Texas Instruments CSD16407Q5 also carry ROHS3 compliance certification. All parts carry EAR99 ECCN classification.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge directly affects gate drive requirements and switching speed. The onsemi FDMS7572S requires 45 nC at 10V, while the Infineon part requires only 16 nC and the Texas Instruments part requires 18 nC at 4.5V. Lower gate charge reduces driver power dissipation and enables faster switching transitions. Circuit designs must verify that existing gate drive circuitry can accommodate these variations or be redesigned accordingly.

Q: Can the BSZ036NE2LSATMA1 be used in a design originally specified for the FDMS7572S?

A: Substitution is possible only if the application does not require the full 23A continuous drain current of the original part. The BSZ036NE2LSATMA1 is rated for 16A Ta, making it unsuitable for designs operating at or near the original 23A specification. Applications with actual current requirements below 16A can benefit from this part's improved switching characteristics and reduced gate charge.

Q: What packaging considerations apply when switching between these parts?

A: All parts are surface mount devices in the 8-PowerTDFN package family. Specific package variants (8-PQFN, PG-TSDSON-8-FL, 8-VSONP) have similar but not identical footprints. PCB design files, solder reflow profiles, and assembly procedures must be verified for compatibility with the selected substitute part before production implementation.