FDMS7570S N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS7570S is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 28A at Ta and 49A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® and SyncFET™ series. The FDMS7570S is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support, production continuity, and system maintenance applications.

Substiute Parts

FDMS7570S

onsemiIn Stock: 23451FDMS7570S Datasheet

Current PartRFQ

BSC026NE2LS5ATMA1

Infineon TechnologiesIn Stock: 4234BSC026NE2LS5ATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMS7570S is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating: The substitute must maintain the same 25V Vdss rating to ensure safe operation within the original circuit design envelope.

Drain Current Capability: The substitute must support equivalent or superior continuous drain current at both ambient (Ta) and case (Tc) temperatures. The FDMS7570S specifies 28A at Ta and 49A at Tc; substitutes must meet or exceed these values.

On-Resistance (RDS(on)): The substitute's maximum on-resistance must not significantly exceed the original specification to maintain thermal performance and power efficiency characteristics.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitutes with comparable or lower gate charge ensure compatible gate drive performance.

Package Compatibility: The substitute must be compatible with the 8-PQFN surface mount footprint or provide mechanical and electrical equivalence in alternative 8-pin power packages.

Compliance and Status: The substitute must maintain RoHS3 compliance and active or current product status to ensure long-term availability and supply chain reliability.

The BSC026NE2LS5ATMA1 from Infineon Technologies meets these substitution criteria.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The FDMS7570S is classified as obsolete, while the BSC026NE2LS5ATMA1 maintains active product status. Active status ensures continued manufacturing support, documented availability, and supply chain reliability for new designs and production continuity.

Compliance Alignment: Both devices maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, ensuring regulatory equivalence for industrial and commercial applications.

Electrical Performance: The BSC026NE2LS5ATMA1 provides superior continuous drain current at case temperature (82A versus 49A), offering enhanced thermal headroom. The substitute exhibits lower gate charge (16 nC versus 69 nC) and reduced input capacitance (1100 pF versus 4515 pF), resulting in faster switching characteristics and reduced gate driver power requirements.

On-Resistance Trade-off: The BSC026NE2LS5ATMA1 exhibits slightly higher on-resistance (2.6 mOhm at 30A versus 1.95 mOhm at 28A). This difference is within acceptable engineering tolerance for most applications and is offset by superior thermal performance at elevated case temperatures.

Package Consideration: Both devices employ 8-pin power packages (8-PQFN versus PG-TDSON-8-7) with compatible surface mount footprints. PCB layout verification is required to confirm mechanical fit and thermal pad alignment.

Gate Voltage Specification: The BSC026NE2LS5ATMA1 specifies ±16V maximum gate voltage compared to ±20V for the FDMS7570S. Gate drive circuits must operate within the ±16V envelope to ensure device compatibility.

Frequently Asked Questions (FAQ)

Q: Can the BSC026NE2LS5ATMA1 directly replace the FDMS7570S in existing designs?

A: Direct replacement requires verification of three factors: (1) PCB footprint compatibility between 8-PQFN (5x6) and PG-TDSON-8-7 packages, (2) gate drive circuit compliance with ±16V maximum gate voltage specification, and (3) thermal pad layout alignment for optimal heat dissipation. Electrical performance is compatible across all critical parameters.

Q: What is the significance of the lower gate charge in the BSC026NE2LS5ATMA1?

A: Lower gate charge (16 nC versus 69 nC) reduces the energy required to switch the device on and off, resulting in lower gate driver power consumption and faster switching transitions. This characteristic improves overall circuit efficiency and reduces electromagnetic interference in high-frequency switching applications.

Q: How does the higher drain current at case temperature affect thermal design?

A: The BSC026NE2LS5ATMA1 supports 82A at Tc compared to 49A for the FDMS7570S, providing 67% greater current capacity at elevated case temperatures. This enhanced thermal performance allows operation at higher current levels or reduces thermal stress at equivalent current levels, extending device lifetime and improving reliability margins.

Q: Are there package footprint compatibility concerns?

A: Both devices use 8-pin surface mount power packages with similar pin configurations. However, the 8-PQFN (5x6) and PG-TDSON-8-7 packages have different physical dimensions and thermal pad geometries. PCB layout review is necessary to confirm mechanical fit and verify thermal pad connectivity before implementation.

Q: What compliance certifications apply to both devices?

A: Both the FDMS7570S and BSC026NE2LS5ATMA1 maintain ROHS3 compliance, MSL Level 1 (Unlimited moisture sensitivity), and REACH Unaffected status. Both devices carry EAR99 export classification and HTSUS code 8541.29.0095, ensuring regulatory equivalence for industrial applications.

Q: Why is the on-resistance specification measured at different current levels?

A: The FDMS7570S specifies RDS(on) at 28A while the BSC026NE2LS5ATMA1 specifies it at 30A. This reflects manufacturer test conditions and does not indicate incompatibility. The 2.6 mOhm specification at 30A for the substitute is comparable to the 1.95 mOhm specification at 28A for the original, with the difference attributable to measurement conditions and device technology variations.

Q: What is the impact of reduced input capacitance on circuit design?

A: The BSC026NE2LS5ATMA1 exhibits significantly lower input capacitance (1100 pF versus 4515 pF). Lower input capacitance reduces gate charge requirements, improves switching speed, and decreases gate driver stress. This characteristic is beneficial for high-frequency switching applications and reduces power dissipation in the gate drive circuit.